• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.224-227
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• 2015

In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.3
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• pp.190-196
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• 2002

Ni/MH 박막전지의 전극으로 사용될 수 $Mg_{2}Ni$박막을 스퍼터링방법으로 제조하였다. $Mg_{2}Ni$합금박막은 Mg, Ni타?을 이용하여 동시에 스퍼터링함으로서 제조하였다. KOH 액체전해질 및 $Ni(OH)_2$전극을 이용하여 전기화학실험을 하였다. $Mg_2Ni$ 박막의 초기 싸이클 특성에 미치는 열처리 효과를 조사하기 위하여, $200-550^{\circ}C$로 변화시키면서 진공중에서 열처리를 하였다. 열처리온도가 $300^{\circ}C$ 이하에서는 초기방전용량이 증가하였으며, $400^{\circ}C$ 열처리시에는 활성화시의 방전용량이 약 160mAh/g으로 가장 크게 나타났다.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.265-269
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• 2006

We have deposited NiO films by RF sputtering on $Al_2O_3/SiO_2/Si$ and 100 nm-thick Gd doped $CeO_2$ covered $Al_2O_3/SiO_2/Si$ substrates at various $Ar/O_2$ ratios. The deposited films were reduced to form porous Ni thin fllms in 4% $H_2\;at\;400^{\circ}C$. For the films deposited in pure Ar, the reduction was retarded due to the thickness and the orientation of the NiO films. On the other hand, the films deposited in oxygen mixed ambient were reduced and formed porous Ni films after 20 min of reduction. We also investigated the possibility of using the films for the single chamber operation by studying the electrical property of the films in the fuel/air mixed environment. It is shown that the resistance of the Ni film increases quickly in the mixed gas environment and thus further improvements of Ni-base anodes are required for using them in the single chamber operation.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.201-206
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• 2001

The evolution of textures in Fe-Ni alloy thin films fabricated by PVD using a sputtering method was investigated with parameters such as deposition time and chemical composition. The textures of the as-deposited films were characterized by fibre-type. In Invar alloy(Fe-36.5 wt%Ni) thin film, the <110>//ND fibre texture as a starting component changed to the <210>//ND fibre texture with increasing deposition time. In Permalloy(Fe-81 wt%Ni) thin film, a mixture of the <221>//ND and <311>//ND fibres developed at the early stage of deposition, and then transformed to the <210>//ND fibre with increasing deposition time. These texture changes were discussed in terms of relationship with the microstructural evolution of the films.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.98-103
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• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.182-182
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• 1999

The chemisorption effect of CO on the Ni/Cu(001) surface was investigated using LEED(Low Energy Electron Diffraction) and EELS(Electron Energy Loss Spectrscopy0 under the UHV conditions. after mounting the Cu(001) single crystal in the UHV chamber (base pressure 1$\times$10-10Torr), a clean surface was obtained after a few cycles of repeated Ar+ ion sputtering and annealing at about 40$0^{\circ}C$. The epitaxial thin Ni films were formed on the Cu(001) by evaporation from 99.999% Ni block. The pseudomorphic growth and the orderness of the thin Ni films were monitored by c(2$^{\circ}C$2) LEED pattern. CO adlayers on Ni epitaxial thin films were prepared by dosing pure CO has through a leak valve. After CO adsorpton at room temperature, two pairs of peaks were observed by EELS, whose relative intensities are changed as the film thickness is varied and time is elapsed. These two pair of peaks are likely related to different bonding sites (-top and bridge sites) of C-Ni as well as C-O vibration. Experimental results and qualitative interpretation of the spectra wille be discussed. The possibility of using EELS in combination with probe species (CO) to investigate the nature of thin film growth is mentioned. We will report the experimental result of O2 dosage on Ni film and interaction of CO and O2.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.127-135
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• 1999

Nickel oxide films were prepard by using the electron beam evaporation technique. Coloring and bleaching experiments for cyclic durability were repeated in KOH electrolyte by cyclic voltammetry. Visible spectrophtometry was used to assess the stability of the transmittance in the degraded films. X-ray photoelectron spectroscopy results showed that the grain surface are oxygen-rich compared to the grain interiors in a NiO film. Open circuit memory of colored films is about 400hours in lN KOH. The rate of self discharge was evaluated by measuring the transmittance at 550nm of a fully oxidized NiO film. The rate of self discharge was increased polynomially with time and the film is nearly bleached after about 400hours. It was also found that the degraded film by repeated cycles in the KOH solution changed the grain shape of film surface The film prepared under a vacuum pressure of $3\times10^{-4}$ mbar was found to be rather stable when subjected to the repeated coloring and bleaching cycles in KOH electrolyte. Band theory applied to explain the electrochromic mechanism was discussed.

• Journal of Magnetics
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• v.5 no.1
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• pp.19-22
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• 2000

The effects of a hard-biased Held on the magnetic and magnetoresistive properties of a crossed spin-valve head are investigated by computer simulation with particular emphasis on the asymmetry of the output signal. The spin-valve considered in this work is NiMn (25 nm)/NiFe (2.5 m)/Cu (3 nm)/NiFe (5.5 m), with a length of 1500 m and a width of 600 nm. A simple model is used where each magnetic layer consists of a single domain, and the magnetoresistance is a function of the angle between the magnetization directions of the two magnetic layers. The ideal crossed spin-valve structure is not realized with the present model and magnetic parameters, but the deviation from ideality is decreased by the hard-biased field. This results in the improvement of the linearity of the output signal with the use of the bias field. The magnetoresistance ratio and magnetoresistive sensitivity, however are reduced. The magnetic properties including the magnetoresistance are found to be strongly affected by magnetostatic interactions, particularly the inter-layer magnetostatic field.