• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.123.2-123.2
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• 2017

Fe-Ni-Cu 합금 전주를 위하여 황화물 용액에의 상의 열역학적 안정도를 작성하고 전주 조건을 선정하였다. $Fe-Ni-Cu-S-H_2O$ 용액의 열역학적 상의 안정도를 전산모사하기 위한 프로그램은 C#으로 작성하였다. JANAF 자료를 근거한 적정 전주 조건은 $130mA/cm^2$, $50{\sim}55^{\circ}C$, pH 2.4 이었다. XRF을 이용한 Fe-Ni-Cu의 합금 도막의 평균 조성은 Fe-42Ni-1Cu [wt.%] 이었다, 전류밀도가 낮아질수록 Ni과 Cu량은 증가하였다. 구리 농도가 증가하면 표면조도는 60 nm로 변화하였다.

• Journal of the Korean institute of surface engineering
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• v.28 no.1
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• pp.3-13
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• 1995

Electroless Ni and Cu platings were conducted on $B_4C$ and SiC. In the electroless Ni plating, the deposition rate on $B_4C$ was higher than on SiC. However, the electroless Cu deposition occured with high deposition rate regardless of the carbide substrates used in this study. Uniformity of the deposits was better in the electroless Cu deposition than in the electroless Ni deposition. In the topographies of the electroless depositions, Ni deposits have grown as colony, whereas Cu deposits have grown as fine individual grains.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.208-217
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• 1990

Electroless Ni-Cu-P plating was performed was performed to investigate for plating and changes in microhardness and corrosion rate of of electroless deposits depending on heat treatment. The activation energy for $75~85^{\circ}C$ were calculated to be 66.7KJ/mole. Plating rate increased to 34% with addition of 200ppm of NaF and 0.8ppm of thiourea to the bath. The highest hardness value was obtained by heat treatment deposits layer at$ 400^{\circ}C$, 1 hour. The increase in hardness of deposits by heating was confirmed to be associated with crystallization of the amorphous deposits. Corrosion resistance of deposir layer, which had been heated up to $300^{\circ}C$, was found to be exellent when immersed in 1N-H2SO4 solution, Change of the corrosion resistance seems to have some important bearing on content of amorpous, Ni3P and Cu3P.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.264-268
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• 2015

Cu films were plated in an eco-friendly electroless bath (No-Formaldehyde) on Ni/screen printed Ag pattern/PET substrate. For electroless Cu plating, we used sodium-phosphinate ($NaH_2PO_2{\cdot}H_2O$) as reducing agent instead of Formaldehyde. All processes were carried out in electroless solution of pH 7 to minimize damage to the PET substrate. According to the increase of sodium-phosphinate, the deposition rate, the granule size, and rms roughness of the electroless Cu film increased and the Ni content also increased. The electroless Cu films plated using 0.280 M and 0.575 M solutions of sodium-phosphinate were made with Cu of 94 at.% and 82 at.%, respectively, with Ni and a small amount P. All electroless Cu plated films had typical FCC crystal structures, although the amount of co-deposited Ni changed according to the variation of the sodium-phosphinate contents. From these results, we concluded that a formation of higher purity Cu film without surface damage to the PET is possible by use of sodium-phosphinate at pH 7.

• Journal of the Korean institute of surface engineering
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• v.27 no.4
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• pp.223-233
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• 1994

It is well known that compositionally modulated Cu-Ni alloy can be produced by an electrochemical method in Ni sulfate solution containing trace amount of Cu. a mathematical model is presented to describe the current distribution and weight percent of Cu in Ni layer on the rotating disk electrode. The model includes convective-diffusion equation, the Laplace's equation and various overpotentials, and is solved numerically. The thickness of Cu layer is almost uniform whereas the thickness of Ni layer as well as the Ni/Cu weight ratio are increased approaching to the edge of the disk. These results agree well with the experimental values. The ohmic potential drop is suggested as a major cause of a nonuniformity in Ni layer. The optimum plating condition for the fabrication of susperlattice is proposed based on the results of this study.

• Journal of the Korean institute of surface engineering
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• v.9 no.3
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• pp.1-4
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• 1976

In order to get high wear-resistant gold alloy plating on electronic parts, on attempt has been made, in which Cu, Ni, and Zn EDTA salts were added in gold palting solution. The results obtained on the wear resistance are as follows: 1. The addition of 0.5g/ι or over Cu in plating solution, showed 1.5 times more wear resistance than in case of no addition. 2. The addition of 1.5g/ι or over Ni, showed 3.5 times more wear-resistance . 3. The addition of 1.5g/ι and 4.0g/ι Zn , showed 3.5 times and 6.8 times more wear resistance , respectively. 4. The addition of 1.5g/ι Ni and 1.0g/ι Zn simultaneously , showed about 10 times more wear resistance than in case of no addition.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.230-234
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• 2009

It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.434-435
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• 2009

The crystalline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more. high-efficiency and low cost endeavors many crystalline silicon solar cells. the fabrication processes of high-efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/Ag contact, however, this contact formation processed by expensive materials. Ni/Cu contact formation is good alternative. in this paper, according to temperature Ni silicide makes, produced Ni/Cu contact solar cell and measured conversion efficiency.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.230-232
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• 2006

Eutectic Au-20Sn solder has been widely used for optoelectronic packages because of fluxless soldering process and thus are particularly valuable for many applications such as biomedical, photonic, and MEMS devices that can not use any flux. Also when good joint strength, superior resistance to corrosion, whisker-free, and good thermal conductivity are demanded, eutectic Au-20Sn solder can be satisfied with above-mentions best. In this study, we tried to know the interfacial reactions between Au-20Sn solder and Cu substrate with or without ENIG plating layer In the results, Au-Cu-Sn ternary phases were formed at the Au-20Sn/Cu substrate, and Au-Ni-Sn, Au-Ni-Cu-Sn phases were formed at the Au-20Sn/ENIG substrate.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.54-61
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• 2016

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).