• Korean Journal of Materials Research
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• v.18 no.1
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• pp.5-11
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• 2008

Thermally evaporated 10 nm-Ni/1 nm-Au/(30 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Au-inserted nickel silicide. The silicide samples underwent rapid thermal annealing at $300{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance was measured using a four-point probe. A scanning electron microscope and a transmission electron microscope were used to determine the cross-sectional structure and surface image. High-resolution X-ray diffraction and a scanning probe microscope were employed for the phase and surface roughness. According to sheet resistance and XRD analyses, nickel silicide with Au had no effect on widening the NiSi stabilization temperature region. Au-inserted nickel silicide on a single crystal silicon substrate showed nano-dots due to the preferred growth and a self-arranged agglomerate nano phase due to agglomeration. It was possible to tune the characteristic size of the agglomerate phase with silicidation temperatures. The nano-thick Au-insertion was shown to lead to self-arranged microstructures of nickel silicide.

• Journal of the Korean Magnetics Society
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• v.18 no.3
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• pp.94-97
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• 2008

We investigated how the magnetic anisotropy in $[Co(2\;{\AA})/Ni(8\;{\AA})]{\times}N$ multilayers varied with the type and thickness of an underlayer. The magnetic measurements clearly showed that the perpendicular magnetic anisotropy could be developed in the Co/Ni multilayer by adopting an underlayer with [111] texture. The coercivity of the Co/Ni multilayer increased from 99 Oe to 430 Oe as the thickness of an Au underlayer increased from $50\;{\AA}$ to $500\;{\AA}$. The increase in coercivity is ascribed to the development of the stronger [111] texture in the Co/Ni multilayer as an Au underlayer gets thicker.

• Journal of Welding and Joining
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• v.35 no.2
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• pp.1-5
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• 2017

Many microelectronic devices are miniaturizing the capacitance density and the size of the capacitor. Along with this miniaturization of electronic circuits, tantalum (Ta) capacitors have been on the market due to its large demands worldwide and advantages such as high volumetric efficiency, low temperature coefficient of capacitance, high stability and reliability. During a tantalum capacitor manufacturing process, arc welding has been used to weld base frame and sub frame. This arc welding may have limitations since the downsizing of the weldment depends on the size of welding electrode and the contact time may prevent from improving productivity. Therefore, to solve these problems, this study applies laser spot welding to weld nickel (Ni) and Au-Sn-Ni alloy using CW IR fiber laser with lap joint geometry. All laser parameters are fixed and the only control variable is laser irradiance time. Four different shapes, such as no melting upper workpiece, asymmetric spherical-shaped weldment, symmetric weldment, and, excessive weldment, are observed. This shape may be due to different temperature distribution and flow pattern during the laser spot cutting.

• Journal of Magnetics
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• v.9 no.2
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• pp.40-46
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• 2004

The magnetic properties of sputtered ($Ni_{83}Fe_{17}/Au/Co/Au$) multilayers with various thicknesses of Au (0.5 {\leq} t_{Au} {\leq} 3 nm), Ni-Fe ($1{\leq}t_{Ni-Fe}{\leq}4nm$) and Co ($0.2{\leq}t_{co}{\leq}1.5nm$) layers were characterized. An alternating in-plane and out-of-plane anisotropy of the ferromagnetic layers was achieved for the structures ($t_{Au}{\geq}1.5nm$) showing a weak coupling between the Ni-Fe layers with an in-plane anisotropy and the Co layers ($0.3{\leq}t_Co{\leq}1.2nm$) with a perpendicular anisotropy. For such a structure, a detailed discussion on the GMR effect is presented, relating to the magnetization reversal from a mutually perpendicular magnetic configuration at the remanence to a parallel one at the saturation. An influence of the dense labyrinth domain structure on the magnetoresistance effect is also addressed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.204-209
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• 2017

We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.469-474
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• 2002

Laser and hot air reflow soldering of PBGA solder ball was investigated. Experimental results showed that surface quality and shear strength of solder bumps reflowed by laser was superior than the solder bumps reflowed by hot air, and the microstructure inside the solder bumps reflowed by laser was much finer. Analysis on interfacial reaction showed that eutectic solder reacted with Au/Ni/Cu pad shortly after the solder was melted. Interface of solder bump reflowed by laser consists of a continuous AuSn$_4$ layer and remnant Au element. Needle-like AuSn$_4$ grew sidewise from interface, and then spread out to the entire interface region. A thin layer of Ni$_3$Sn$_4$ intermetallic compound was found at the interface of solder bump reflowed by hot air, AuSn$_4$ particles distributed inside the whole solder bump randomly. It is the combination effect of the continuous AuSn$_4$ layer and finer eutectic microstructure inside the solder bump reflowed by laser that resulted in higher shear strength.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.261-265
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• 2011

This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to $800^{\circ}C$. At annealing temperature of $600^{\circ}C$, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of $800^{\circ}C$ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at $200^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.78-78
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• 1999

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.54-54
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• 2004