• Title/Summary/Keyword: Ni/Au

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Interfacial Reactions Between Au-20Sn Solder and Cu Substrate with or without ENIG plating layer (Eutectic Au-20Sn solder와 Cu/ENIG 기판과의 계면반응)

  • Jeon Hyeon-Seok;Yun Jeong-Won;Jeong Seung-Bu
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.230-232
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    • 2006
  • Eutectic Au-20Sn solder has been widely used for optoelectronic packages because of fluxless soldering process and thus are particularly valuable for many applications such as biomedical, photonic, and MEMS devices that can not use any flux. Also when good joint strength, superior resistance to corrosion, whisker-free, and good thermal conductivity are demanded, eutectic Au-20Sn solder can be satisfied with above-mentions best. In this study, we tried to know the interfacial reactions between Au-20Sn solder and Cu substrate with or without ENIG plating layer In the results, Au-Cu-Sn ternary phases were formed at the Au-20Sn/Cu substrate, and Au-Ni-Sn, Au-Ni-Cu-Sn phases were formed at the Au-20Sn/ENIG substrate.

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Direct Growth of Graphene on Insulating Substrate by Laminated (Au/Ni) Catalyst Layer

  • Ko, Yong Hun;Kim, Yooseok;Jung, Daesung;Park, Seung Ho;Kim, Ji Sun;Shim, Jini;Yun, Hyeju;Song, Wooseok;Park, Chong-Yun
    • Applied Science and Convergence Technology
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    • v.24 no.4
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    • pp.117-124
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    • 2015
  • A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ~80.6%.

Joining characteristics of Sn-3.5Ag solder bump by induction heating (유도가열에 의한 Sn-3.5Ag 솔더 범프의 접합 특성에 관한 기초연구)

  • Choe, Jun-Gi;Bang, Hui-Seon;Rajesh, S.R.;Bang, Han-Seo
    • Proceedings of the KWS Conference
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    • 2006.10a
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    • pp.181-183
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    • 2006
  • This paper studies the mechanical behaviors of Sn-3.5Ag solder joint against substrate(such as Au/Ni/Cu, Au/cu, Ni/Cu and Cu pad) after induction heating, a new soldering method. It was found that the solder bump formation depends on the time and current of the induction heating system. Also the heating value of the solder bump were found to vary with respect to the thermal conductivity of the pads on the substrate. In case of Au/Ni/Cu pad and Au/Cu pad, solder bump's shear strength were high for the heating time of $1.5{\sim}2sec$. For Ni/Cu pad, solder bump's shear strength were found to increase with time increment.

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Electronic structure of the Au intercalated monolayer graphene on Ni(111)

  • Hwang, H.N.;Jee, H.G.;Han, J.H.;Tai, W.S.;Kim, Y.D.;Hwang, C.C.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.342-342
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    • 2010
  • We have investigated an Au intercalated monolayer graphene on Ni(111) using angle-resolved photoemission spectroscopy (ARPES), high resolution photoemission spectroscopy (HRPES), and low energy electron diffraction (LEED) at the 3A2 ARUPS beamline in Pohang Accelerator Laboratory. We find the monolayer graphene is well grown on the Ni(111) surface by the adsorption of acetylene. However, the graphene does not show the characteristic $\pi$ band near the Fermi level due to its strong interaction with the underlying substrate. When Au is adsorbed on the surface and then annealed at high temperature, we observe that Au is intercalated underneath the monolayer graphene. The process of the Au intercalation was monitored by HRPES of corresponding Au 4f and C 1s core levels as well as the electronic structure of the $\sigma$, $\pi$ states at $\Gamma$, K points. The $\sigma$, $\pi$ bands of graphene shift towards the Fermi level and the $\pi$ band is clearly observed at K point after the intercalation of full monolayer Au. The full width at half maximum (FWHM) of the C 1s peak narrows to approximately 0.42 eV after intercalation. These results imply that the interaction between the graphene and substrate is considerably weakened after the Au intercalation. We will discuss the graphene is really closer to ideal free standing graphene suggested recently.

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Electrochemical Synthesis of Dumbbell-like Au-Ni-Au Nanorods and Their Surface Plasmon Resonance

  • Park, Yeon Ju;Liu, Lichun;Yoo, Sang-Hoon;Park, Sungho
    • Journal of Electrochemical Science and Technology
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    • v.3 no.2
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    • pp.57-62
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    • 2012
  • In this report, we demonstrate that the longitudinal localized surface plasmon resonance mode can be suppressed when the nanorods were in dumbbell shape. The seed nanorods were synthesized by electrochemical deposition of metals into the pores of anodic aluminum oxide templates. The dumbbell-like nanorods were grown from seed Au-Ni-Au nanorods by a rate-controlled seed-mediated growth strategy. The selective deposition of Au atoms onto Au blocks of Au-Ni-Au nanorods produced larger diameter of Au nanorods with bumpy surface resulting in dumbbell-like nanorods. The morphology of nanorods depended on the reduction rate of $AuCl_4^-$, slow rate producing smooth surface of Au nanorods, but high reduction rate producing bumpy surface morphology. Through systematic investigation into the UV-Vis-NIR spectroscopy, we found that the multiple localized surface plasmon resonance (LSPR) modes were available from single-component Au nanorods. And, their LSPR modes of Au NRs with bumpy surface, compared to the smooth seed Au NRs, were red-shifted, which was obviously attributed to the increased electron oscillation pathways. While the longitudinal LSPR modes of smoothly grown Au NRs were blue-shifted except for a dipole transverse LSPR mode, which can be interpreted by decreased aspect ratio. In addition, dumbbell-like nanorods showed an almost disappeared longitudinal LSPR mode. It reflects that the plasmonic properties can be engineered using complex nanorods structure.

The Resistive Switching Characteristics of Au-NiO-Au Segmented Nanowires Synthesized by Electrochemical Deposition

  • Lee, Sae-Eun;Kim, Dong-Uk;Yu, Bong-Yeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.29.1-29.1
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    • 2011
  • ReRAM은 metal-oxide-metal구조로 차세대 비활성 메모리를 대체하기 위하여 연구되어왔다. ReRAM은 낮은 전력 소모와 다른 두 저항상태 사이의 높은 scalability를 갖는 장점이 있지만 높은 reset전류와 일정하지 않은 저항 값을 갖고 있어 실용화에 어려움을 겪고 있다. 저항변화현상의 메커니즘은 일반적으로 일정 전압이 가해 졌을 때, MIM 구조의 산화물 내에서 필라멘트가 형성되었다 파괴되는 것으로 알려져 있다. 저항스위칭 메모리의 작동능력을 증진시키기 위해서는, oxide층의 두께조절, 산화층과 electrode 사이의 계면 특성 연구가 필요하다. 본 연구에서는, 전기화학증착법을 이용하여 Au-NiO-Au segmented 나노와이어 구조를 만들었다. 전기화학증착 방법을 이용하면 에칭 손상없이 간단하게 나노 구조체를 형성 할 수 있고, 나노 사이즈로 제작된 산화층이 전도성 필라멘트가 형성되는 영역을 제한하여 reset전류를 줄일 수 있는 장점이 있다. 또한 열처리 과정에서 Au가 NiO부분에 diffusion되는 현상을 이용하여 doping에 따른 switching 변화 특성도 관찰하였다.

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