• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.575-575
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• 2012

Synthesis of novel two dimensional materials has gained tremendous attention recently as they are considered as alternative materials for replacing graphene that suffers from a lack of bandgap, a property that is essential for many applications. Single layer molybdenum disulfide ($MoS_2$) has a direct bandgap (1.8eV) that is promising for use in next-generation optoelectronics and energy harvesting devices. We have successfully grown high quality single layer $MoS_2$ by a facile vapor-solid transport route. As-grown single layer $MoS_2$ was carefully characterized by using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy and electrical transport measurement. The results indicate that a high quality single layer $MoS_2$ can be successfully grown on silicon substrate. This may open up great opportunities for the exploration of novel nanoelectronic devices.

• 정보처리학회논문지:소프트웨어 및 데이터공학
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• 제4권7호
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• pp.277-282
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• 2015

건강정보의 교환, 통합, 공유, 검색의 표준을 개발하는 Health Level Seven(HL7)에서 발표된 표준들은 글로벌한 의료정보 서비스에 성공적으로 사용되고 있다. 그러나 V2.x Message와 V3 Clinical Document Architecture(CDA)는 습득하고 개발하는 데 많은 시간이 소요되는 문제점이 있다. 개선된 Fast Healthcare Interoperability Resources(FHIR)를 사용함으로써 이러한 문제점을 해결할 수 있는 방법인지 모색한다. 개인건강기록이 사회적인 관심을 끌고 있고, 스마트폰 보급률이 급격히 증가하는 점을 반영하여 스마트폰으로 접속 가능한 개인건강기록 프로파일링 시스템을 개발한다. Furore에서 개발한 FHIR Profile editor tools을 통해 profile의 생성, 변경의 개선점을 찾아본다. 이와 같은 시스템을 구축하기 위해서 Electronic Medical Record(EMR) 시스템과 Personal Healthcare Record(PHR) 시스템 간의 정보교류를 FHIR Open API로 구성한다. PHR 프로파일링 시스템에서는 이들 트랜잭션을 RESTful 서비스로 제공한다. 본 연구에서는 FHIR를 통해 PHR 프로파일링 시스템 개발의 효율성을 검증한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.375-375
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• 2014

Layered semiconductor materials can be a promising candidate for large-area thin film transistors (TFTs) due to their relatively high mobility, low-power switching, mechanically flexibility, optically transparency, and amenability to a low-cost, large-area growth technique like thermal chemical vapor deposition (CVD). Unlike 2D graphene, series of transition metal dichalcogenides (TMDCs), $MX_2$ (M=Ta, Mo, W, X=S, Se, Te), have a finite bandgap (1~2 eV), which makes them highly attractive for electronics switching devices. Recently, 2D $MoS_2$ materials can be expected as next generation high-mobility thin-film transistors for OLED and LCD backplane. In this paper, we investigate in detail the electrical characteristics of 2D layered $MoS_2$ local bottom-gated transistor with the same device structure of the conventional thin film transistor, and expect the feasibility of display application.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.784-787
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• 2002

Sol-gel 법으로 PLT(28) 박막을 제작하여, 박막의 구조적 및 전기적 특성을 조사하였다. XRD와 AFM 관찰결과, $650^{\circ}C$에서 annealing 된 박막은 완전한 perovskite 구조를 가지며 표면거칠기도 22$\AA$ 으로 양호한 값을 나타내었다. Pt/TiO$_{x}$SiO2/Si 기판위에 PLT(28) 박막을 증착시켜 planar 형태의 캐패시터를 제작하여 전기적 특성을 조사하였다. 그 결과, PLT(28) 박막은 상유전상을 가지며,10kHz에서 비유전률과 유전손실은 761 과 0.024 이었다. 또, 5V에서 전하축적 밀도와 누설전류밀도는 각각 134fC/$\mu$m2 과 1.01 $\mu$A/cm2 이었다. 이로부터, PLT(28) 박막이 차세대 DRAM 용 캐패시터 절연막으로 사용될 수 있는 유망한 재료라고 생각된다.다.

• 대한전자공학회논문지SD
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• 제46권2호
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• pp.9-14
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• 2009

본 연구에서는 sapphire 기판위에 P (phosphorus) 도핑된 ZnO 박막을 제작한 후, 산소 분위기에서 후열 처리 온도가 박막의 전기적 및 광학적 특성에 미치는 영향에 대해서 조사하였다. XRD 측정 결과, 후열 처리 온도에 무관하게 모든 박막이 c축 배향성을 나타내었다. Hall 측정 결과, $850^{\circ}C$에서 후열 처리한 박막에서만 p형 전도 특성이 관찰되었다. 이때의 홀 캐리어 농도와 홀 이동도는 각각 $1.18{\times}1016cm^{-3}$과 $0.96cm^2/Vs$의 값을 나타내었다. 저온 PL 측정 결과, $850^{\circ}C$에서 후열 처리한 박막의 경우 p형 특성을 나타내는 상당량의 억셉터가 관련된 A0X (3.351eV), FA(3.283eV) 및 DAP (3.201eV) 피크가 관찰되었다. 향후 P 도핑된 ZnO 박막의 공정 조건과 후열 처리 조건을 최적화시킨다면, 차세대 광소자에 응용될 수 있는 매우 유망한 재료로 주목받을 것으로 기대된다.

• 스마트미디어저널
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• 제6권3호
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• pp.89-94
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• 2017

기존의 지오펜스는 사용자의 관심 지역에 대한 가상의 영역을 설정하면, 설정된 영역에 대한 진/출입 상황인식 서비스만 제공한다. 최근 차세대 기술로서 주목받고 있는 커넥티드 카(Connected Cars)에 지오펜스 기술을 적용하면 추가적인 인프라 구축 비용 없이 응용 서비스가 가능하지만, 이를 위해선 기존 지오펜스의 기능을 확대하여 개선해야 한다. 본 논문에서는 커넥티드 카 기술을 지원하기 위해서 사전 연구된 모바일 3차원 지오펜스 시스템을 기반으로, 차량과 차량에 적용된 지오펜스 영역이 상황인식에 따라 반경이 변경되는 가변적인 모바일 지오펜스를 제안하고 구현한다. 제안된 가변적 모바일 지오펜스는 가변요인 분석에 의해 가변 결정 알고리즘을 적용한 후, 자신과 주변의 상황인식에 따라 지오펜스의 영역이 변경되는 것을 실험으로 나타낸다. 향후에는 본 논문에서 제안된 가변적인 지오펜스가 커넥티드 카 기술뿐만 아니라 안전하고 효율적인 차량 운행을 돕는 V2X(Vehicle to Everything)의 응용 기술로 활용될 것으로 전망한다.

• Journal of Plant Biotechnology
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• 제44권2호
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• pp.125-134
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• 2017

Enhanced disease susceptibility1 (EDS1) is a regulator of basal defense responses required for resistance mediated by TIR-NBS-LRR containing R proteins. We identified three transcripts of EDS1-like genes encompassing diverse/separate expression patterns, based on the transcriptome analysis by Next Generation Sequencing (NGS) of V. flexuosa inoculated with Elsinoe ampelina. These genes were designated VfEDL1 (Vitis flexuosa Enhanced Disease Susceptibility1-like1), VfEDL2 and VfEDL3, and contained 2464, 1719 and 1599 bp, with 1791, 1227 and 1599 bp open reading frames (ORFs), encoding proteins of 596, 408 and 532 amino acids, respectively. The predicted amino acid sequences of all three genes showed the L-family lipase-like domain (class 3 lipase domain), and exhibited a potential lipase catalytic triad, aspartic acid, histidine and serine in the conserved G-X-S-X-G. All three VfEDL genes were upregulated at 1 hpi against the bacterial and fungal pathogens Rizhobiumvitis and E. ampelina, respectively, except VfEDL1, which was downregulated against E. ampelina at all time points. Against E. ampelina, VfEDL2 and VfEDL3 showed downregulated expression at later time points. When evaluated against R. vitis, VfEDL1 showed downregulated expression at all time points after 1 hpi, while VfEDL3 showed upregulation up to 24 hpi. Based on the expression response, all three genes may be involved in plant resistant responses against R. vitis, and VfEDL2 and VfEDL3 show additional resistant responses against E. ampelina infection.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.