• Journal of the Korean Vacuum Society
• /
• v.8 no.1
• /
• pp.13-19
• /
• 1999

Total reflection X-ray fluorescence spectroscopy using synchrotron radiation source called as TRSFA was explored to achieve high sensitivities to impurity metals on Si wafer surface. It consists of monochromating part to select a specific wavelength, slit part to shield direct beam and to control monochromated beam, and main chamber to dectect fluorescent X-ray counts of impurities on si wafer. Monochromated X-ray of 10.90 KeV was selected and the optimum total reflection condition on silicon wafer was obtained through tuning the dead time and fluorescent X-ray count of Si and Fe. TRSFA system could increase the sensitivity as high as 50 times in comparision with TRXFA using normal X-ray source. But the trend was varied since the surface conditions of Si wafers and, therefore, the reflectivities were different. Furthemore, there seems to be a promising path to reaching a detection limit useful to the next generation metal impurities control, because Fe impurity below to the $5\times10^{9}\textrm{atomas/cm}^2$ can be detectable through the developed TRSFA system.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.575-575
• /
• 2012

Synthesis of novel two dimensional materials has gained tremendous attention recently as they are considered as alternative materials for replacing graphene that suffers from a lack of bandgap, a property that is essential for many applications. Single layer molybdenum disulfide ($MoS_2$) has a direct bandgap (1.8eV) that is promising for use in next-generation optoelectronics and energy harvesting devices. We have successfully grown high quality single layer $MoS_2$ by a facile vapor-solid transport route. As-grown single layer $MoS_2$ was carefully characterized by using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy and electrical transport measurement. The results indicate that a high quality single layer $MoS_2$ can be successfully grown on silicon substrate. This may open up great opportunities for the exploration of novel nanoelectronic devices.

• KIPS Transactions on Software and Data Engineering
• /
• v.4 no.7
• /
• pp.277-282
• /
• 2015

HL7 released V3 CDA(Clinical Document Architecture) and V2.x message standards for medical information exchange. Currently, these standards are successfully adopted by a number of nations across the globe. However, substantial amount of time is required to develop and implement these standards. Moreover, developers need a lot of time to understand these standards. To solve these issues from 2011, the HL7 standard framework started to discuss Fast Healthcare Interoperability Resources(FHIR) as next generation standard of healthcare information exchange. People's interests toward personal health record and smartphone penetration rate are growing and increasing rapidly. Therefore, our research team believes it is necessary to develop a PHR profiling system which could be accessed by using a smartphone and we developed the system. Through a FHIR Profile editor tool developed in Furore, we found that improvements could be made in generating and changing the profile. In order to build the PHR Profiling system, an Open-API on FHIR is used for exchanging information between electronic medical record system and PHR Profiling system. In the PHR Profiling system, the transactions of information between two systems are provided by RESTful service. In this study, we verify the efficiency of development of the PHR Profiling system through FHIR.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.375-375
• /
• 2014

Layered semiconductor materials can be a promising candidate for large-area thin film transistors (TFTs) due to their relatively high mobility, low-power switching, mechanically flexibility, optically transparency, and amenability to a low-cost, large-area growth technique like thermal chemical vapor deposition (CVD). Unlike 2D graphene, series of transition metal dichalcogenides (TMDCs), $MX_2$ (M=Ta, Mo, W, X=S, Se, Te), have a finite bandgap (1~2 eV), which makes them highly attractive for electronics switching devices. Recently, 2D $MoS_2$ materials can be expected as next generation high-mobility thin-film transistors for OLED and LCD backplane. In this paper, we investigate in detail the electrical characteristics of 2D layered $MoS_2$ local bottom-gated transistor with the same device structure of the conventional thin film transistor, and expect the feasibility of display application.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.784-787
• /
• 2002

We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.2
• /
• pp.9-14
• /
• 2009

The effects of post-annealing temperature on the optical and electrical properties of P-doped ZnO thin films grown on sapphire substrate have been investigated under oxygen ambient. The XRD shows that regardless of the post-annealing temperature, all P-doped ZnO thin films indicate the c-axis orientation. The results of hall effect measurements indicate the P-doped ZnO thin film annealed at $850^{\circ}C$ exhibits p-type behavior with hole concentration of $1.18{\times}1016cm^{-3}$ and hole mobility of $0.96cm^2/Vs$. The low-temperature (10K) Photoluminescence results reveal that the peak related to the neutral-acceptor exciton (A0X), free electrons to neutral acceptor (FA) and donor acceptor pair (DAP) at 3.351ev, 3.283eV and 3.201eV are observed in the films showing p-type behavior with acceptor. The optimization of deposition and post-annealing conditions will certainly make the P-doped ZnO thin films promising materials for the application to the next generation of optical devices.

• Smart Media Journal
• /
• v.6 no.3
• /
• pp.89-94
• /
• 2017

The existing geofences provide only context-awareness service for entering or leaving the set region when a user sets a virtual region for his/her PoI(Point of Interest). Applying the mobile-geofence technology to the connected car technology, which is attracting attention as a next generation technology, it is possible to provide application service without additional infrastructure construction cost However, to do this, we need to expand and improve the functions of traditional geofence. In this paper, we propose and implement a flexible mobile-geofence in which the radii of each geofence applied to vehicles is changed according to context-aware in order to support connected cars technology based on the previously studied mobile three-dimensional geofence system. The proposed flexible mobile-geofence shows experimentally that the region of the geofence is changed according to context-aware of itself and its surroundings after applying a flexible decision algorithm by the flexible factor analysis. In the future, we are expected that the flexible mobile-geofence proposed in this paper will be applied not only to connected-cars technology but also to the application technology of V2X(Vehicle to Everything) for safe and efficient vehicle operation.

• Journal of Plant Biotechnology
• /
• v.44 no.2
• /
• pp.125-134
• /
• 2017

Enhanced disease susceptibility1 (EDS1) is a regulator of basal defense responses required for resistance mediated by TIR-NBS-LRR containing R proteins. We identified three transcripts of EDS1-like genes encompassing diverse/separate expression patterns, based on the transcriptome analysis by Next Generation Sequencing (NGS) of V. flexuosa inoculated with Elsinoe ampelina. These genes were designated VfEDL1 (Vitis flexuosa Enhanced Disease Susceptibility1-like1), VfEDL2 and VfEDL3, and contained 2464, 1719 and 1599 bp, with 1791, 1227 and 1599 bp open reading frames (ORFs), encoding proteins of 596, 408 and 532 amino acids, respectively. The predicted amino acid sequences of all three genes showed the L-family lipase-like domain (class 3 lipase domain), and exhibited a potential lipase catalytic triad, aspartic acid, histidine and serine in the conserved G-X-S-X-G. All three VfEDL genes were upregulated at 1 hpi against the bacterial and fungal pathogens Rizhobiumvitis and E. ampelina, respectively, except VfEDL1, which was downregulated against E. ampelina at all time points. Against E. ampelina, VfEDL2 and VfEDL3 showed downregulated expression at later time points. When evaluated against R. vitis, VfEDL1 showed downregulated expression at all time points after 1 hpi, while VfEDL3 showed upregulation up to 24 hpi. Based on the expression response, all three genes may be involved in plant resistant responses against R. vitis, and VfEDL2 and VfEDL3 show additional resistant responses against E. ampelina infection.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.65-65
• /
• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.289.2-289.2
• /
• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.