• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.49-59
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 1992.07a
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• pp.77-78
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• 1992

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.816-825
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• 2002

During the manufacture of a ship, longitudinal deformation is produced by fillet welding on the BuiltUp beam used to improve the longitudinal strength of a ship. This deformation needs a correcting process separate from a manufacture process and decreases productivity and quality. This deformation is caused by welding moment, which is the value multiplied the shrinking force due to welding by the distance from the neutral axis on a cross section of Built-Up beam. This deformation can be offset by generating a moment which is the same magnitude with and is located in an opposite direction to the welding moment on web plate by induction heating. Accordingly, this study clarifies the creation mechanism of the longitudinal deformation on Built-Up beam with FEM analysis and presents the preventative method of this deformation by induction heating basing the mechanism and verifies its validity through analysis and experiments. The induction heating used here is performed by deciding its location and quantity with experiments and simple equations and by applying them to areal structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.3
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• pp.313-318
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• 2005

Li-doped ZnS layers were grown by molecular beam epitaxy. It was found that relatively low growth temperature is suitable for effective incorporation of Li acceptors. The layers grown under optimized conditions exhibited photoluminescence spectra dominated by neutral-acceptor-bound excitons. Such layers also showed electrically p-type behavior in capacitance-voltage characteristics. The net acceptor concentration is estimated to be approximately $3{\times}10^{15}\;cm^{-3}$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.107-107
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• 2009

본 연구에서는 중성빔을 이용한 Atomic Layer Etching(ALET) system을 이용하여 $ZrO_2$의 atomic layer etching mechanism에 대하여 연구하였다. Ar neutral beam irradiation dose와 $BCl_3$ gas pressure의 변화에 따라 $ZrO_2$ etch rate와 RMS roughness를 관찰했을 때, Ar neutral beam irradiation dose이 $1.485{\times}10^{16}atoms/cm^2{\bullet}cycle$ 이상이고 $BCl_3$ gas pressure가 0.15mTorr 이상 일 때 $ZrO_2$ etch rate은 $1.07\;{\AA}/cycle$의 일정한 값에서 유지됨을 확인하였다. 그리고 ALET와 ICP Etcher을 통해 $ZnO_2$를 각각 식각하여 physically or chemically damage를 비교한 결과, ALET가 기존의 ICP Etcher system보다 $ZrO_2$ 식각공정에 대해 적은 damage를 받는 것을 ARXPS를 통해 관찰 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.465-465
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• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.272-273
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• 2001

We demonstrate the first separation of neutral molecules using optical forces. Unlike laser atomic cooling or optical tweezers, optical separation technique requires the manipulation of only one component of the molecular motion. Thus the mixtures can be separated, in principle, with less complex schemes. When an Intense nonresonant laser beam is focused onto a beam of molecules, the interaction between the laser electric field and the induced dipole moment of a molecule invokes a mechanical force on the molecule proportional to the field gradient and the molecular polarizability ($\alpha$) to mass (m) ratio $\alpha$/m. (omitted)

• Proceedings of the KIPE Conference
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• 2010.11a
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• pp.30-31
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• 2010

Filament power supply (FPS) for neutral beam injection (NBI) consists of an insulation type is a device that heats the interior of Tokamak. The input/output specifications of FPS are 3-phase AC 200[Vpeak] and DC16V/300A respectively. A conventional FPS is composed of a 3-phase diode rectifier with DC-link, a H-bridge DC/DC converter, a high frequency transformer, a secondary rectifier and a LC-filter. In this paper, to improve the efficiency of PSFB DC/DC converter it is substituted IGBT devices instead of diode rectifier in secondary side. The proposed method is verified by computer simulation and experiment result.