• Transactions of the Korean hydrogen and new energy society
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• v.26 no.5
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• pp.416-422
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• 2015

Lithium Ion capacitor (LIC) is a new storage device which combines high power density and high energy density compared to conventional supercapacitors. LIC is capable of storing approximately 5.10 times more energy than conventional EDLCs and also have the benefits of high power and long cycle-life. In this study, LICs are assembled with activated carbon (AC) cathode and pre-doped graphite anode. Cathode material of natural graphite and artificial graphite kinds of MAGE-E3 was selected as the experiment proceeds. Super-P as a conductive agent and PTFE was used as binder, with the graphite: conductive agent: binder of 85: 10: 5 ratio of the negative electrode was prepared. Lithium doping condition of current density of $2mA/cm^2$ to $1mA/cm^2$, and was conducted by varying the doping. Results Analysis of Inductively Coupled Plasma Spectrometer (ICP) was used and a $1mA/cm^2$ current density, $2mA/cm^2$, when more than 1.5% of lithium ions was confirmed that contained. In addition, lithium ion doping to 0.005 V at 10, 20 and $30^{\circ}C$ temperature varying the voltage variation was confirmed, $20^{\circ}C$ cell from the low internal resistance of $4.9{\Omega}$ was confirmed.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.2
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• pp.51-55
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• 1997

The high frequency fluorescnet lighting systems are widely used because of their high luminous efficacy. However, the performance of the fluorescnet lamp at high frequency reveals significant changes depending upon operating frequency, lamp shape, lamp voltage and current while adapting either an electronic or an magnetic ballast. Therefore the matching between the fluorescent lamp and the ballast is the major concern in designing a lighting system. In this paper, high frequency characteristics of the FHF32W lamp is measured in a range of frequencies from 12kHz to 50kHz. And we presented a model of a fluorescnet lamp with non-linear impedance depending on the lamp current. Finally, after identifying the operating condition under negative imped¬ance behavior as lamp current changing, we proposed a method of choosing the optimal parameter of a high frequency fluorescnet lamp and the result is analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.43-44
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• 2007

SiO and graphite composite has been prepared by adopting high energy ball milling technique. The anode material shows high initial discharge and charge capacity values of 1138 and 568 mAh/g, respectively. Since the materials formed during initial discharge process the nano silicon/$Li_4SiO_3\;and\;Li_2O$ remains as interdependent, it may be expected that the composite exhibiting higher amount of irreversible capacity$(Li_2O)$ will deliver higher reversible capacity. In this study, pretreatment method of constant current-constant voltage (CC-CV) Provided high coulombic efficiency of SiO/C composite electrode removing the greater part of irreversible capacity.

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.345-349
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• 2017

The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to $1.5{\times}10^{16}electrons/cm^2$. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level($E_F$) of the sample irradiated with $1.5{\times}10^{16}electrons/cm^2$ was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.249-253
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• 2000

We have analyzed electrical characteristics of the amorphous $MgTiO_3$thin films deposited by pulsed laser deposition (PLD) technique with the temperature of 400~$500^{\circ}C$. The electrical characteristics of $MgTiO_3$films heavily depend on the deposition temperature. We speculate that the density of anomalous positive charge (APC) substantially increases as the deposition temperature lowers, causing the HF C-V curves shift to the direction of the negative gate voltage. We further observed that both the degree of C-V shift as a function of the deposition temperature and the density of APC were minimized by the use of $SiO_2$with thickness of approximately 100 $\AA$ between $MgTiO_3$films and the Si substrate.

• Aerospace Engineering and Technology
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• v.7 no.1
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• pp.115-120
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• 2008

The thermistors and AD590 are widely used for temperature measurement in space application. The resistance of thermistor will vary according to the temperature variation therefore the external voltage or current stimulus signal have to be provided to measure resistance variation. Recently high resolution electro optic camera system of satellite requires tight thermal control of the camera structure to minimize the thermal structural distortion which can affects the image quality. In order to achieve $1^{\circ}$(deg C) thermal control requirement, the accuracy of temperature measurement have to be higher than $0.3^{\circ}$(deg C). In this paper, the accuracy of temperature measurement using thermistors is estimated and analyzed.

• Archives of Pharmacal Research
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• v.29 no.4
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• pp.310-317
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• 2006

We investigated the effects of trinitrobenzene sulfonic acid (TNBS), an amino-group reagent, on the human ether-a-go-go-related gene (HERG) $K^+$ channels expressed in Xenopus oocytes. TNBS neutralizes the positively charged amino-groups of peptide N-terminal and lysine residues. External application of TNBS at 10 mM for 5 min irreversibly shifted the curves for currents at the end of the pulse and tail currents of HERG to a more negative potential and decreased the maximal amplitude of the $I_{tail}$ curve $(I_{tail,max})$. TNBS had little effect on either the activated current-voltage relationship or the reversal potential of HERG current, indicating that TNBS did not change ion selectivity properties. TNBS shifted the time constant curves of both activation and deactivation of the HERG current to a more hyperpolarized potential; TNBS's effect was greater on channel opening than channel closing. External $H^+$ is known to inhibit HERG current by shifting $V_{1/2}$ to the right and decreasing $I_{tail,max}$. TNBS enhanced the blockade of external $H^+$ by exaggerating the effect of $H^+$ on $I_{tail,max}$, not on $V_{1/2}$. Our data provide evidence for the presence of essential amino-groups that are associated with the normal functioning of the HERG channel and evidence that these groups modify the blocking effect of external $H^+$ on the current.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Plant Journal
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• v.16 no.4
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• pp.40-44
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• 2020

In this study, after supplying a pulse wave to the 2 V Industrial Lead-Acid Battery electrode plate and repeating the charging and discharging, the discharging time per voltage was analyzed. According to the result of experiment, while the lead-acid Battery that a pulse wave is not supplied decreased about 18 % of discharging capacity than the beginning, the lead-acid Battery that a pulse wave is supplied decreased a little amount much lower than 18 %, of discharging capacity and recorded the 0.56 % decrease, at a minimum, from discharging capacity at the 20 kHz frequency. This means that the sulfate on electrode plate is detached and the positive and negative charge transfer is highly activated at the 20 kHz frequency

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.7
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• pp.816-821
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• 2019

A counter-type time-to-digital converter was designed using a dual edge T flip-flop. The time-to-digital converter was designed with a $0.18{\mu}m$ CMOS process at a supply voltage of 1.5 volts. In a typical time-to-digital converter, when the period of the clock is T, a conversion error corresponding to the period of the clock occurs due to the asynchronism between the input signal and the clock. However, the clock of the time-to-digital converter proposed in this paper is generated in synchronization with the start signal which is the input signal. As a result, conversion errors that may occur due to asynchronization of the start signal and the clock do not occur. The flip-flops constituting the counters are composed of dual-edge flip-flops operating at the positive and negative edges of the clock to improve the resolution.