• Journal of Electrical Engineering and Technology
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• v.1 no.4
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• pp.423-426
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• 2006

Distance relays achieve selective tripping by measurement of all short circuit fault conditions inside set reaches. The direction of the fault, forward or reverse is commonly determined with a dedicated measurement to ensure selectivity under all conditions. For the direction decision (measurement) a number of alternatives are available. This paper describes a loop selective direction measurement and illustrates by means of a typical fault why this is superior to a non loop selective direction measurement such as that based on negative sequence quantities.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1653-1655
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• 2003

The purpose of this paper is to evaluate the effects of pre-formed space charge by negative DC voltage on partial discharge(PD) patterns of XLPE. We have suggested a modified pulsed electro-acoustic method and demonstrated that the PD patterns are strongly influenced by the pre-formed space charge distributions, which are hardly disappeared up to AC 8kV in electrode configuration including air gap between XLPE layer and electrode.

• Bulletin of the Korean Chemical Society
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• v.29 no.9
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• pp.1847-1849
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• 2008

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.

• Journal of Power Electronics
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• v.19 no.1
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• pp.234-243
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• 2019

Studying the control strategy of a microgrid under the load unbalanced state helps to improve the stability of the system. The magnitude of the power fluctuation, which occurs between the power supply and the load, is generated in a microgrid under the load unbalanced state is called negative sequence reactive power $Q^-$. Traditional power distribution methods such as P-f, Q-E droop control can only distribute power with positive sequence current information. However, they have no effect on $Q^-$ with negative sequence current information. In this paper, a stationary-frame control method for power sharing and voltage unbalance compensation in islanded microgrids is proposed. This method is based on the proper output impedance control of distributed generation unit (DG unit) interface converters. The control system of a DG unit mainly consists of an active-power-frequency and reactive-power-voltage droop controller, an output impedance controller, and voltage and current controllers. The proposed method allows for the sharing of imbalance current among the DG unit and it can compensate voltage unbalance at the same time. The design approach of the control system is discussed in detail. Simulation and experimental results are presented. These results demonstrate that the proposed method is effective in the compensation of voltage unbalance and the power distribution.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.4
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• pp.251-265
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• 2001

As the device scaling proceeds, the operating voltage(VDD) of giga-bit DRAMs is expected to be reduced to 1.5V or down, fir improving the device reliability and reducing the power dissipation. Therefore the low-voltage circuit design techniques are required to implement giga-bit DRAMs. In this work, state-of-art low-voltage DRAM circuit techniques are reviewed, and four kinds of low-voltage circuit design techniques are newly proposed for giga-bit DRAMs. Measurement results of test chips and SPICE simulation results are presented for the newly proposed circuit design techniques, which include a hierarchical negative-voltage word-line driver with reduced subthreshold leakage current, a two-phase VBB(Back-Bias Voltage) generator, a two-phase VPP(Boosted Voltage) generator and a bandgap reference voltage generator.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.22-28
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• 2004

Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.9
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• pp.1315-1322
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• 2015

This paper proposes an active islanding detection method for the BESS (Battery Energy Storage System) with 3-phase inverter which is connected to the AC grid. The proposed method adopts the DDSRF (Decoupled Double Synchronous Reference Frame) PLL (Phase Locked-Loop) so that the independent control of positive-sequence and negative-sequence current is successfully carried out using the detected phase angle information. The islanding state can be detected by sensing the variation of negative-sequence voltage at the PCC (Point of Common Connection) due to the injection of 2-3% negative-sequence current from the BESS. The proposed method provides a secure and rapid detection under the variation of negative-sequence voltage due to the sag and swell. The feasibility of proposed method was verified by computer simulations with PSCAD/EMTDC and experimental analyses with 5kW hardware prototype for the benchmark circuit of islanding detection suggested by IEEE 1547 and UL1741. The proposed method would be applicable for the secure detection of islanding state in the grid-tied Microgrid.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.811-818
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• 2016

A continuous fine-tuning phase locked loop with an additional negative feedback loop has been proposed. When the phase locked loop is out-of-lock, the phase locked loop has a fast locking characteristic using the continuous band-selection loop. When the phase locked loop is near in-lock, the bandwidth is narrowed with the fine loop. The additional negative feedback loop consists of a voltage controlled oscillator, a frequency voltage converter and its internal loop filter. It serves a negative feedback function to the main phase locked loop, and improves the phase noise characteristics and the stability of the proposed phase locked loop. The additional negative feedback loop makes the continuous fine-tuning loop work stably without any voltage fluctuation in the loop filter. Measurement results of the fabricated phase locked loop in $0.18{\mu}m$ CMOS process show that the phase noise is -109.6dBc/Hz at 2MHz offset from 742.8MHz carrier frequency.

• The Korean Journal of Physiology and Pharmacology
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• v.5 no.5
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• pp.367-371
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• 2001

The chromosome 7-linked long QT syndrome (LQT2) is caused by mutations in the human ether-a- go-go-related gene (HERG) that encodes the rapidly activating delayed rectifier $K^+$ current, $I_{Kr},$ in cardiac myocytes. Different types of mutations have been identified in various locations of HERG channel. One of the mechanisms for the loss of normal channel function is due to membrane trafficking of channel protein. The decreased channel function in some deletion mutants appears to be due to loss of coupling with wild type HERG to form the functional channel as the tetramer. Most of missense mutants with few exceptions could interact with wild type HERG to form functional tetramer and caused dominant negative suppression with co-injection with wild type HERG showing variable effects on current amplitude, voltage dependence, and kinetics of activation and inactivation. Two missense mutants at pore regions of HERG found in Japanese LQT2 (A614V and V630L) showed accentuated inward rectification due to a negative shift in steady-state inactivation and fast inactivation. One mutation in S4 region (R534C) produced a negative shift in current activation, indicating the S4 serving as the voltage sensor and accelerated deactivation. The C-terminus mutation, S818L, could not express the current by mutant alone and did not show dominant negative suppression with co-injection of equal amount of wild type cRNA. Co-injection of excess amount of mutant with wild type produced dominant negative suppression with a shift in voltage dependent activation. Therefore, multiple mechanisms are involved in different mutations and functional abnormality in LQT2. Further characterization with the interactions between various mutants in HERG and the regulatory subunits of the channels (MiRP1 and minK) is to be clarified.