• 제목/요약/키워드: Negative voltage

검색결과 941건 처리시간 0.029초

부스트 Negative Bias를 가지는 단상 SRM 컨버터 (Single Phase SRM Converter with Boost Negative Bias)

  • ;석승훈;이동희;안진우
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.879-880
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    • 2008
  • At the high speed operation, the boost negative bias can reduce the negative torque and increase the dwell angle, so the output power and efficiency can be improved. In this paper, a novel power converter for single phase SRM with boost negative bias is proposed. A simple passive capacitor circuit is added in the front-end, which consists of three diodes and one capacitor. Based on this passive capacitor network, the two capacitors can be connected in series and parallel in different condition. In proposed converter, the phase winding of SRM obtains general dc-link voltage in excitation mode and the double dc-link voltage in demagnetization mode. The operation modes of the proposed converter are analyzed in detail. Some computer simulation and experimental results are done to verify the performance of proposed converter.

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PMIC용 512비트 MTP 메모리 IP설계 (Design of a 512b Multi-Time Programmable Memory IPs for PMICs)

  • 장지혜;하판봉;김영희
    • 한국정보전자통신기술학회논문지
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    • 제9권1호
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    • pp.120-131
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    • 2016
  • 본 논문에서는 back-gate bias 전압인 VNN (Negative Voltage)을 이용하여 5V의 MV (Medium Voltage) 소자만 이용하여 FN (Fowler-Nordheim) tunneling 방식으로 write하는 MTP cell을 사용하여 512비트 MTP IP를 설계하였다. 사용된 MTP cell은 CG(Control Gate) capacitor, TG(Tunnel Gate) transistor와 select transistor로 구성되어 있다. MTP cell size를 줄이기 위해 TG transistor와 select transistor를 위한 PW(P-Well)과 CG capacitor를 위한 PW 2개만 사용하였으며, DNW(Deep N-Well)은 512bit MTP cell array에 하나만 사용하였다. 512비트 MTP IP 설계에서는 BGR을 이용한 voltage regulator에 의해 regulation된 V1V (=1V)의 전압을 이용하여 VPP와 VNN level detector를 설계하므로 PVT variation에 둔감한 ${\pm}8V$의 pumping 전압을 공급할 수 있는 VPP와 VNN 발생회로를 제안하였다.

Detail relation of negative ion density with positive ion mass and sheath parameters

  • Kim, Hye-Ran;Woo, Hyun-Jong;Sun, Jong-Ho;Chung, Kyu-Sun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.470-470
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    • 2010
  • Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

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고전압 초전도코일 개발을 위한 이용률에 따른 $SF_6$가스의 절연특성에 관한 연구 (Analysis on the Dielectric Characteristics of $SF_6$ Gas for Developing a High Voltage Superconducting Coil)

  • 남석호;홍종기;허정일;강형구
    • Progress in Superconductivity
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    • 제13권3호
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    • pp.189-194
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    • 2012
  • Studies on the development of high voltage superconducting apparatuses, such as transmission superconducting fault current limiters (SFCLs) and superconducting cables, have been performed worldwide. In this paper, a study on the electrical insulation characteristics of electro negative gas according to various pressures and utilization factors was conducted as a part of developing a high voltage superconducting coil with a sub-cooled nitrogen cooling system. Some gases such as helium (He), nitrogen ($N_2$), and sulfur hexafluoride ($SF_6$) are considered for pressurizing the sub-cooled nitrogen cooling system of high voltage SFCLs and superconducting cables. $SF_6$ is used to pressurize and enhance the dielectric performance of a superconducting system of a sub-cooled nitrogen cooling system for superconducting cables being developed in the Republic of Korea. In this paper, dielectric experiments on AC voltage, as well as lightning impulse voltage of $SF_6$, are conducted according to various utilization factors by using several kinds of sphere-to-plane electrode systems. As results, it is known that the empirical formulae of $SF_6$, known as an electro negative gas, are derived according to various pressures and utilization factors. Also, the appropriate pressure condition for designing a high voltage superconducting coil is found from the viewpoint of dielectric performance.

고집적 메모리의 yield 개선을 위한 전기적 구제회로 (An Electrical Repair Circuit for Yield Increment of High Density Memory)

  • 김필중;김종빈
    • 한국전기전자재료학회논문지
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    • 제13권4호
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    • pp.273-279
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    • 2000
  • Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.

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Voltage Distortion Suppression for Off-grid Inverters with an Improved Load Current Feedforward Control

  • Geng, Yiwen;Zhang, Xue;Li, Xiaoqiang;Wang, Kai;Yuan, Xibo
    • Journal of Power Electronics
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    • 제17권3호
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    • pp.716-724
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    • 2017
  • The output voltage of an off-grid inverter is influenced by load current, and the voltage harmonics especially the 5th and 7th are increased with nonlinear loads. In this paper, to attenuate the output voltage harmonics of off-grid inverters with nonlinear loads nearby, a load current feedforward is proposed. It is introduced to a voltage control loop based on the Positive and Negative Sequence Harmonic Regulator (PNSHR) compensation to modify the output impedance at selective frequencies. The parameters of the PNSHR are revised with the output impedance of the off-grid inverter, which minimizes the output impedance of the off-grid inverter. Experimental results verify the proposed method, showing that the output voltage harmonics caused by nonlinear loads can be effectively suppressed.

STM에 의한 Dipyridinium 유기분자의 전압-전류 특성 연구 (A Study on the Current-voltage Properties of Dipyridinium Molecule using Scanning Tunneling Microscopy)

  • 이남석;신훈규;장정수;권영수
    • 한국전기전자재료학회논문지
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    • 제18권7호
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    • pp.622-627
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    • 2005
  • In this study, electrical properties of self-assembled dipyridinium dithioacetate molecule onto the Au(111) substrate is observed using Scanning Tunneling Microscopy(STM) by vortical structure of STM probe. At first, the Au(111) substrate is cleaned by piranha solution$(H_2SO_4:H_2O_2\;=\;3:1)$. Subsequently, 1 mM/ml of dipyridinium dithioacetate molecule is self-assembled onto the Au(111) surface. Using STM, the images of dipyridinium dithioacetate molecule which is self-assembled onto the Au(111) substrate, can be observed. In addition, the electrical properties(I-V) of dipyridinium dithioacetate can also be examined by using Scanning Tunneling Spectroscopy(STS). From the results of the measurement of the current-voltage(I-V), the property of Negative Differential Resistance(NDR) that shows the decreases of current according to the increases of voltage is observed. We found the NDR voltage of the dipyridinium dithioacetate is -1.42 V(negative region) and 1.30 V(positive region), respectively.

$SF_6-N_2$혼합기체 중에서 불평등전계 갭의 임펄스 절연파괴 특성 (Impulse Breakdown Characteristics of Nonuniform Field Gap in SF_6-N_2 Mixtures)

  • 이복희;이경옥;김정일
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권9호
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    • pp.533-540
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    • 2000
  • Lightning impulse $(1.2/44[\mus])$ and damped oscillating impulse $(Osc./44[\mus])$ : 0.83[MHz]) breakdown characteristics in sulphur-hexafluoride/nitrogen (SF6-N2) mixtures were investigated. The predischarge currents were observed to clarify the breakdown mechanism. th experiments were carried out under nonuniform electric fields disturbed by a needle-shaped protrusion whose length and diameter are 10[mm] and 1[mm] at total gas pressure up to 0.5[MPa] with nitrogen concentrations varying from 5 to 20[%] in the mixture. The electrical breakdowns of SF6-N2 mixtures for both the positive and negative polarities develop with steplike pulses in leader mechanism and the breakdown voltage -time (V-t) characteristics were affected by the space charge. The voltage-time curves for the negative oscillating impulse voltage were extended over the longer time range. The minimum breakdown voltages for the negative lightning and oscillating impulse voltage were higher than those for the positive ones. in particular the positive breakdown voltages were independent of the gas pressure.

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Keggin 형 및 Wells-Dawson 형 헤테로폴리산 촉매의 STM 연구 (STM Studies of Keggin-type and Wells-Dawson-type Heteropolyacid Catalysts)

  • 박교익;마크 바토;정지철;송인규
    • Korean Chemical Engineering Research
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    • 제47권2호
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    • pp.163-168
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    • 2009
  • 본 연구에서는 양이온, 중심원소, 배위원소가 치환된 Keggin 형 및 Wells-Dawson 형 헤테로폴리산 촉매의 NDR(negative differential resistance) 거동을 STM(scanning tunneling microscopy)을 이용하여 살펴보았다. 헤테로폴리산 촉매의 NDR 전압과 산화환원능력 사이에는 일정한 상관관계가 있었다. 촉매의 구조적 차이에 상관없이 산화환원능력이 높은 헤테로폴리산 촉매는 보다 낮은 음전압에서 NDR 거동을 나타내었다. 이처럼 NDR 전압은 촉매의 산화환원능력을 대변하는 하나의 correlating parameter로 활용될 수 있었다.

The far-end crossta1k voltage for CMOS-IC load

  • Miyao, Nobuyuki;Noguchi, Yasuaki;Matsumoto, Fujihiko
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -3
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    • pp.1878-1881
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    • 2002
  • The capacitance of nonlinear component such as a CMOS inverter varies largely around the threshold voltage. We measured the far-end crosstalk of two parallel microstrip lines with the CMOS inverter load near the threshold voltage of the CMOS inverter, The negative voltage of the crosstalk agrees with that for a 4pF capacitor toad. The positive voltage of the crosstalk hardly changes of the amplitude of the input step voltage.

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