• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.130-131
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• 2009

AIP(arc ion plating)방법과 마그네슘 스퍼터링(DC reactive magnetron sputtering) 방법을 결합시킨 하이브리드 코팅 시스템으로 Cr-Si-N 코팅막을 합성하였다. 고분해능 TEM 및 SEM 분석들로부터 negative bias voltage에 따른 미세구조의 영향을 나타내었다. negative bias voltage의 증가에 따라 columnar microstructure가 amorphous microstructure로 변화하였다. bias voltage effect에 의해 Cr-Si-N 코팅막내 입자의 크기가 미세해지고 나노 복합체를 잘 형성하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.159-160
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• 2009

AIP(arc ion plating)방법으로 CrN 코팅막을 합성하였다. 고분해능 SEM과 AFM 분석들로부터 negative bias voltage에 따른 미세구조의 영향을 나타내었다. negative bias voltage의 증가에 따라 columnar microstructure가 amorphous microstructure로 변화하였다. bias voltage effect에 의해 CrN 코팅막내 입자의 크기가 미세해지고 나노 복합체를 잘 형성하였다.

• 센서학회지
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• 제28권5호
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• pp.329-333
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• 2019

Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

• 한국결정성장학회지
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• 제15권5호
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• pp.198-201
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• 2005

Carbon nanofibers were formed on silicon substrate which was applied by negative direct current (DC) bias voltage using microwave plasma-enhanced chemical vapor deposition method. Formation of carbon nanofibers were varied according to the variation of the applied bias voltage. At -250 V, we found that the growth direction of carbon nanofibers followed the applied direction of the bias voltage. Based on these results, we suggest one of the possible techniques to control the growth direction of the carbon nanofibers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1258-1261
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• 2005

The ramp type bias voltage applied to the common electrode during a reset-period is newly proposed to lower the background luminance and to improve the address discharge characteristics in AC-PDP. The positive ramp bias voltage is applied during the ramp-up period, whereas the negative ramp bias voltage is applied during the ramp-down period. The effects of the voltage slopes in both the positive and negative ramp bias voltages on the background luminance and address voltage characteristics are examined intensively. It is observed that the optimized positive and negative ramp bias voltages applied to the common electrode during the ramp-period can lower the background luminance and also enhance the address discharge characteristics of the AC-PDP.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 추계학술대회
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• pp.425-428
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• 2017

본 논문에서는 진동 에너지를 이용하여 에너지를 수확하는 전파 정류 하베스팅 회로를 설계하였다. 설계된 회로는 저전압에서도 전력효율이 우수하도록 Beta-Multiplier를 이용하여 Body-Bias technique을 Negative Voltage Converter에 적용하였으며, Comparator를 Bulk-Driven type으로 설계하였다. 제안된 회로는 $0.35{\mu}m$ CMOS 공정으로 설계하였으며, 설계된 회로의 칩 면적은 $931{\mu}m{\times}785{\mu}m$이다.

• ETRI Journal
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• 제32권3호
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• pp.406-413
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• 2010

In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back-bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back-bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back-bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of -0.85 $mV/^{\circ}C$, and its static current consumption is found to be only 0.83 ${\mu}A$@2.0 V.

• 한국표면공학회지
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• 제54권3호
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.

• 한국진공학회지
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• 제14권1호
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• pp.17-23
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• 2005

본 논문은 글로우방전 질량분석법(Glow Discharge Mass Spectrometry: GDMS)을 이용하여 구리 박막내의 미량 불순물의 농도분석과 음의 기판 바이어스에 대한 구리 박막내의 불순물의 농도변화에 대해서 고찰하였다. 구리 박막은 실리콘 기판 위에 비질량 분리형 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -50 V의 기판 바이어스를 걸은 상태에서 증착하였다. 전기를 통하지 않는 분석 샘플의 경우, 직류(DC) GDMS에 의한 분석시, 샘플 표면에서의 charge-up 효과에 의해 분석에 어려움이 있었지만, 본 실험에서는 간편하게 분석이 가능하도록 샘플을 알루미늄 포일(foil)로 감싸서 구리 박막으로부터 실리콘 기판 뒤의 샘플 홀더까지 전기적 접촉이 이루어지도록 하였다. 구리 타겟과 증착된 구리 박막들에 대한 GDMS 분석결과에 의해서, 전체적으로 박막내의 불순물의 양이 음의 기판 바이어스에 의해 줄어듦으로써 구리 박막의 전체 순도를 높일 수 있다는 것을 알게 되었다. 음의 기판 바이어스에 의한 불순물들의 농도변화는 각각의 불순물의 이온화 포텐셜의 차이에 의한 것으로, 박막 증착시 플라즈마내의 Penning ionization effect와 본 논문에서 제시한 이온화 과정에 의해 각 불순물의 농도변화가 설명되어질 수 있었다. 또한, 기판 위에서의 구리 이온들의 충격에 의한 cleaning effect도 박막내의 불순물의 농도변화에 기여했다고 판단된다.