• 한국환경과학회지
• /
• 제26권4호
• /
• pp.447-456
• /
• 2017

Chemical properties of aerosols were investigated by analyzing the inorganic water-soluble content in $PM_{2.5}$ collected in the downtown area of Jeju City in Jeju Island. Due to an increase in both the number of visiting tourists and the size of local population, the number of cars in this area is increasing, causing an increase in $PM_{2.5}$. Eight $PM_{2.5}$-bound major inorganic ions were analyzed during the summer and winter periods. The water-soluble inorganic component represents a significant fraction of $PM_{2.5}$. In particular, secondary inorganic aerosols contribute 36.2% and 47.5% of $PM_{2.5}$ mass in summer and winter, respectively. Nitrate concentrations increase for $[NH_4{^+}]/[SO_4{^{2-}}]$>1.5, and excess ammonium, which is necessary for ammonium nitrate formation, is linearly correlated with nitrate. These results are clearly observed during the winter because conditions are more conducive to the formation of ammonium nitrate. A significant negative correlation between Nitrogen Oxidation Ratio (NOR) and temperature was observed. The obtained results can be useful for a better understanding of the aerosol dynamics in the downtown area in Jeju City.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권4호
• /
• pp.426-433
• /
• 1995

Effect of boron in GaAs have been investigated by photo induced current transient spectroscopy(PICTS). The starting material was undoped liquid encapsulated Czochralski(LEC) semi insulating GaAs and boron ion implantation at 150keV energy was conducted with dose of 10$\^$12/ and 10$\^$13/ions/cm$\^$2/. In ion implanted samples, the peaks related arsenic vacancy(V$\_$As/) were decreased but complex lattice defect was increased with annealing temperature. U band was observed at ion implanted(10$\^$13/ ions/cm$\^$2/) and thermally treated(550.deg. C) sample. More negative peak was detected after annealing at temperature between 600 and 700.deg. C. The measurement of dark current showed that the formation of B$\_$GA/-V$\_$As/, complex defect and complex lattice defect by ion implantation were a reasonable explanation for the decrease in dark current.

• Bulletin of the Korean Chemical Society
• /
• 제34권12호
• /
• pp.3659-3664
• /
• 2013

Eight representative explosives (ammonium perchlorate (AP), ammonium nitrate (AN), trinitrotoluene (TNT), 2,4-dinitrotoluene (DNT), cyclonite (RDX), cyclotetramethylenetetranitramine (HMX), pentaerythritol tetranitrate (PETN), and hexanitrostilbene (HNS)) were comprehensively analyzed with an ion trap mass spectrometer in negative ion mode using direct infusion electrospray ionization. MS/MS experiments were performed to generate fragment ions from the major parent ion of each explosive. Explosives in salt forms such as AP or AN provided cluster parent ions with their own anions. Explosives with an aromatic ring were observed as either $[M-H]^-$ for TNT and DNT or $[M]^{{\cdot}-}$ for HNS, while explosives without an aromatic ring such as RDX, HMX, and PETN were detected as an adduct ion with a formate anion, i.e., $[M+HCOO]^-$. These findings provide a guideline for the rapid and accurate detection of explosives once portable MS instruments become more readily available.

• Journal of Electrochemical Science and Technology
• /
• 제4권4호
• /
• pp.140-145
• /
• 2013

This study describes the electrodeposition of $Cu_2Se$ thin films with a two-step approach that is based on the initial modification of polycrystalline Au electrode with a selenium overlayer followed by a cathodic stripping of the layer as $Se^{2-}$ in a 1 M lactic acid electrolyte containing $Cu^{2+}$ ions. For this two-step approach to be effective, the $Cu^{2+}$ reduction potential should be shifted to more negative potentials passed potentials for the reduction of Se to $Se^{2-}$. This was accomplished by the complexation of $Cu^{2+}$ ions with lactic acid. The resultant $Cu_2Se$ films were characterized by linear sweep voltammetry combined with electrochemical quartz crystal microgravimetry, UV-vis absorption spectrometry and Raman spectroscopy. Photoelectrochemical experiments revealed that $Cu_2Se$ synthesized thus, behaved as a p-type semiconductor.

• 한국분말재료학회지
• /
• 제15권6호
• /
• pp.450-457
• /
• 2008

The objectives of this study were the development of a synthesis technique for highly active nanosized ITO powder and the understanding of the reaction mechanisms of the ITO precursors. The precipitation and agglomeration phenomena in ITO and $In_{2}O_{3}$ precursors are very sensitive to reaction temperature, pH, and coexisting ion species. Excessive $Cl^-$ ion and $Sn^{+4}$ ions had a negative effect an synthesizing highly active powders. However, with a relevant stabilizing treatment the shape and size of ITO and $In_{2}O_{3}$ precursors could be controlled and high density sintered products of ITO were obtained. By applying the reprecipitation process (or stabilization technique), highly active ITO and $In_{2}O_{3}$ powders were synthesized. Sintering these powders at $1500^{\circ}C$ for 5 hours produced 97% dense ITO bodies.

• 한국세라믹학회지
• /
• 제37권3호
• /
• pp.271-279
• /
• 2000

5 m/o Yb-doped SrCeO3 proton conductor was prepared by a solid state reaction method and its total electriccal conductivity measured as a function of both oxygen partial pressure and water vapor partial pressure in the temperature range of 500~100$0^{\circ}C$. From the total conductivity have been deconvoluted the partial conductivities of oxide ions, protons, and holes, respectively, on the basis of the defect model proposed. The equilibrium constant of hydrogen-dissolution reaction, proton concentration, and mobilities of oxygen vacancies and protons have subsequently been evaluated. It is verified that SrCe1-xYbxO3 is a mixed conductor of holes, protons and oxide ions and the proton conduction prevails as temperature decreases and water vapor pressure increases. The heat of water dissolution takes a representative value of $\Delta$HoH=-(140$\pm$20) kJ/mol-H2O, but tends to be less negative with increasing temperature. Migration enthalpies of proton and oxygen vacancy are extracted as 0.83$\pm$0.10 eV and 0.81$\pm$0.01 eV, respectively.

• 대한화학회지
• /
• 제57권6호
• /
• pp.712-720
• /
• 2013

Microwave assisted syntheses of Zn(II), Cd(II) and Hg(II) complexes with 3-aminopyridine (3AP) and nitrite ($NO_2{^-}$) ions have been reported. The metal complexes were characterized by elemental analyses, molar conductance, IR, Far-IR, electronic, NMR ($^1H$, $^{13}C$), thermal and electron impact mass spectral studies. The spectroscopic studies reveal the composition, the nature of nitrite ligand in the complexes, electronic transitions, chemical environments of C and H atoms thermal degradation of the complexes. On the basis of characterization data, distorted tetrahedral geometry is suggested for Zn(II), Cd(II) and Hg(II) complexes. The organic ligand (3AP) and their metal complexes were screened against gram negative pathogenic bacteria and fungi in vitro. The results are compared with our previous report J. Korean Chem. Soc. 2013, 57, 341 on 4-aminopyridine and nitrite ion complexes of the same metal ions.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.94-94
• /
• 2010

Scanning tunneling microscopy (STM) was used to study the electronic structure of cobalt(II) tetraphenylporphyrin (CoTPP) on the Fe/W(110) substrate. Clover-like conformation of CoTPP was observed and showed bias dependent STM images. The central Co(II) ion of this porphyrin was protruded on the positive biases, but it was depressed on the negative biases. On the positive biases, the phenyl rings of CoTPP appeared to be bright contrary to the invisible pyrrole rings. These results were compared the first-principles calculations using GGA and GGA+U to elucidate the influence of the Fe substrate. GGA+U results agreed well with the experimental results; however, GGA did not. These results show that proper treatment of the on-site Coulomb repulsion of the Fe ions is crucial to describe the electronic structure of this system. By the comparison between the GGA+U calculations on the Fe substrate and the gas phase calculations, it can be noted that chemical potential shift occurred accompanying charge transfer from the Fe ions of the substrate to the pyrrole ligand of the porphyrin.

• 대한화학회지
• /
• 제33권2호
• /
• pp.164-167
• /
• 1989

분광광도법을 이용하여 $trans-[Cr(tmd)_2FX]^+(X=F^-,\;Cl^-)$ 착이온의 압력과 온도변화에 따른 수화반응의 속도상수를 구하였다. 속도상수의 변화로부터 열역학적 인자를 구하고 이 값을 이용하여 두 착물의 반응메카니즘을 구하였다. 수화반응의 속도는 온도와 압력이 증가함에 따라 증가하였으며, 이 반응의 활성화엔트로피와 활성화부피는 각각 $trans-[Cr(tmd)_2F_2]^+$착이온의 경우 5.2eu와 $-3∼-2\;cm^3mol^{-1}$ 이고 trans-[Cr(tmd)_2FCl]^+$ 착이온의 경우는 -16.62eu와 $-8∼-7\;cm^3mol^{-1}$ 이었다. 이 값들로 보아 $trans-[Cr(tmd)_2F_2]^+$착이온의 수화반응은 교환회합(Ia) 메카니즘으로 진행되고 $trans-[Cr(tmd)_2FCl]^+$ 착이온의 수화반응은 해리(D) 메카니즘으로 진행되는 것으로 생각된다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.343-344
• /
• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.