• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.996-997
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• 2015

This paper proposes parameter design principle of the sub-module capacitance, Arm inductance and a control method to reduced the circulating currents in modular multilevel converter(MMC) under unbalanced voltage conditions. Under balanced voltage conditions, only negative-sequence circulating currents exist. Consequently, the conventional method has considered only negative-sequence circulating currents in MMC. However, under unbalanced voltage conditions, there are positive-sequence, zero-sequence and negative-sequence circulating currents in MMC. Thus, under unbalanced voltage conditions, a control method should consider these all components. This study proposes the control method to reduced the circulating currents under the unbalanced voltage.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권3호
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• pp.130-140
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• 2001

This paper presents the performance of a parallel active power filter(PT) system in unbalanced load condition. The unbalanced load leads to negative sequence of current, and makes 120Hz ripple in the DC-link voltage forcing large capacitance and increases the rating of APF. thus, the separation of negative sequence is performed in synchronous reference frame and controlled to flow into supply network. The validity of the scheme is investigated through simulation and the experimental results for a prototype active power filter system rated at 10kVA.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -3
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• pp.1878-1881
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• 2002

The capacitance of nonlinear component such as a CMOS inverter varies largely around the threshold voltage. We measured the far-end crosstalk of two parallel microstrip lines with the CMOS inverter load near the threshold voltage of the CMOS inverter, The negative voltage of the crosstalk agrees with that for a 4pF capacitor toad. The positive voltage of the crosstalk hardly changes of the amplitude of the input step voltage.

• 전자공학회논문지
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• 제52권4호
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• pp.88-95
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• 2015

본 논문에서는 부성저항을 생성하는 회로로 알려진 RFNR 회로에 대한 새로운 분석을 소개한다. 새로운 분석에서는 RFNR 회로에 대한 수식분석의 정확성을 높이기 위해 트랜지스터의 게이트 저항과 소스 커패시턴스에 의한 영향을 고려하였다. 기존의 분석에서는 트랜지스터의 소스를 통하여 수식을 분석하였지만 제안된 수식에서는 회로의 공진부인 트랜지스터의 게이트를 통하여 회로를 분석했다. 그 결과, 제안하는 분석은 고주파수에서 기존의 분석보다 정확도를 향상시킬 수 있었다. 본 논문에서는 시뮬레이션을 통해 고주파수에서 분석의 정확도를 검증하였다.

• Journal of electromagnetic engineering and science
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• 제13권3호
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• pp.189-191
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• 2013

This letter presents a compact metamaterial-based tunable zeroth-order resonant antenna. It is based on the double-negative unit cell with a function of tunable inductance realized by a varactor and impedance convertor in the shunt branch. The resonant frequency of the designed antenna ranges from 2.31 to 3.08 GHz, depending on the capacitance of the used varactor. Its size is very compact ($0.05{\lambda}_0{\times}0.2{\lambda}_0$) with a relatively wide tunable range of 29.1%. The impedance bandwidth of the antenna is from 20 to 50 MHz for the resonant center frequency. The measured maximum total realized gain is from -0.68 dBi (2.43 GHz) to 1.69 dBi (2.97 GHz). The EM-simulated and measured results are in good agreement.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.120-123
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• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• 한국임상수의학회지
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• 제18권3호
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• pp.206-210
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• 2001

피부질환에는 보조 치료로 다양한 치료용 샴푸가 빈번하게 적용되고 있으나 이들 샴푸의 피부수분에 미치는 영향은 일반적으로 평가되지 않고 있는 실정이다. 따라서 치료용 샴푸의 정확한 처방을 위해서는 피부의 수분을 측정하기 위한 측정법이 필요하다. 본 연구는 여러 종류의 치료용 샴푸의 피부 수분에 대한 영향을 알아보기 위해 Corneometer를 이용하여 피부에 샴푸를 적용후 수분을 측정하였다. 5두의 건강한 개를 대상으로 7가지 샴푸로 Humilac, Sebocalm, Sebolytics, Etiderm, Benzoyl peroxide, HyLyt, Zn-7 Derm를 선정하여 적용하였다. Humilac의 경우 통계학적으로 유의한 피부수분의 증가는 적용 후 17분(p<0.05), 77분(p<0.01)에 나타났으며, Benzoyl peroxide의 경우 적용 후 77분(p<0.05)에 피부의 수분이 유의하게 감소되었다. 다른 샴푸의 경우 통계학적으로 유의하지 않았으나 전반적으로 감소하는 경향을 보였으며 적용 후 77분에 최초 적용 수치에 근접하게 감소하였다. 어떤 샴푸도 피부에 부작용을 유발하지 않았다. Corneometer는 실제 임상에서 피부의 수분을 평가하는데 간단하고 유용한 측정방법을 사료된다.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.78-81
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• 2013

$0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1284-1287
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• 2005

Peripheral pentacene region gives a significant influence on C-V characteristics of metal-oxide-pentacene capacitor structure. When the gate voltage goes toward negative, the effect of peripheral pentacene region becomes larger. Remaining gate DC bias constant and changing small signal frequency, the capacitance of peripheral pentacene changes along with frequency so that the total capacitance value also changes. The influence of peripheral pentacene region should be removed to measure accurate C-V characteristics, because it is hard to take into account the effect of the region quantitatively. After removing the influence of peripheral pentacene region, acceptor concentration, flat band voltage and depletion width of pentacene thin film are extracted from an accurate C-V curve as $1.58{\times}10^{17}cm^{-3}$, -1.54 V and 39.4 nm, respectively.

• 전력전자학회논문지
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• 제20권6호
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.