• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.347-348
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• 2006

This paper performed the basic study for developing the Photodynamic Therapy Equipment for medical treatment. The equipment have been manufactured by using the High Bright Light Emitting Diode and TLC5941 integrated circuit. As a result, 630nm Light Emitting Diode Module was made for the optimization of irradiation condition. And we confirmed the current change according to increase of the level of Light Emitting Diode Module.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.859-862
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• 2003

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2008.10a
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• pp.133-134
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• 2008

A novel near infrared(NIR) absorbing dyes were synthesized by using bis-aldehyde formyl aromatic compounds and heteroaryl derivatives with the reactive methylene group. These dyes provided a range of the NIR wavelength region about 720 nm value. Also, the light absorbing properties of these dyes were investigated in our experiment results. In generally, these NIR colorants may be potential used for optical recording media, DNA sequencing probe and laser beam printings.

• Current Optics and Photonics
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• v.2 no.4
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• pp.361-367
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• 2018

Ultrafast deep-ultraviolet (DUV) pulse generation from the subwavelength aperture of a plasmonic waveguide was investigated. The plasmonic nanofocusing of near-infrared (NIR) pulses was exploited to enhance DUV photoemission of surface third harmonic generation (STHG) at the amorphous $SiO_2$ dielectric. The generated DUV pulses which are successfully made from a nano-aperture using 10 fs NIR pulses have a spectral bandwidth of 13 nm at a carrier wavelength of 266 nm. This method is applicable for tip-based ultrafast UV laser spectroscopy of nanostructures or biomolecules

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.239-243
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• 2008

In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.4
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• pp.483-489
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• 2007

We have investigated quantitative measurement techniques of the degree of dispersion of single-walled carbon nanotubes (SWNTs). SWNTs were suspended in aqueous media using a sodium dodecyl sulfate (SDS) surfactant. SWNTs with different dispersion states were prepared by controlling the intensity and time of sonication and centrifugation. The laser spectroscopic techniques were employed to characterize the dispersion state; i.e., raman fluorescence and absorption spectroscopic techniques. Raman spectroscopy has been used to probe the dispersion and aggregation state of SWNTs in solution. Individually suspended SWNTs show increased fluorescence peaks and decreased roping peaks at a raman shift 267 $cm^{-1}$ compared with the samples containing bundles of SWNTs. The ultraviolet-visible-near infrared (UV-vis-NIR) absorption spectrum of decanted supernatant samples show sharp van Hove singularity peaks

• Journal of the Optical Society of Korea
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• v.8 no.1
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• pp.1-5
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• 2004

Using the external cavity spectroscopy method, we have observed the saturated absorption spectrum of the P(16) line of the v$_1$+v$_3$ band of $^{13}C$_2$H$_2$$. The frequency of a laser has been stabilized to the saturated absorption spectrum. The relative contrast of the saturation spectrum is about 7% with respect to the linear absorption and the linewidth is about 1.8 MHz. The frequency fluctuation of the stabilized LD is about $\pm$ 20 KHz for a sampling time of 100 ms.

• Electronics and Telecommunications Trends
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• v.36 no.5
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• pp.1-8
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• 2021

Over the last three decades, the development of Ti:sapphire femtosecond lasers has led to advancements in scientific and industrial fields. In particular, these advanced lasers show great potential for applications with bio-imaging and medical surgery, such as two-photon microscopy, nonlinear Raman microscopy, optical coherence tomography, and ophthalmic surgery. Herein, we present a detailed description of the theoretical and experimental physics of Kerr-lens mode-locked femtosecond Ti:sapphire lasers and its two-photon microscopy.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.12-15
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• 2022

In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.28 no.3
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• pp.329-336
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• 2010

This study deals with the measurement of reflectivity as well as the distance accuracy with Terrestrial Laser Scanner(TLS) using time of flight methods and near infrared wave length, for a variety of user-made targets. Especially, point clouds' reflection to several targets was measured with Gretag Macbeth il spectrophotometer in the office. And the distance accuracy in comparison to reference distance for TLS performance evaluation, was tested after scanning the user-made targets and measuring the inter-pillars distances over the precise EDM calibration baseline. The results of test was shown that except white resin objects, with approx. 10m and 170m inter-pillar distances, other targets achieved the distance accuracy of several millimeters(mm) with respect to standard distances. Future work should be concentrate on a few parameters influencing on the distance accuracy such as atmospheric correction, instrument correction, the additive constant or zero/index correction, etc.