• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.137-138
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• 2012

ZnO 박막을 Sol-gel용액을 이용한 스핀코팅 방법으로 석영기판 위에 성장하였고 Sol-gel 용액의 온도 변화에 따른 구조적, 광학적 특성을 분석하였다. ZnO 박막의 구조적, 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible (UV) spectroscopy을 사용하였다. PL 분석에서 ZnO 박막은 orange 계열의 발광을 하였으며, PL spectra는 3.3 eV 부근의 near-band edge emission (NBE) 피크와 2.0 eV 부근의 deep-level emission (DLE) 피크로 이루어져있다. 모든 sol-gel 용액 온도에서, DLE 피크가 NBE 피크보다 더 우세하고 이 DLE 피크는 sol-gel 용액의 온도가 증가함에 따라 점점 증가하다가 감소하는 것을 알 수 있다. 이런 DLE 피크는 산소 공공, 아연 공공, 침입형 산소, 침입형 아연 등과 같은 결함에 의한 것이며, ZnO 박막은 sol-gel 용액의 온도에 따라 결함의 특성이 변화하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.19-22
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• 2002

Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. Transmission electron microscopy (TEM) revealed that the ZnO nanobelts are single crystalline with the growth direction perpendicular to the (010) lattice planes, and that the ZnO nanorods and nanowires are single crystalline with the growth directions perpendicular to the (001) and (110) lattice planes, respectively. In photoluminescence (PL), the peak energy of near band-edge (NBE) emission was determined for nanobelts, nanorods, and nanowires.

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.138-148
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• 1995

A reduced description of the dynamics of carriers in excited semiconductors is presented. Fristly, a time-convolutionless equation of motion for the reduced density operator is derved from the microscopic Liouville wquation operator method. Secondly, the quantum kinetic equations for intercting electron-hole parirs near band-edge in semiconductors under an extermal optical field are obtained from the equation of motion for the reduced density operator. The non-Markovian optical gain of a driven semiconductor is derived including the many-body effects. plasma screening and excitinic effects are taken into account using as effective Hamiltonian in the time-dependent Hartree-Fock approximation. it is shown that the line shape of optical-gain spectra gain is enhanced by the exicitonic effects caused by the attrative electron-hole Coulomb interaction and the interference effects (renormalized memory effects) between the extermal driving filed and the intermal driving Filed and the stochastic reservoir of the system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.2
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• pp.146-154
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• 2002

This paper presents a linearization technique up to the saturation region of power amplifiers. The predistorter gain polynomials which have optimum coefficients are introduced. Power amplifiers are most efficient when operated near the saturation region. Compensating the amplifier nonlinearities with these predistorter gain polynomials, the efficiency of the amplifier can be maximized. Simulation results demonstrate that the adjacent channel power ratio (ACPR) is improves by about 63 ㏈ at the band edge. The convergence and reconvergence characteristics of the linearizer are also satisfactory.

• Electrical & Electronic Materials
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• v.17 no.5
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• pp.13-20
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• 2004

1996년 GaN와 near band edge emission(NBE) 및 yellow deep-defect level emission의 발광 기구가 ZnO의 greene mission과 매우 유사하다는 점이 발견된 이 후［1,2］, II-VIZnO반도체에 대한 광학적 성질에 많은 관심이 집중되기 시작하였다. 1960년대 C. Klingshirin［3］에 의해 bulk ZnO의 exciton luminescence가 관측된 이래로, 1980년대 후반부터 적층 박막 성장 법들이 급속도로 발전을 하여 오고 1988 S. Bethke등이 CVD로 성장한 ZnO의 NBE emission에 관심을 갖기 시작하였고［4］, 1996년 2K에서 GaN, ZnO사이의 유사한 발광기구가 알려졌고［5］, 도호쿠 및 일본 공업대에서 ZnO의 적층 성장 및 상온에서 defect에 기인한 emission이 없는 깨끗한 PL 의 관측, 상온 lasing, 육방정계 결정 구조에서 비롯된 6-fold symmetry PL 등이 보고되기 시작하였다. ［6-8］ 2000년에 들어서면서 MgO와 CdO와의 solid solution에 의한 밴드갭을 2.6-4.2 eV 까지 조절하는 가능성이 보고되었고 이를 이용한 ZnO/MgZnO MQW 구조에 대한 연구도 병행되었다.(중략)

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.473-476
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• 1987

Low temperature phosphorus-nitride CVD was newly developed for a high quality gate insulator on InP substrate. This film showed the Poole-Frenkel type conduction in high electric field with resistivity higher than $1{\times}10^{14}$ ohm-cm near the electric field of $1{\times}10^7\;volt/cm$. The C-V hysteresis width was very small as 0.17 volt. The density of interface trap states was $2{\times}10^{11}cm^{-2}ev^{-1}$ below the conduction band edge of InP substrate. Effective electron mobility was about $1200-1500\;cm^2/Vsec$ and showed the instability of PN-InP MISFETs drain current reduced less than 10 percent for the period $0.5-10^3sec$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.97-98
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• 2002

$Ga_2O_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about $10{\sim}200nm$ width and $10{\sim}50nm$ thickness. Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. In cathodoluminescence(CL), the peak energy of near band-edge(NBE) emission was determined for nanobelts, nanorods, and nanowires.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.57-57
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• 2010

Self assembled $Zn_{x-1}Cd_xS$ nanowires, synthesized on a Indium tin oxide coated glass substrate with low composition of Cd as x=0.09, were fabricated non-precursor via a co-evaporation method using of solid sources of CdS and ZnS. We studies that ZnCdS nanowires are dislocation-free and the single crystalline hexagonal wurtzite structure showed by transmission electron microscopy and selected area electron diffraction pattern. Cathode luminescence spectra showed an near band edge peak at 383nm originated from nanowires at 80K and 300K. Core level spectra of the Cd 3d, Zn 2p and S 2p in the ZnCdS nanorods were obtained by x-ray photoelectron spectroscopy. Prepared ZnCdS nanorods showed different shape with increase of substrate temperature at the growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.374-374
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• 2010

Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.233-236
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• 2012

ZnO nanowires were fabricated through thermal evaporation of Zn or ZnS powder using solar energy. The Zn or ZnS powder was heated and evaporated by sunlight. The sunlight was concentrated on the Zn or ZnS powder by a converging lens and then the Zn or ZnS powder was evaporated and oxidized in air. After oxidation, ZnO nanowires were fabricated in the focal point. Strong ultraviolet emission, which corresponds to the near band-edge emission, was observed from the ZnO nanowires synthesized using Zn powder as a source material. Meanwhile, green emission, related to intrinsic defects such as oxygen vacancies, prevailed for the ZnO nanowires fabricated using ZnS powder. No catalysts were used in the fabrication of the ZnO nanowires, which suggested the ZnO nanowires were grown by a vapor-solid mechanism.