• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.11-14
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• 2009

Yb and Zn co-doped $LiNbO_3$ single crystal rods which had a diameter of 2 mm and a length of $15{\sim}25 mm$ were grown by micro-pulling down (${\mu}-PD$) method. The single crystals were successfully grown and had a uniform diameter and a smooth surface without crack. We realized of $LiNbO_3$ single crystals were hexagonal structure to compare with peaks of $LiNbO_3$ powder by Raman spectra. The threshold level of Zn concentration which is effective for optical damage were observed as about 1 mol% with IR transmission spectra.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.141-141
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• 1994

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.6
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• pp.466-474
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• 2021

[011] poled ternary Pb(In_1/2Nb_1/2)O₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PIN-PMN-PT) single crystals have been investigated for active materials for acoustic transducers because of their high piezoelectric properties in both shear and transverse modes. In order to use [011] poled PIN-PMN-PT single crystals for acoustic transducers, the characterization of full-matrix material properties is required. In this study, full sets of compliance, dielectric, and piezoelectric constants of [011] poled rhombohedral PIN-PMN-PT were measured by a resonance method. Dimensions and geometries of 12 samples were proposed for measuring 17 independent material constants of [011] poled rhombohedral PIN-PMN-PT single crystals. Two sets of samples with different PT concentrations, 0.24PIN-0.49PMN-0.27PT and 0.24PIN-0.46PMN-0.30PT, were fabricated and their material properties were measured. Measured impedance spectra and simulated impedance spectra of the samples were compared to check the accuracy of the measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.371-374
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• 2004

저온동시 소성용(low temperature co-fired ceramics, LTCC) 마이크로파 유전체을 만들기 위해 $Ca(Li_{1/4}Nb_{3/4})O_3$ 마이크로파 유전체 세라믹스에 zinc-borosililcate glass를 첨가하여 소결 특성과 마이크로파 유전 특성을 조사하였다. $Ca(Li_{1/4}Nb_{3/4})O_3$과 $0.7Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$에 zinc-borosilicate를 $5{\sim}30wt%$ 첨가하여 소결한 결과 $875{\sim}925^{\circ}C$에서 동시 소성이 가능한 것으로 확인되었으며 zinc-borosilicate glass의 함량이 증가할수록 저온에서 소성이 가능하였지만 과량의 액상과 2차상이 형성되면서 유전율과 품질계수가 저하되는 경향을 나타내었다. $Ca(Li_{1/4}Nb_{3/4})O_3$에 5wt%의 zinc-borosilicate를 첨가하여 $900^{\circ}C$에서 소성한 결과 가장 우수한 유전 특성$(\epsilon_r=17.45,\;Q{\times}f_0=5487)$을 나타내었고, 유전율을 높이기 위해 $CaTiO_3$를 0.3mol% 첨가한 $0.7Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$에 10wt%의 zinc-borosilicate를 첨가하여 $925^{\circ}C$에서 소성한 결과 가장 우수한 유전특성$(\epsilon_r=44.92,\;Q{\times}f_0=5567)$을 나타내었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.64-71
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• 2000

An optical switch composed of identical, equally-spaced $Ti:LiNbO_3$ three-waveguides was designed and fabricated. Patterned Ti was diffused into z-cut $LiNbO_3$ substrates. $SiO_2$ buffer layer was evaporated to reduce the propagation loss of TM mode, and Al electrodes of CPW structure were built on the layer for switching of the guided beam. The optical switching phenomenon was confirmed when a beam of ${\lambda}=1.3{\mu}m$ was launched into the center waveguide and an electric field was applied to detune the three waveguides symmetrically.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.372-376
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• 1998

We developed a pulsed laser deposition(PLD) apparatus for depositing various thin films. In this study, the formation of $NbS_2$ thin film was performed in the vacuum chamber by PLD method. $Al_2O_3$(012) and Si(111) were used as the substrates. In order to investigate the growth conditions of a high crystalline $NbS_2$ thin film, the S/Nb composition ratio was varied from 2.0 to 5.25 and the substrate temperature was varied from the room temperature to $600^{\circ}C$. From the result of X-ray diffraction studies of the prepared $NbS_2$ thin films, it was reported that the $NbS_2$, thin film showed a good crystallinity at substrate temperature $600^{\circ}C$ and with S/Nb composition ratio 4.0 on $Al_2O_3$(012) but did not on Si(111). The films exhibited c-axis orientation.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.839-845
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• 1995

The structural and dielectric properties of Pb(Mg1/3Nb2/3)O3 ceramics substituted by Nd3+, La3+, K+ and Na+ were studied over 0~50 at.% substituent content. The 1 : 1 ordering behavior of Mg2+ and Nb5+ ions in the B site sublattice was observed in Nd3+-and La3+-modified compounds. The degree of ordering was increased with Nd3+, La3+ content in the compounds. But K+-or Na+-modified compounds did not exhibit the ordering behavior. This was explained by charge and size effect of A and B site cations and oxygen vacancies. As the mole fractions of substituent increased, the maximum values of dielectric constants were rapidly decreased and the phase transitions were broadened. Phase transition temperature was correlated with the covalency of A-O and B-O bonding.

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.339-344
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• 2017

A series of $CaNb_2O_6:Dy^{3+}$, $CaNb_2O_6$:$Eu^{3+}$ and $CaNb_2O_6:Dy^{3+}$, $Eu^{3+}$ phosphors were prepared by solid-state reaction process. The effects of activator ions on the structural, morphological and optical properties of the phosphor particles were investigated. XRD patterns showed that all the phosphors had an orthorhombic system with a main (131) diffraction peak. For the $Dy^{3+}$-doped $CaNb_2O_6$ phosphor powders, the excitation spectra consisted of one broad band centered at 267 nm in the range of 210-310 nm and three weak peaks; the main emission band showed an intense yellow band at 575 nm that corresponded to the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ ions. For the $Eu^{3+}$-doped $CaNb_2O_6$ phosphor, the emission spectra under ultraviolet excitation at 263 nm exhibited one strong reddish-orange band centered at 612 nm and four weak bands at 536, 593, 650, and 705 nm. For the $Dy^{3+}$ and $Eu^{3+}$-codoped $CaNb_2O_6$ phosphor powders, blue and yellow emission bands due to the $^4F_{9/2}{\rightarrow}^6H_{15/2}$ and $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transitions of $Dy^{3+}$ ions and a main reddish-orange emission line at 612 nm resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ ions were observed. As the concentration of $Eu^{3+}$ ions increased from 1 mol% to 10 mol%, the intensities of the emissions due to $Dy^{3+}$ ions rapidly decreased, while those of the emission bands originating from the $Eu^{3+}$ ions gradually increased, reached maxima at 10 mol%, and then slightly decreased at 15 mol% of $Eu^{3+}$. These results indicate that white light emission can be achieved by modulating the concentrations of the $Eu^{3+}$ ions incorporated into the $Dy^{3+}$-doped $CaNb_2O_6$ host lattice.