• Journal of Astronomy and Space Sciences
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• 제21권4호
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• pp.481-492
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• 2004

Nb/Al Superconducting Tunnel Junction(STJ) 소자를 제작하여 I-V 특성곡선을 측정하고 제작된 STJ 소자의 초전도체 특성 및 성능 파라미터 값들을 구하였다. 크기가 각각 20, 40, 60, 그리고 $80{\mu}m$인 4종류의 STJ소자를 제작하였으며 각 소자는 총 5층의 Nb/A1/AlOx/Al/Nb 다결정(polycrystalline) 박막으로 구성된 SIS(Superconductor Insulate. Superconductor) 방식의 조셉슨 접합 구조를 갖는다. 이 연구에서 제작한 STJ 소자는 $Tanner^{TM}$ L-Edit 8.3 프로그램으로 설계하였으며 한국표준과학연구원의 SQUID 제조실험실에서 제작하였다. 5층의 STJ 박막은 DC magnetron sputtering, reactive ion etching, CVD(Chemical Vapor Deposition) 장비를 이용해 생성되었다. 제작된 STJ 소자는 액체헬륨으로 냉각(4K)시킨 후 I-V 특성곡선을 측정하여 초전도 특성을 확인하였고, STJ 소자의 성능을 결정하는 파라미터인 energy gap, normal resistance, normal resistivity, dynamic resistance, dynamic resistivity, 그리고 quality factor를 계산하였다. Nb/Al STJ 소자의 FWHM 에너지 분해능 계산 결과, 순수 Nb STJ 소자보다 $11\%$ 우수한 에너지 분해능 특성을 확인하였다.

• Progress in Superconductivity
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• 제12권2호
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• pp.110-113
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• 2011

We have grown a Nb/Gd bilayer on a$SiO_2$/Si substrate by using a DC magnetron sputtering system, which was fabricated in situ with silicon stencil masks. In order to investigate proximity effect of the Nb/Gd bilayer, we used a planar tunnel junction with an AlOx tunnel barrier by oxidizing the Al ground electrode at the bottom. A $Co_{60}Fe_{40}$ backing of Al was deposited so as to reduce the superconductivity of the Al, ensuring a normal counterelectrode. With a 50-nm-thick Nb layer, we have measured dI/dV (dynamic conductance) by varying the thickness of Gd, which can reveal the density of states (DOS) of the Nb/Gd bilayer as a function of the Gd thickness resulting from the proximity effect of a superconductor/ferromagnet bilayer (S/F). The SF proximity effect in Nb/Gd will be discussed in comparison to our previous results of the CoFe/Nb, Ni/Nb and CuNi/Nb proximity effect; Gd is expected to show different effects since Gd has f-electrons, while CoFe, Ni, and CuNi have only d-electrons. Our studies will focus on the triplet correlation in a superconducting pair.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.103-105
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• 2003

The high speed of RSFQ circuits is based on the self-resetting in the overdamped Josephson junctions. The SIS technology using Nb/A1$_2$O$_3$/Nb trilayer has been successfully adopted as a standard technology. However the newly suggested SINIS technology attracts interest because the junction itself is overdamped without any external shunt, and provides possibility of simplification of RSFQ circuit design and fabrication. In this paper we demonstrate RSFQ circuit fabrication process using SINIS technology.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2008년도 한국우주과학회보 제17권2호
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• pp.37.3-37.3
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• 2008

STJ(Superconducting Tunnel Junction) technique offers next generation photon detectors exhibiting high energy resolution, high quantum efficiency and photon counting ability over the broad wavelength range from X-ray to NIR. We report the succcess in fabrication of Ta/Al-AlOx-Al/Ta and Nb/Al-AlOx-Al/Nb micro structure deposited on sapphire substrates using various techniques including UV photolithography, DC Sputtering, RIE, and PECVD technique. The characterization experiment was undertaken in an Adiabatic Demagnetization Refrigerator at an operating temperature below 50mK. The details of experimental investigations for electrical characterization of STJ of $20\sim80{\mu}m$ in side-lengths are discussed. The measured I-V curves were used to derive The detector performance indicators such as energy gap, energy resolution, normal resistance, normal resistivity, dynamic resistance, dynamic resistivity, and quality factor.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.143-145
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• 2003

External shunt resistor is used in Nb/AlOx/Nb Josephson junction which is basic component of RSFQ circuit. This is to increase damping and to make the so called 'self-reset' optimized for high speed operation. In this study, we fabricated and investigated sheet resistance of Pd and PdAu thin film, and simulated the inductance effect of the shunt resistor to the Josepshon junction dynamics.

• 전자공학회논문지A
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• 제30A권10호
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• pp.12-19
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• 1993

Because of their high sensitivity and moderate bandwidth, superconducting receivers with SIS (Superconductor Insulator Superconductor) tunnel junction mixer are now widely used for millimeter wave radio astronomy. In this paper we have introduced how to determine the parameters of SIS tunnel junction which have to be optimized to achieve a good mixer performance. From these results of optimized junction parameters determined by this methods, SIS junctions which consist of a series array of four Nb/Al-AlOx/Nb junctions with each area 3.4${\mu}m^{2}$ have been fabricated by SNEP (Selective Niobium Etching Process) and RIE (Reactive Ion Eching). Also we have tested their DC current-voltage characteristics. These SIS junctions will be used as a mixer for 100GHz band cosmic waves receiver.

• 전자공학회논문지A
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• 제33A권6호
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• pp.90-98
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• 1996

We have evaluated the theoretical conversion loss and noise temperature of mixer using the quantum mixer theory and the method to determine the embedding impedance of waveguide-type mixer mount. At fixed backshort position of the mixer, the calculated SSB mixer conversion loss and mixer noise temperature are 5 dB and 10K within frequency range form 85 GHz to 115 GHz, respectively. The SIS mixer has been developed by using through on the calculated rsutls to observe cosmic radio waves. SIS junction of mixer is Nb/Al-AlOx/Nb and it consists of four series array. Area of each of junction is about 2.5${\mu}m^{2}$. The average receiver noise temperature of manufactured receiver with this mixer is about 30 K(DSB). The receiver noise temperature is much lower than that of receiver with a mixer using mechanical tuning backshort.

• 한국초전도ㆍ저온공학회논문지
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• 제5권1호
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• pp.21-26
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• 2003

We designed and constructed a multichannel superconducting quantum interference device (SQUID) magnetometer system to measure magnetic fields from the human brain. We used a new type of SQUID, the double relaxation oscillation SQUID (DROS). With high flux-to-voltage transfers of the DROS, about 10 times larger than the dc SQUIDs, simple flux-locked loop circuits could be used for SQUID operation. Also the large modulation voltage of the DROS, typically being 100 $mutextrm{V}$, enabled stable flux-locked loop operation against the thermal offset voltage drift of the preamplifier. The magnetometers were fabricated using the Nb/AlOx/Nb junction technology. The SQUID system consists of 37 signal magnetometers, distributed on a semispherical surface, and 11 reference channels were installed to pickup background noises. External feedback was used to eliminate the magnetic coupling with the adjacent channels. The liquid helium dewar has a capacity of 29 L and boil-off rate of about 4 L/d with the total 48 channel insert. The magnetometer system has an average noise level of 3 fT/√Hz at 100 Hz, inside a shielded loon, and was applied to measure auditory-evoked fields.

• Progress in Superconductivity
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• 제14권2호
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• pp.99-101
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• 2012

Fluorescent yield X-ray absorption fine structure (XAFS) spectroscopy is useful for analyzing local structure of specific elements in matrices. We developed an XAFS apparatus with a 100-pixel superconducting tunnel junction (STJ) detector array with a high sensitivity and a high resolution for light-element dopants in wide-gap semiconductors. An STJ detector has a pixel size of $100{\mu}m$ square, and an asymmetric layer structure of Nb(300 nm)-Al(70 nm)/AlOx/Al(70 nm)-Nb(50 nm). The 100-pixel STJ array has an effective area of $1mm^2$. The XAFS apparatus with the STJ array detector was installed in BL-11A of High Energy Accelerator Research Organization, Photon Factory (KEK PF). Fluorescent X-ray spectrum for boron nitride showed that the average energy resolution of the 100-pixels is 12 eV in full width half maximum for the N-K line, and The C-K and N-K lines are separated without peak tail overlap. We analyzed the N dopant atoms implanted into 4H-SiC substrates at a dose of 300 ppm in a 200 nm-thick surface layer. From a comparison between measured X-ray Absorption Near Edge Structure (XANES) spectra and ab initio FEFF calculations, it has been revealed that the N atoms substitute for the C site of the SiC lattice.

• 한국결정성장학회지
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• 제18권1호
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• pp.5-9
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• 2008

코디어라이트는 낮은 열팽창계수를 가지나, 디젤 배기가스 담체로써 사용하기에는 기계적 강도가 낮고, 황에 대한 내산성이 취약한 문제를 가지고 있다. 본 연구에서는 $SiO_2,\;Al_2O_3$, MoOx, $Cr_2O_3$ 및 $Nb_2O_5$가 첨가된 $ZrTiO_4$의 물성을 XRD, SEM, UTM 및 열팽창계수 측정 장치를 사용하여 측정하고 분석하였다. $ZrTiO_4$은 $TiO_2$와 $ZrO_2$를 출발원료로 볼빌에서 혼합한 후 $1240^{\circ}C$ 이상의 온도에서 3시간 하소함으로써 monoclinic 구조로 합성되었다. 꺽임강도 및 열팽창계수 측정용 시편은 $ZrTiO_4$와 첨가제를 혼합 성형하고, $1300^{\circ}C$에서 3 시간 소성함으로써 얻어졌다. 소결된 시편의 기공율은 첨가제의 함량이 5%로 증가함에 따라 첨가제의 종류에 관계없이 감소하였으나, 첨가제의 함량이 10% 로 증가하면 기공율은 포화되었다. 꺾임강도는 $Al_2O_3$를 5, 10 wt% 첨가 시 큰 폭으로 증가하였으나, 나머지 첨가제에 대해서는 꺾임강도가 감소하였다. $ZrTiO_4$의 열팽창계수 $(1000^{\circ}C)$는 $Nb_2O_5$를 제외하고는 첨가제가 증가할수록 계속적으로 감소하였으며, 특히, $SiO_2$가 첨가된 경우 가장 낮은 열팽창계수를 나타내었다.