• Title/Summary/Keyword: Nb/A1O$_{}$ x//Nb Josephson junction

Search Result 3, Processing Time 0.015 seconds

Determination of Penetration Depth of Nb Electrodes in $Nb/A1O_x/Nb$ Josephson Junction by Resistive Method ($Nb/A1O_x/Nb$ 조셉슨 접합에서 저항측정을 이용한 Nb 전극의 침투깊이 측정)

  • 김동호;김규태;박종원;황준석;홍현권
    • Progress in Superconductivity and Cryogenics
    • /
    • v.4 no.1
    • /
    • pp.50-54
    • /
    • 2002
  • Penetration depth of Nb electrodes in $Nb/A1O_x/Nb$ Josephson junctions has been measured by resistive method. For a given applied field, the total flux through the junction is temperature dependent because the penetration depth of Nb electrode varies with temperature. If the total flux equals an integral multiple of the flux quantum at certain temperatures, resistive peaks appear at those temperatures. The penetration depth of Nb can be determined by applying the above condition, The temperature dependence of penetration depth was found to be well described by the two-fluid model.

Simulation and Operation of DC/SFQ-JTL-SFQ/DC Circuit (DC/SFQ-JTL-SFQ/DC 회로의 시뮬레이션 및 작동)

  • 박종혁;정구락;임해용;강준희;한택상
    • Progress in Superconductivity and Cryogenics
    • /
    • v.4 no.1
    • /
    • pp.17-20
    • /
    • 2002
  • A complex single flux quantum(SFQ) circuit could be made up of various elementary cells such as JTL(Josephson transmission line), Splitter, XOR, DC/SFQ, SFQ/DC, T flip-flop, ‥‥, etc. In this work, we have designed and simulated a SFQ circuit, which consists of DC/SFQ, JTL and SFQ/DC, based on Nb/AlO$_{x}$Nb Josephson junction technology From the simulation, we could obtain the margins for various circuit parameters. And also we have successfully operated the circuit, which was fabricated with the same design, up to the input signal frequency of about 20 GHz.z.

Electrical Characteristics of $Nb/Al-AlO_x/Nb$ Tunnel Junction fabricated with $I_c$ Values in the Range of $28 A/cm^2~ 940 A/cm^2$ ($28 A/cm^2~ 940 A/cm^2$의 임계전류밀도 범위로 제작된 $Nb/Al-AlO_x/Nb$ 터널접합의 전기적 특성)

  • 홍현권;김규태;박세일;김구현;남두우
    • Progress in Superconductivity and Cryogenics
    • /
    • v.4 no.1
    • /
    • pp.4-7
    • /
    • 2002
  • Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.