• Journal of the Korean Society for Precision Engineering
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• v.21 no.12
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• pp.160-166
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• 2004

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated fer applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecule and bio molecule. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance of Self-Assembled Monolayers in selective etching of thin metal film. In this report, we present the several machining method to form the nanoscale structure by Mask-Less laser patterning using alknanethiolate Self-Assembled Monolayers such as thin metal film etching and heterogeneous SAMs structure formation.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1517_1518
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• 2009

Interest has grown recently in the concept of "unconventional nanofabrication", the creation of nanoscale features by methods that avoid the technical hurdles and high cost of nano-lithographic processes. One of the challenges has been to reliably and inexpensively produce channels of nanometer dimension, as small as 60 nm, in the materials commonly used for soft lithography. In this manuscript, we present new approaches based on simple concepts of wrinkle and buckling patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.600-600
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• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.199-202
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.262.2-262.2
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• 2014

Plasma processing is an essential process for pattern etching and thin film deposition in nanoscale semiconductor device fabrication. It is necessary to maintain plasma chamber in steady-state in production. In this study, we determined plasma chamber state with residual gas analysis with self-plasma optical emission spectroscopy. Residual gas monitoring of fluorocarbon plasma etching chamber was performed with self-plasma optical emission spectroscopy (SPOES) and various chemical elements was identified with a SPOES system which is composed of small inductive coupled plasma chamber for glow discharge and optical emission spectroscopy monitoring system for measuring optical emission. This work demonstrates that chamber state can be monitored with SPOES and this technique can potentially help maintenance in production lines.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.289-289
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• 2011

The conducting polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Terephthalaldehyde (TPA) and p-phenylenediamine (PD) were used as monomers to deposit conducting polymer. Self-terminating nature of TPA and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of conducting polymer thin films. Layer by layer growth and polymerization of thin films can be showed by shifting of absorption edge using UV-VIS spectroscopy. This conducting polymer fabricated by using MLD method gives the opportunity to develop new hybrid materials by combining inorganic materials in nanoscale.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.22-23
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• 2011

As device dimensions shrink, it is increasingly important to develop fabrication methods that can create sub-15 nm features of regular or arbitrary geometry in a rapid, parallel, and efficient process. This talk will discuss approaches based on self-assembling hybrid polymers containing Si. The thin films of those materials systems can generate well-ordered periodic arrays of dots or lines. For achieving, long-range ordering, it is helpful to use lithographically-defined templates, which are in general much larger than the length-scale of self-assembled nanostructures. For example, the self-assembly of polymer nanostructures can easily be templated using an array of nanoscale topographical elements that act as guiding templates or surrogates for one of two microdomains. The solvent-vapor-induced tunability of pattern dimension and morphology will be discussed as well. Those material systems can excellently serve for high-precision self-assembly that can provide good resolution, reliability, and controllability and be considered as an option for a future nanomanufacturing technology.

• Journal of Semiconductor Engineering
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• v.1 no.1
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• pp.46-56
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• 2020

This article highlights new opportunities of inorganic semiconductor materials for bio-implantable electronics, as a subset of 'transient' technology defined by an ability to physically dissolve, chemically degrade, or disintegrate in a controlled manner. Concepts of foundational materials for this area of technology with historical background start with the dissolution chemistry and reaction kinetics associated with hydrolysis of nanoscale silicon surface as a function of temperature and pH level. The following section covers biocompatibility of silicon, including related other semiconductor materials. Recent transient demonstrations of components and device levels for bioresorbable implantation enable the future direction of the transient electronics, as temporary implanters and other medical devices that provide important diagnosis and precisely personalized therapies. A final section outlines recent bioresorbable applications for sensing various biophysical parameters, monitoring electrophysiological activities, and delivering therapeutic signals in a programmed manner.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.12-19
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• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.