• Title/Summary/Keyword: Nanoscale dot

Search Result 21, Processing Time 0.026 seconds

Single-bit digital comparator circuit design using quantum-dot cellular automata nanotechnology

  • Vijay Kumar Sharma
    • ETRI Journal
    • /
    • v.45 no.3
    • /
    • pp.534-542
    • /
    • 2023
  • The large amount of secondary effects in complementary metal-oxide-semiconductor technology limits its application in the ultra-nanoscale region. Circuit designers explore a new technology for the ultra-nanoscale region, which is the quantum-dot cellular automata (QCA). Low-energy dissipation, high speed, and area efficiency are the key features of the QCA technology. This research proposes a novel, low-complexity, QCA-based one-bit digital comparator circuit for the ultra-nanoscale region. The performance of the proposed comparator circuit is presented in detail in this paper and compared with that of existing designs. The proposed QCA structure for the comparator circuit only consists of 19 QCA cells with two clock phases. QCA Designer-E and QCA Pro tools are applied to estimate the total energy dissipation. The proposed comparator saves 24.00% QCA cells, 25.00% cell area, 37.50% layout cost, and 78.11% energy dissipation compared with the best reported similar design.

Design of a 94-GHz Single Balanced Mixer Using Planar Schottky Diodes with a Nano-Dot Structure on a GaAs Substrate

  • Uhm, Won-Young;Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of information and communication convergence engineering
    • /
    • v.14 no.1
    • /
    • pp.35-39
    • /
    • 2016
  • In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

Optimized QCA SRAM cell and array in nanoscale based on multiplexer with energy and cost analysis

  • Moein Kianpour;Reza Sabbaghi-Nadooshan;Majid Mohammadi;Behzad Ebrahimi
    • Advances in nano research
    • /
    • v.15 no.6
    • /
    • pp.521-531
    • /
    • 2023
  • Quantum-dot cellular automata (QCA) has shown great potential in the nanoscale regime as a replacement for CMOS technology. This work presents a specific approach to static random-access memory (SRAM) cell based on 2:1 multiplexer, 4-bit SRAM array, and 32-bit SRAM array in QCA. By utilizing the proposed SRAM array, a single-layer 16×32-bit SRAM with the read/write capability is presented using an optimized signal distribution network (SDN) crossover technique. In the present study, an extremely-optimized 2:1 multiplexer is proposed, which is used to implement an extremely-optimized SRAM cell. The results of simulation show the superiority of the proposed 2:1 multiplexer and SRAM cell. This study also provides a more efficient and accurate method for calculating QCA costs. The proposed extremely-optimized SRAM cell and SRAM arrays are advantageous in terms of complexity, delay, area, and QCA cost parameters in comparison with previous designs in QCA, CMOS, and FinFET technologies. Moreover, compared to previous designs in QCA and FinFET technologies, the proposed structure saves total energy consisting of overall energy consumption, switching energy dissipation, and leakage energy dissipation. The energy and structural analyses of the proposed scheme are performed in QCAPro and QCADesigner 2.0.3 tools. According to the simulation results and comparison with previous high-quality studies based on QCA and FinFET design approaches, the proposed SRAM reduces the overall energy consumption by 25%, occupies 33% smaller area, and requires 15% fewer cells. Moreover, the QCA cost is reduced by 35% compared to outstanding designs in the literature.

Understanding Diffusion in Cells and Living Tissues (세포 및 생체조직에서 확산에 관한 이해)

  • Kim, Jung-Kyung
    • Journal of the Korean Society of Visualization
    • /
    • v.5 no.1
    • /
    • pp.12-15
    • /
    • 2007
  • Macromolecule diffusion in cells and tissues is important for cell signaling, metabolism and locomotion. Biophysical methods, including non-invasive or minimally invasive in-vivo photobleaching techniques and single quantum-dot tracking, have been used to measure the rates of macromolecule diffusion in living cells and tissues, including central nervous system and tumors. Mathematical modeling and statistical analysis of experimental data revealed various modes of diffusion, which are strongly coupled with spatiotemporal changes in nanoscale structures and material properties.

Memristive Devices Based on RGO Nano-sheet Nanocomposites with an Embedded GQD Layer (저결함 그래핀 양자점 구조를 갖는 RGO 나노 복합체 기반의 저항성 메모리 특성)

  • Kim, Yongwoo;Hwang, Sung Won
    • Journal of the Semiconductor & Display Technology
    • /
    • v.20 no.1
    • /
    • pp.54-58
    • /
    • 2021
  • The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.