• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.286-286
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• 2010

The lack of homogeneously sized single-walled carbon nanotubes (SWNTs) hinders their many applications because properties of SWNTs, in particular electrical conduction, are highly dependent on the diameter and chirality. Therefore, the preferential growth of SWNTs with predetermined diameters is an ultimate objective for applications of SWNTs-based nanoelectronics. It has been previously emphasized that a catalyst size is the one crucial factor to determine the CNTs diameter in chemical vapor deposition (CVD) process, giving rise to several attempts to obtain size-controllable catalyst by diverse methods, such as solid supported catalyst, metal-containing molecular nanoclusters, and nanostructured catalytic layer. In this work, diameter-controlled CNTs were synthesized using a nanostructured catalytic layer consisting of Fe/Al2O3/Si substrate. The CNTs diameter was controlled by structural modification of Al2O3 supporting layer, because Al2O3 supporting layer can affect agglomeration phenomenon induced by heat-driven surface diffusion of Fe catalytic nanoparticles at growth temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• Journal of electromagnetic engineering and science
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• v.11 no.4
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• pp.304-310
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• 2011

The application of time-domain methods in emission measurement instruments allows for a reduction in scan time by several orders of magnitude and for new evaluation methods to be realized such as the real-time spectrogram to characterize transient emissions. In this paper two novel systems for time-domain EMI measurements above 1 GHz are presented. The first system combines ultra-fast analog-to-digital-conversion and real-time digital signal processing on a field-programmable-gate-array (FPGA) with ultra-broadband multi-stage down-conversion to enable measurements in the range from 10 Hz to 26 GHz with high sensitivity and full-compliance with the requirements of CISPR 16-1-1. The required IF bandwidths were added to allow for measurements according to MIL-461F and DO-160F. The second system realizes a system of time-interleaved analog-to-digital converters (ADCs) and has an upper bandwidth limit of 4 GHz. With the implementation of an automatic mismatch calibration, the system fulfills CISPR 16-1-1 dynamic range requirements. Measurements of the radiated emissions of electronic consumer devices and household appliances like the non-stationary emissions of a microwave oven are presented. A measurement of a personal computer's conducted emissions on a power supply line according to DO-160F is given.

• Journal of Energy Engineering
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• v.25 no.2
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• pp.65-78
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• 2016

Initial studies of the photocatalyst has been developed from the field relating to the conversion and storage of solar energy. Recently, the study of the various organic decomposition compound and the water purification and waste water treatment by ultraviolet irradiation in the presence of light or a photocatalyst are being actively investigated. In addition, the oxidized material-carbon nanotubes, graphene-nanocomposites have been studied. Such a complex is suitable as a material constituting the solar cells and photolysis nanoelectronics, including the flexible element due to thermal and chemical stability.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.1
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• pp.26-32
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• 2008

We report on the ferromagnetic characteristics of $Zn_{1-x}Mn_xO$ films (x = 0.3) prepared by sol-gel method on the silicon and (0001) ${\alpha}-Al_2O_3$ substrates at the annealing temperature of 700$^{\circ}C$. Magnetic measurements show that Curie temperature ($T_C$) and the coercive field ($H_C$) for the film on the silicon are about 32 K and about 275 Oe, while those for that on the sapphire are about 32 K and 425 Oe, respectively. Energy dispersive spectroscopy and transmission electron microscopy measurements suggest that ferromagnetic precipitates originated by manganese oxide compound formed at the interfaces of the both substrates may be responsible for the observed ferromagnetic behavior of the films. Electron paramagnetic resonance study of the powders up to the concentration of x=0.15 supports the result.

• Journal of the Korean institute of surface engineering
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• v.52 no.1
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• pp.6-15
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• 2019

Metal-halide perovskite (MHP) solar cell is a promising candidate for next-generation flexible devices and the BIPV (Building-integrated photovoltaics) because it can exhibit high power conversion efficiencies over 23%, good bendability and low processing cost. However, MHP solar cells are commonly fabricated by the spin coating that is not a reliable method to produce large-scale commercial solar cells. A shear coating can be one of the potential candidates for the large-scale deposition method of MHP films. In this work, the influences of the process parameters such as solvents of precursor solution, substrate temperature, concentrations of precursor solution, and annealing time on the thin film growth of MHP were investigated for the shear coating process. This study presents the possibility of the shear coating process for large-scaled perovskite film fabrication and reveals the role of process condition in the thin film growth of perovskites.

• Advances in nano research
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• v.10 no.4
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• pp.339-347
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• 2021

In the framework of the density functional theory combined with the method of non-equilibrium Green functions (DFT + NEGF), the electric transport properties of a one-dimensional nanodevice consisting of telescoping polyprismanes with various types of electrical conductivity were studied. Its transmission spectra, density of state, current-voltage characteristic, and differential conductivity are determined. It was shown that C_[14,17], C_[14,11], C_[14,16], C_[14,10] show a metallic nature, and polyprismanes C_[14,5], C_[14,4] possess semiconductor properties and has a band gap of 0.4 eV and 0.6 eV, respectively. It was found that, when metal C_[14,11], C_[14,10] and semiconductor C_[14,5], C_[14,4] polyprismanes are coaxially connected, a Schottky barrier is formed and a weak diode effect is observed, i.e., manifested valve (rectifying) property of telescoping polyprismanes. The enhancement of this effect occurs in the nanodevices C_[14,17] - C_[14,11] - C_[14,5] and C_[14,16] - C_[14,10] - C_[14,4], which have the properties of nanodiode and back nanodiode, respectively. The simulation results can be useful in creating promising active one-dimensional elements of nanoelectronics.

• Advances in nano research
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• v.10 no.5
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• pp.471-479
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• 2021

In the framework of the density functional theory combined with the method of non-equilibrium Green functions (DFT + NEGF), the electric transport properties of a one-dimensional nanodevice consisting of telescoping polyprismanes with various types of electrical conductivity were studied. Its transmission spectra, density of state, current-voltage characteristic, and differential conductivity are determined. It was shown that C_[14,17], C_[14,11], C_[14,16], C_[14,10] show a metallic nature, and polyprismanes C_[14,5], C_[14,4] possess semiconductor properties and has a band gap of 0.4 eV and 0.6 eV, respectively. It was found that, when metal C_[14,11], C_[14,10] and semiconductor C_[14,5], C_[14,4] polyprismanes are coaxially connected, a Schottky barrier is formed and a weak diode effect is observed, i.e., manifested valve (rectifying) property of telescoping polyprismanes. The enhancement of this effect occurs in the nanodevices C_[14,17] - C_[14,11] - C_[14,5] and C_[14,16] - C_[14,10] - C_[14,4], which have the properties of nanodiode and back nanodiode, respectively. The simulation results can be useful in creating promising active one-dimensional elements of nanoelectronics.

• Advances in materials Research
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• v.11 no.1
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• pp.1-22
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• 2022

In this paper, the nonlocal integral Timoshenko beam model is employed to study the free vibration characteristics of singled walled carbon nanotubes (SWCNTs) including the thermal effect. Based on the nonlocal continuum theory, the governing equations of motion are formulated by considering thermal effect. The influences of small scale parameter, the chirality of SWCNTs, the vibrational mode number, the aspect ratio of SWCNTs and temperature changes on the thermal vibration properties of single-walled nanotubes are examined and discussed. Results indicate significant dependence of natural frequencies on the nonlocal parameter, the temperature change, the aspect ratio and the chirality of SWCNTs. This work should be useful reference for the application and the design of nanoelectronics and nanoelectromechanical devices that make use of the thermal vibration properties of SWCNTs.

• Current Optics and Photonics
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• v.6 no.1
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• pp.32-38
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• 2022

Erbium-doped fiber amplifiers (EDFAs) have saturated the technological market but are still widely used in high-speed and long-distance communication systems. To overcome EDFA saturation and limitations, its erbium-doped fiber is co-doped with other materials such as zirconia and bismuth. This article demonstrates and compares the performance using three different fibers as the gain medium for zirconia-erbium-doped fibers (Zr-EDF), bismuth-erbium-doped fibers (Bi-EDF), and commercial silica-erbium-doped fibers (Si- EDF). The optical amplifier was configured with a double-pass amplification system, with a broadband mirror at the end of its configuration to allow double-pass operation in the system. The important parameters in amplifiers such as optical properties, optical amplification and noise values were also examined and discussed. All three fibers were 0.5 m long and entered with different input signals: 30 dBm for low input and 10 dBm for high input. Zr-EDF turned out to be the most relevant optical amplifier as it had the highest optical gain, longest transmission distance, highest average flatness gain with minimal jitter, and relevant noise figures suitable for the latest communication technology.