• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.148-148
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• 2010

플래시 메모리로 대표되는 비휘발성 메모리는 IT 기술의 발달에 힘입어 급격한 성장세를 나타내고 있지만, 메모리 소자의 크기가 작아짐에 따라서 그 물리적 한계에 이르러 차세대 메모리에 대한 요구가 점차 높아지고 있는 실정이다. 따라서, 이러한 문제점에 대한 대안으로서 고속 동작 및 정보의 저장 시간을 향상 시킬 수 있는 nano-floating gate memory (NFGM)가 제안되었다. Nano-floating gate에서 사용되는 nanocrystal (NCs) 중에서 Si nanocrystal은 비휘발성 메모리뿐만 아니라 발광 소자 및 태양 전지 등의 매우 다양한 분야에 광범위하게 응용되고 있지만, NCs의 크기와 밀도를 제어하는 것이 가장 중요한 문제로 이를 해결하기 위해서 많은 연구가 진행되고 있다. 또한, 소자의 소형화가 이루어지면서 기존의 플래시 메모리 한계를 극복하기 위해서 터널베리어에 관한 관심이 크게 증가했다. 특히, 최근에 많은 주목을 받고 있는 개량형 터널베리어는 크게 VARIOT (VARIable Oxide Thickness) barrier와 CRESTED barrier의 두 가지 종류가 제안되어 있다. VARIOT의 경우에는 매우 얇은 두께의low-k/high-k/low-k 의 적층구조를 가지며, CRESTED barrier의 경우에는 반대의 적층구조를 가진다. 이와 같은 개량형 터널 베리어는 전계에 대한 터널링 전류의 감도를 증가시켜서 쓰기/지우기 특성을 향상시키며, 물리적인 절연막 두께의 증가로 인해 데이터 보존 시간의 향상을 달성할 수 있다. 본 연구에서는 박막의 $SiO_2$와 $Si_3N_4$를 적층한 VARIOT 타입의 개량형 터널 절연막 위에 전하 축적층으로 $SiN_x$층의 내부에 Si-NCs를 갖는 비휘발성 메모리 소자를 제작하였다. Si-NCs를 갖지 않는 $SiN_x$전하 축적층은 Si-NCs를 갖는 전하 축적층보다 더 작은 메모리 윈도우와 열화된 데이터 보존 특성을 나타내었다. 또한, Si-NCs의 크기가 감소됨에 따라 양자 구속 효과가 증가되어 느린 지우기 속도를 보였으나, 데이터 보존 특성이 크게 향상됨을 알 수 있었다. 그러므로, NFGM의 빠른 쓰기/지우기 속도와 데이터 보존 특성을 동시에 만족하기 위해서는 Si-NCs의 크기 조절이 매우 중요하며, NCs크기의 최적화를 통하여 고집적/고성능의 차세대 비휘발성 메모리에 적용될 수 있을 것이라 판단된다.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.243-248
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• 2018

All solid state thin film batteries with two types of cell structure, Pt / $LiCoO_2$ / LiPON / Cu and Pt / $LiCoO_2$ / LiPON / $LiCoO_2$ / Cu, are prepared and their electrochemical performances are investigated to evaluate the effect of $LiCoO_2$ interlayer at the interface of LiPON / Cu. The crystallinity of the deposited $LiCoO_2$ thin films is confirmed by XRD and Raman analysis. The crystalline $LiCoO_2$ cathode thin film is obtained and $LiCoO_2$ as the interlayer appears to be amorphous. The surface morphology of Cu current collector after cycling of the batteries is observed by AFM. The presence of a 10 nm-thick layer of $LiCoO_2$ at the interface of LiPON / Cu enhances the interfacial adhesion and reduces the interfacial resistance. As a result, Li plating / stripping at the interface of LiPON / Cu during charge/discharge reaction takes place more uniformly on Cu current collector, while without the interlayer of $LiCoO_2$ at the interface of LiPON / Cu, the Li plating / stripping is localized on current collector. The thin film batteries with the interlayer of $LiCoO_2$ at the interface of LiPON / Cu exhibits enhanced initial coulombic efficiency, reversible capacity and cycling stability. The thickness of the anode current collector Cu also appears to be crucial for electrochemical performances of all solid state thin film batteries.

• Korean Journal of Metals and Materials
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• v.49 no.12
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• pp.995-1000
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• 2011

The microstructure of Cu-24 wt.%Ag filamentary nanocomposite fabricated by a thermo-mechanical process has been investigated by transmission electron microscopy (TEM) observations. This study is focused on the stability of Ag filaments formed by cold drawing; the effects of thermal treatment on the precipitation behavior and distribution of Ag-rich precipitates were also investigated. The Ag filaments elongated along the <111> orientation were observed in Cu-rich ${\alpha}$ phase of the as-drawn specimen and the copper matrix and the silver filament have a cube on cube orientation relationship. Annealing at temperatures lower than $200^{\circ}C$ for the as-drawn specimen caused insignificant change of the fibrous morphology but squiggly interfaces or local breaking of the elongated Ag filaments were easily observed with annealing at $300^{\circ}C$. When samples were annealed at $400^{\circ}C$, discontinuous precipitation was observed in supersaturated Cu solid solution. Ag precipitates with a thickness of 7-20 nm were observed along the <112> direction and the orientation relationship between the copper matrix and the Ag precipitates maintained the same orientation relationship in the as-drawn specimen. The interface between the copper matrix and the Ag precipitates is parallel to {111} and micro-twins were observed in the Ag precipitates.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.691-699
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• 2008

Electrochemical characteristics of Ti-30Ta-xZr alloys coated with HA/TiN by using magnetron sputtering method were studied. The Ti-30Ta containing Zr(3, 7, 10 and 15wt%) were 10 times melted to improve chemical homogeneity by using a vacuum furnace and then homogenized for 24hrs at $1000^{\circ}C$. The specimens were cut and polished for corrosion test and coating, and then coated with HA/TiN, respectively, by using DC and RF-magnetron sputtering method. The analyses of coated surface and coated layer were carried out by using optical microscope(OM), field emission scanning electron microscope(FE-SEM) and X-ray diffractometer(XRD). The electrochemical characteristics were examined using potentiodynamic (-1,500 mV~ + 2,000 mV) and A.C. impedance spectroscopy(100 kHz ~ 10 mHz) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The microstructure of homogenized Ti-30Ta-xZr alloys showed needle-like structure. In case of homogenized Ti-30Ta-xZr alloys, a-peak was increased with increasing Zr content. The thickness of TiN and HA coated layer showed 400 nm and 100 nm, respectively. The corrosion resistance of HA/TiN-coated Ti-30Ta-xZr alloys were higher than that of the non-coated Ti-30TaxZr alloys, whic hindicate better protective effect. The polarization resistance($R_p$) value of HA/TiN coated Ti-30Ta-xZr alloys showed $8.40{\times}10^5{\Omega}cm^2$ which was higher than that of non-coated Ti-30Ta-xZr alloys.

• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.494-499
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• 2009

As a novel method to produce a steel beam with 6mm thickness for buildings, a continuous roll forming process is reported. The roll shape is asymmetric and consists of 6 pairs of rollers to bend the steel plate from $0^{\circ}$ to $90^{\circ}$. Results obtained upon application of the roll forming process showed that the angle of the section plate is $90^{\circ}$. However, defects such as bowing and camber as high as 3.2 [$^{\circ}/m$] were observed. A FEM (Finite Element Method) analysis was applied to investigate the causes of the results for the region between rollers no. 5 and no. 6. The results of a FEM simulation of deformation and stress showed that there are some strong peak stresses on the upper surface and bottom surface of the material. The positions of the peak stresses did not show a correspondence between the upper and bottom surfaces. Thus, the defects in the process of roll forming with a 6 mm thick steel plate occur by the unbalanced stresses between the upper surface and bottom surface of the material in this study.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.538-543
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• 2008

Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.40-50
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• 2023

Recently, the number of components of smartphones increases rapidly, while the PCB size continuously decreases. Therefore, 3D technology with a stacked PCB has been developed to improve component density in smartphone. For the s tacked PCB, it i s very important to obtain solder bonding quality between PCBs. We investigated the effects of the properties, thickness, and number of layers of interposer PCB and sub PCB on warpage of PCB through experimental and numerical analysis to improve the reliability of the stacked PCB. The warpage of the interposer PCB decreased as the thermal expansion coefficient (CTE) of the prepreg decreased, and decreased as the glass transition temperature (Tg) increased. However, if temperature is 240℃ or higher, the reduction of warpage is not large. As FR-5 was applied, the warpage decreased more compared to FR-4, and the higher the number and thickness of the prepreg, the lower the warpage. For sub PCB, the CTE was more important for warpage than Tg of the prepreg, and increase in prepreg thickness was more effective in reducing the warpage. The shear tests indicated that the dummy pad design increased bonding strength. The tumble tests indicated that crack occurrence rate was greatly reduced with the dummy pad.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.375-375
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• 2012

Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.