• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.384-384
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• 2011

Carbon nanotubes (CNTs) have been studied as an ideal material for field emitters due to the high aspect ratio, excellent electrical property and good mechanical strength. There were many reports on CNT emitters fabricated on rigid substrates, but rare reports about CNT flexible field emitters. Recently, we considered that CNTs can be a good candidate for a flexible field emitter material because of their excellent Young's modulus and elasticity, which could not be achieved with metal tips or semiconducting nanowire tips. In this work, we demonstrated the CNT flexible field emitters fabricated by a simple method and studied the field emission properties of the CNT flexible field emitters under various bending conditions. The flexible field emitters showed stable and uniform emission characteristics. Especially, there is no remarkable change of the field emission properties at the CNT flexible field emitters according to the bending conditions. The CNT flexible field emitters also exhibited a good field emission performance like the low turn-on field and high emission current. Therefore, we suggest that the CNT flexible emitters can be used in many practical applications under different bending conditions.

• Journal of Powder Materials
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• v.14 no.5
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• pp.303-308
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• 2007

The oxidation of $Fe_{73}Si_{16}B_7Nb_3Cu_1$ nanocrystalline powder has been conducted to investigate its influence on the electromagnetic wave absorption characteristics of the soft magnetic material. Oxidation occurred primarily on the surface of nanocrystals. Oxidation reduced the real part of complex permeability due to the reduction of the relative volume of the powder, which otherwise contributes to the permeability. Oxidation reduced the absorption efficiency of the sheet at frequencies over 1GHz, indicating that the relative contribution of skin depth increments to the absorption was not significant. The pulverization and milling process lowered the optimum crystallization temperature of the material by $40{\sim}50^{\circ}C$ because of the internal energy accumulated during the fragmentation and powder thinning processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.175-177
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• 2002

Electrical characteristics of the Si-O superlattice diode as a function of annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice diode with multilayer Si-O structure showed the stable and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator (SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.

• Bulletin of the Korean Chemical Society
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• v.30 no.10
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• pp.2223-2226
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• 2009

Pristine and sulfur-doped (LiFe$PO_{3.98}S_{0.03}$) lithium iron phosphates were synthesized by a sol-gel method. The XRD pattern of the prepared materials suggested an orthorhombic structure with a Pnma space group and an absence of impurities. The Li/LiFe$PO_4$ or LiFe$PO_{3.98}S_{0.03}$ cells were employed for cycling studies at various temperatures (25, 50 and $60\;{^{\circ}C}$). In all cases, the Li/LiFe$PO_{3.98}S_{0.03}$ cell showed an improved performance with a stable discharge behavior of ~155 mA$hg^{-1}$. Nevertheless, pristine LiFeP$O_4$ cells presented poor discharge behavior at elevated temperatures, especially $60\;{^{\circ}C}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.779-785
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• 2012

The epoxy/micro-and nano-mixed silica composites(EMNC) systems were prepared and the AC insulation breakdown strength was evaluated. Glass transition temperature (Tg) and crosslink density were also measured by dynamic mechanical analyzer(DMA) in order to correlate them with the electrical and mechanical properties, and the effect of silane coupling agent on the electrical properties was also studied. Electrical properties and crosslink density of epoxy/micro-silica composite were noticeably improved by addition of nano-silica and silane coupling agent, and the highest breakdown strength was obtained by addition of 0.5~5 phr of nano-silica and 2.5 phr of silane coupling agent, and the highest tensile and flexural strength were obtained by addition of 2.5 phr of nano-silica.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.206-206
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• 2007

The nano-technology becomes a key technology in every field and it wasn't specialized any more. But nano-technology didn't applied every fields actively. Because It is difficult to fabricate the nanocomposites using nano-partie without aggregation of nano-size particles. So many researcher used organic solvent for dispersion in polymer nanocomposites. But organic solvent affected the electrical, mechanical, and thermal properties in the sample. We aimed this point that investigated the effect of organic solvent in the sample by evaporated temperature(60, 80, $100^{\circ}C$). In results, nano-particles affected to electrical properties of the sample due to decrease the energy gap. And at 120 Hz, impedance value of samples by varied evaporated temperature was decreased only at $60^{\circ}C$ dramatically. It's means that organic solvent role to impurities and decreased the activation energy. And these impurities contributed to the conductivity in the sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.328-328
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• 2007

$SnO_2$ has a high potential for electric and electronic applications. We have anodized pure tin metal and nano porous tin oxide film was obtained on pure Sn. Nano porous tin oxide were grown by anodization in nonaqueous-base electrolytes at different potentials between 5 V and 100 V. Pore size of ~100nm was observed by FE-SEM. Pore sizes as a function of applied voltage and anodizing time were characterized. We obtained nano porous tin oxide film having an uniform pore size at low temperature. High specific surface area of $SnO_2$ will be very useful for gas sensor, lithium battery, and dye sensitized solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.239-242
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• 2004

We investigated the nanotopography impact on the post-chemical mechanical polishing (post-CMP) oxide thickness deviation(OTD) of ceria slurry with a surfactant. Not only the surfactant but also the slurry abrasive size influenced the nanotopography impact. The magnitude of the post-CMP OTD increased with adding the surfactant in the case of smaller abrasives, but it did not increase in the case of larger abrasives, while the magnitudes of the nanotopography heights are all similar. We created a one-dimensional numercal simulation of the nanotopography impact by taking account of the non-Prestonian behavior of the slurry, and good agreement with experiment results was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.120-122
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using thin film aluminum deposited on silicon wafer was fabricated. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2M was used for low voltage anodization under 100V, the chromic acid with 0.1M was used for high voltage anodization over 100V. The nano-sized pores with diameter of 60~120nm was obtained by low voltage anodization of 40~90V and those of 200~300nm was obtained by high voltage anodization of 120~160V. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano-structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.416-417
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• 2007

MmSH injection molding method to fabricate light guiding plate with nano-sized pattern was developed. A stamper was fabricated through photolithography, dry etching, and electroplating processes. While the stamper with nano-sized pattern in mold was kept at $180^{\circ}C$ during injection process, that was cooled down to $90^{\circ}C$ quickly after the injection process. The nano-sized pattern on light guiding plate processed by MmSH injection molding method was well transferred from stamper compared to that processed by conventional injection molding process.