• 대한기계학회논문집A
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• 제27권10호
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• pp.1754-1761
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• 2003

The atomic force microscopy (AFM) based lithographic technique has been used directly to machine material surface and fabricate nano components in MEMS (micro electro mechanical system). In this paper, three-dimensional molecular dynamics (MD) simulations have been conducted to evaluate the characteristic of deformation process at atomistic scale for nano-lithography process. Effects of specific combinations of crystal orientations and cutting directions on the nature of atomistic deformation were investigated. The interatomic force between diamond tool and workpiece of copper material was assumed to be derived from the Morse potential function. The variation of tool geometry and cutting depth was also evaluated and the effect on machinability was investigated. The result of the simulation shows that crystal plane and cutting direction significantly influenced the variation of the cutting forces and the nature of deformation ahead of the tool as well as the surface deformation of the machined surface.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.295-299
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• 2012

We investigated the crystal and the optical properties of GaN-based blue light emitting diodes (LEDs) which were simultaneously grown on c-plane (0001) and semipolar (11-22) GaN templates by using metal-organic chemical vapor deposition (MOCVD). The X-ray rocking curves (XRCs) full width at half maximums (FWHMs) of c-plane (0001) and semipolar (11-22) GaN templates were 275 and 889 arcsec, respectively. In addition, high-resolution X-ray ω-2θ scan showed that satellite peaks of semipolar (11-22) InGaN quantum-wells (QWs) was weaker and broader than that of c-plane (0001) InGaN QWs, indicating that the interface quality of c-plane (0001) QWs was superior to that of semipolar (11-22) QWs. Photoluminescence (PL) and electroluminescence (EL) results showed that the emission intensity and the FWHMs of polar c-plane (0001) LED were much higher and narrower than those of semipolar (11-22) LED, respectively. From these results, we believed that relative poor crystal quality of semipolar (11-22) GaN template might give rise to the poor interfacial quality of QWs, resulting in lower output power than conventional c-plane (0001) GaN-based LEDs.

• 한국결정성장학회지
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• 제14권5호
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• pp.211-214
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• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• 한국결정성장학회지
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• 제14권1호
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• pp.1-5
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• 2004

Carbon nanofilaments were formed on silicon substrate via microwave plasma-enhanced chemical vapor deposition method. The structure of carbon nanofilaments was identified as the carbon nanofibers. The extent of carbon nanofibers growth and the diameters of carbon nanofibers increased with increasing the total pressure. The growth direction of carbon nanofibers was horizontal to the substrate. Laterally grown carbon nanofibers showed the semiconductor electrical characteristics.

• 한국결정성장학회지
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• 제15권5호
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• pp.198-201
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• 2005

Carbon nanofibers were formed on silicon substrate which was applied by negative direct current (DC) bias voltage using microwave plasma-enhanced chemical vapor deposition method. Formation of carbon nanofibers were varied according to the variation of the applied bias voltage. At -250 V, we found that the growth direction of carbon nanofibers followed the applied direction of the bias voltage. Based on these results, we suggest one of the possible techniques to control the growth direction of the carbon nanofibers.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.273-276
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• 2014

• 한국결정성장학회지
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• 제19권2호
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• pp.84-89
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• 2009

The turbid/translucent, near colorless(milky) metamorphic sapphire samples from Sri Lanka have been characterized after the heat treatment in $N_2$ at $1650^{\circ}C$. As-received sapphire specimens became bluish-colored and exhibited more clarity after the heat treatment. It was found that the color change at inclusions zoning region is attributed by the dissolution. As received samples contain the micro/nano inclusions such as rutile($TiO_2$), ilmenite($FeTiO_3$), spinel($MgAl_{2}O_{4}$)/ulvospinel($Fe_{2}TiO_{4}$) and apatite($Ca_5(PO_4)_3$), which were dissolved by the heat treatment and form the blue color through $Fe^{2+}/Ti^{4+}$ charge transferring. The microstructures become different because as the dissolution of apatite($Ca_5(PO_4)_3(OH,F,Cl)$) in alumino silicates($Al_{2}SiO_{5}$) occurred, resulting in morphological change with the appearance of(Ca, Mg, Al) silicate on the surface. Both as-received and heat treated samples showed the rhombohedral crystal structure of $Al_{2}O_{3}$.

• 한국결정성장학회지
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• 제16권2호
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• pp.53-58
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• 2006

조화용융조성 $LiNbO_3$ 결정에 외부 전계를 인가하였을 때 초기 도메인 생성 및 이동에 관하여 연구하였다. 0.5mm 두께의 $LiNbO_3$ 결정에 23.5, 22.0, 21.0kV/mm의 전계를 인가하였을 때 도메인 벽은 각각 28.70, 16.02, $5.75{\mu}m/sec$의 속도를 나타내었다. 분극 반전 시스템에 전류 제어를 위한 외부저항으로 $1 M{\Omega}$을 사용하였을 시 너무 빠른 도메인 성장으로 인하여 원활한 분극 반전 제어가 이루어지지 않으므로 $10 M{\Omega}$ 외부저항을 사용하여 전하량을 제어하여 50% duty cycle을 가진 주기적 분극 반전 $LiNbO_3$ 결정을 제작하였다.

• 대한금속재료학회지
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• 제48권8호
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• pp.757-764
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• 2010

We report on the effect of additives on the microstructure and corrosion properties of electrodeposited Cu films. Copper films were fabricated by electrodeposition on various concentrations of gelatin in a copper sulfate electrolyte. The surface morphologies of the Cu films were observed using a scanning electron microscope (SEM), and crystal orientation of the Cu films was analyzed by X-ray diffraction measurement. (220) plane was the dominant orientation when the films were fabricated at ambient temperature, decreasing in dominance with addition of gelatin. On the other hand, (111) plane-Cu films were preferentially grown at $40^{\circ}C$, and were also diminished with adding additives. Corrosion rate measurements using the Tafel extrapolation method based on corrosion potential and current reveal the effect of additives on corrosion behavior. Corrosion behavior was found to be strongly related to the orientation of the films. Consequently, additives like gelatin influence crystal orientation of the films, and if a less dense crystal plane, e.g. (220), is preferentially oriented during electrodeposition, a lower corrosion rate could be produced, since the plane shows a lower current density.

• 한국결정성장학회지
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• 제33권2호
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• pp.45-53
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• 2023

4H-SiC 기판 위의 Si 성장은 전력 반도체, 바이폴라 접합 트랜지스터 및 광전자 공학에서 매우 유용한 재료로서 광범위한 응용 분야를 가지고 있다. 그러나 Si와 4H-SiC 사이에 약 20 %의 격자 불일치로 인해 4H-SiC에서 매우 양질의 결정 Si를 성장시키는 것은 상당히 어렵다. 본 논문에서는 혼합 소스 수소화물 기상 에피택시 방법을 이용하여 4H-SiC 기판에서 성장한 Al 관련 나노 구조체 클러스터에 의한 육각형 Si 에피층의 성장을 보고한다. 4H-SiC 기판 위에 육각형 Si 에피층을 성장시키기 위해 먼저 Al 관련 나노 구조체 클러스터가 형성되고 Si 원자를 흡수하여 육각형 Si 에피층이 형성되는 과정을 관찰하였다. Al 관련 나노 구조체 클러스터와 육각형 Si 에피층에 대하여 FE-SEM 및 라만 스펙트럼 결과로부터 육각형 Si 에피층은 일반적인 입방정계 Si 구조와 다른 특성을 가지는 것으로 판단된다.