• 제목/요약/키워드: Nano-Plasma

검색결과 634건 처리시간 0.032초

Dependence of Xe Plasma Flat Fluorescent Lamp On the Electrode Gap and Dielectric Layer Thickness

  • Kang, Jong-Hyun;Lee, Yang-Kyu;Heo, Sung-Taek;Oh, Myung-Hoon;Lee, Dong-Gu
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1519-1521
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    • 2007
  • In this work, a coplanar-type plasma flat fluorescent lamp having cross type of electrode was fabricated by screen printing and sealing technique. Cross type of electrode with a dielectric layer were screen-printed on a rear glass plate, and then fired at $550^{\circ}C$. Phosphor was printed on and fired at $450^{\circ}C$. Finally, the lamp was sealed by frit glass at $450^{\circ}C$. The lamp of cross electrode type was studied depending on the electrode gap and the thickness of dielectric layer.

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Nano-porous $Al_2O_3$ used as a protecting layer of AC Plasma Display Panel

  • Park, Sung-Yun;Hong, Sang-Min;Shin, Bhum-Jae;Cho, Jin-Hoon;Kim, Seong-Su;Park, Sung-Jin;Lee, Kyu-Wang;Choi, Kyung-Cheol
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.359-361
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    • 2003
  • Nano-porous alumina was investigated as a protecting layer in an AC Plasma Display Panel. A 2 ${\mu}m$ thick nano-porous $Al_2O_3$ layer inserted with MgO was formed on the dielectric layer instead of the conventional 500 nm-thick MgO thin film. Both nano-porous $Al_2O_3$layer and inserted MgO were prepared by wet process. The luminance and luminous efficiency of 3-inch test panel adopting nano-porous $Al_2O_3$ was higher than that of the conventional PDP.

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크로뮴 카바이드 나노 분말을 이용한 용사코팅 층의 내마모 특성에 관한 연구 (Tribological Behavior of Thermally Sprayed Nano Composite Chromium Carbide)

  • 이정엽;신종한;임대순;안효석
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2001년도 제33회 춘계학술대회 개최
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    • pp.42-48
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    • 2001
  • Chromium carbides have the excellent wear properties as transition metal carbides. Their tribological applications were studied recently. The nano-sized ceramic could enhance the mechanical and electronical properties of materials. In this study, it was observed to test the wear of the coated surface of nano-sized chromium carbides. The nano-sized chromium carbides were produced by sol-gel processing. Coating surface of produced powders was obtained front plasma spraying. Wear test of coating surface was held increasing temperature. The friction coefficient and the wear loss were testified in dry environment. And the worn surfaces were analyzed by XRD and SEM.

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서스펜션 진공 플라즈마 용사법을 통한 YSZ 코팅의 형성 (Formation of YSZ Coatings Deposited by Suspension Vacuum Plasma Spraying)

  • 유연우;변응선
    • 한국표면공학회지
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    • 제50권6호
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    • pp.460-464
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    • 2017
  • As increasing thermal efficiency of the gas turbine, the performance improvement of thermal barrier coatings is also becoming important. Ytrria stabilized zirconia(YSZ) is the most popular materials for ceramic top coating because of its low thermal conductivity. In order to enhance the performance of thermal barrier coatings for hot sections in the gas turbine, suspension plasma spraying was developed in order to feed nano-sized powders. YSZ coatings formed by suspension plasma spraying showed better performance than YSZ coatings due to its exclusive microstructure. In this research, two YSZ coatings were deposited by suspension vacuum plasma spraying at 400 mbar and 250 mbar. Microstructures of YSZ coatings were analyzed by scanning electron image(SEM) on each spraying conditions, respectively. Crystalline structure transformation was not detected by X-ray diffraction. Thermal conductivity of suspension vacuum plasma sprayed YSZ coatings were measured by laser flash analysis. Thermal conductivity of suspension vacuum plasma sprayed YSZ coatings containing horizontally oriented nano-sized pores and vertical cracks showed $0.6-1.0W/m{\cdot}K$, similar to thermal conductivity of YSZ coatings formed by atmospheric plasma spraying.

Etch Characteristics of $SiO_2$ by using Pulse-Time Modulation in the Dual-Frequency Capacitive Coupled Plasma

  • 전민환;강세구;박종윤;염근영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.472-472
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    • 2011
  • The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

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플라즈마 아크 방전법에서 Fe 나노 분말 형성에 미치는 공정변수의 영향 (Effect of the Process Parameters on the Fe Nano Powder Formation in the Plasma Arc Discharge Process)

  • 이길근;김성규
    • 한국분말재료학회지
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    • 제10권1호
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    • pp.51-56
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    • 2003
  • To investigate the effect of the parameters of the plasma arc discharge process on the particle formation and particle characteristics of the iron nano powder, the chamber pressure, input current and the hydrogen volume fraction in the powder synthesis atmosphere were changed. The particle size and phase structure of the synthesized iron powder were studied using the FE-SEM, FE-TEM and XRD. The synthesized iron powder particle had a core-shell structure composed of the crystalline $\alpha$-Fe in the core and the crystalline $Fe_3O_4$ in the shell. The powder generation rate and particle size mainly depended on the hydrogen volume fraction in the powder synthesis atmosphere. The particle size increased simultaneously with increasing the hydrogen volume fraction from 10% to 50%, and it ranged from about 45nm to 130 nm.

Numerical Modeling of Nano-powder Synthesis in a Radio-Frequency Inductively Coupled Plasma Torch

  • Hur, Min Young;Lee, Donggeun;Yang, Sangsun;Lee, Hae June
    • Applied Science and Convergence Technology
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    • 제27권1호
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    • pp.14-18
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    • 2018
  • In order to understand the mechanism of the synthesis of particles using a plasma torch, it is necessary to understand the reaction mechanisms using a computer simulation. In this study, we have developed a simulation method to combine the Lagrangian scheme to follow microparticles and a nodal method to treat nanoparticles categorized with different particle sizes. The Lagrangian scheme includes the Coulomb force which affects the dynamics of larger particles. In contrast, the nodal method is adequate for the nanoparticles because the charge effect is negligible for nanoparticles but the number of nanoparticles is much larger than that of microparticles. This method is helpful to understand the dynamics and growth mechanism of micro- and nano-powder mixture observed in the experiment.

Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 Plasma Oxidation

  • Seo, Sung-Ho;Nam, Woo-Sik;Park, Jea-Gun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권1호
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    • pp.40-45
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    • 2008
  • We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

Photoluminescence Studies of ZnO Nanostructures Fabricated by Using Combination of Hydrothermal Method and Plasma-Assisted Molecular Beam Epitaxy Regrowth

  • Nam, Giwoong;Kim, Byunggu;Park, Youngbin;Kim, Soaram;Lee, Sang-Heon;Kim, Jong Su;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.202.1-202.1
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    • 2013
  • ZnO nanostructure was fabricated on a Si substrate using two-step growth. The seed layer was grown on the Si substrate by a sol-gel spin-coating. In the first step, ZnO nanorods were grown by a hydrothermal method at $140^{\circ}C$ for 5 min. In the second step, a ZnO thin film was grown on the ZnO nanorods by spin-coating. After growth, these films were annealed at $800^{\circ}C$ for 10 min. Electrical and optical properties of ZnO nanostructures have modified by plasma-assisted molecular beam epitaxy (PA-MBE) regrowth. The carrier concentration and resistivity increased by PA-MBE regrowth. In the photoluminescence, the full width at half maximum and intensity were decreased and increased, respectively, by PA-MBE regrowth.

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The effect of plamsa treatment on superconformal copper gap-fill

  • 문학기;김선일;박영록;이내응
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.249-249
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    • 2010
  • The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

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