• Title/Summary/Keyword: Nano silicon

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Optimization of Nano Machining Parameters Using Acoustic Emission and the Taguchi Method (음향방출과 다구찌 방법을 이용한 나노머시닝 가공조건의 최적화)

  • 이성환;손정무
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.3
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    • pp.163-170
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    • 2004
  • Atomic force microscope (AFM) techniques are increasingly used fur tribological studies of engineering surfaces at scales ranging from atomic and molecular to micro-scale. Recently, AFM with suitable tips is being used for nano fabrication/nano machining purposes. In this paper, machining characteristics of silicon were investigated by nano indentation and nano scratch. Nano-scale material removal mechanisms are studied and the Taguchi method was introduced to acquire optimum parameters for nano machining. Also, Acoustic Emission (AR) is used for the monitoring of nano machining.

Maskless Fabrication of the Silicon Stamper for PDMS Nano/Micro Channel (나노/마이크로 PDMS 채널 제작을 위한 마스크리스 실리콘 스템퍼 제작 및 레오로지 성형으로의 응용)

  • 윤성원;강충길
    • Transactions of Materials Processing
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    • v.13 no.4
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    • pp.326-333
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    • 2004
  • The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

Preparation of Silicon Carbide Ceramic Thick Films by Liquid Process (액상공정을 이용한 탄화규소 세라믹 후막의 제조)

  • Kim, Haeng-Man;Kim, Jun-Su;Lee, Hong-Rim;Ahn, Young-Cheol;Yun, Jon-Do
    • Journal of the Korean Ceramic Society
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    • v.49 no.1
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    • pp.95-99
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    • 2012
  • Silicon carbide ceramics are used for oxidation resistive coating films due to their excellent properties like high strength, good oxidation resistance, and good abrasion resistance, but they have poor formability and are prepared by vapor process which is complicated, costly, and sometimes hazardous. In this study, preparation of silicon carbide coating film by liquid process using polymer precursor was attempted. Coating film was prepared by dip coating on substrate followed by heat treatment in argon at $1200^{\circ}C$. By changing the dipping speed, the thickness was controlled. The effects of plasticizer, binder, or fiber addition on suppression of crack generation in the polymer and ceramic films were examined. It was found that fiber additives was effective for suppressing crack generation.

Fabrication of Micro Diamond Tip Cantilever for AFM and its Applications (AFM 부착형 초미세 다이아몬드 팁 켄틸레버의 제작 및 응용)

  • Park J.W.;Lee D.W.
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2005.05a
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    • pp.395-400
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    • 2005
  • Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin damaged layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The damaged layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

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Effect of Si on Mechanical and Anti-oxidation Properties of Ti-Si-N Coating (Si가 Ti-Si-N 코팅막의 기계적 성밀 및 내산화특성에 미치는 영향)

  • 박범희;김정애;이종영;김광호
    • Journal of the Korean Ceramic Society
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    • v.37 no.1
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    • pp.96-101
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    • 2000
  • Comparative studies on microstructure, and mechanical and anti-oxidation properties between TiN and Ti-Si-N films were performed. The Ti-Si-N films were deposited on high-speed steel and silicon wafer substrates by plasma-assisted chemcial vapor deposition(PACVD) technique. The Si addition to TiN film caused to change the microstructure such as grain size refinement, randomly multi-oriented microstructure, and nano-sized codeposition of silicon nitride in the TiN matrix. The Ti-Si-N film, contains Si content of ∼7 at.%, showed the micro-hardness value of ∼3400 HK, which was higher than the pure TiN film whose hardness was ∼1500HK. The Ti-Si(7 at.%)-N film also showed much improved anti-oxidation properties compared with those of the pure TiN film. These properties were also related to the microstructure of Ti-Si(7 at.%)-N film was formed and retarded further oxidation of the nitridelayer. These properties were also related to the microstructure of Ti-Si(7 at.%)-N film which was characterized by nano-sized precipitates of silicon nitride phase in the TiN matrix and randomly oriented grains.

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Fabrication of Micro Diamond Tip Cantilever for AFM-based Tribo-Nanolithography (AFM 기반 Tribo-Nanolithography 를 위한 초미세 다이아몬드 팁 켄틸레버의 제작)

  • Park Jeong-Woo;Lee Deug-Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.8 s.185
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    • pp.39-46
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    • 2006
  • Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin mask layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The mask layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

Performance Improvement of Flexible Thin Film Si Solar Cells using Graphite Substrate (그라파이트 기판을 이용한 유연 박막 실리콘 태양전지 특성 향상)

  • Lim, Gyeong-yeol;Cho, Jun-sik;Chang, Hyo Sik
    • Korean Journal of Materials Research
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    • v.29 no.5
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    • pp.317-321
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    • 2019
  • We investigated the characteristics of nano crystalline silicon(nc-Si) thin-film solar cells on graphite substrates. Amorphous silicon(a-Si) thin-film solar cells on graphite plates show low conversion efficiency due to high surface roughness, and many recombination by dangling bonds. In previous studies, we deposited barrier films by plasma enhanced chemical vapor deposition(PECVD) on graphite plate to reduce surface roughness and achieved ~7.8 % cell efficiency. In this study, we fabricated nc-Si thin film solar cell on graphite in order to increase the efficiency of solar cells. We achieved 8.45 % efficiency on graphite plate and applied this to nc-Si on graphite sheet for flexible solar cell applications. The characterization of the cell is performed with external quantum efficiency(EQE) and current density-voltage measurements(J-V). As a result, we obtain ~8.42 % cell efficiency in a flexible solar cell fabricated on a graphite sheet, which performance is similar to that of cells fabricated on graphite plates.

Application of nanocomposite material to avoid injury by physical sports equipment

  • Weifeng Qin;Zhubo Xu
    • Advances in nano research
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    • v.14 no.2
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    • pp.195-200
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    • 2023
  • Safety in sports is important because if an athlete has an accident, he may not be able to lead an everyday life for the rest of his life. The safety of sports facilities is very effective in creating people's sports activities, with the benefits of staying away from physical injury, enjoying sports, and mental peace. Everyone has the right to participate in sports and recreation and to ensure that they want a safe environment. This study prepares a very good Nickel-Cobalt -Silicon carbide (Ni/Co-SiC) nanocomposite with convenient geometry on the leg press machine rod, employing the pulse electrodeposition technique to reduce the rod's wear and increase the durability of sports equipment and control sports damages. The results showed that the Ni/Co-SiC nanocomposite formed at 2 A/dm2 shows extraordinary microhardness. The wear speed for the Ni/Co-SiC nanocomposite created at 4 A/dm2 was 15 mg/min, showing superior wear resistance. Therefore, the Ni/Co-SiC nanocomposite can reduce sports equipment's wear and decrease sports injuries. Ni-Co/SiC nanocomposite layers with various scopes of silicon carbide nanoparticles via electrodeposition in a Ni-Co plating bath, including SiC nanoparticles to be co-deposited. The form and dimensions of Silicon carbide nanoparticles are watched and selected using Scanning Electron Microscopy (SEM).

Sulfur Defect-induced n-type MoS2 Thin Films for Silicon Solar Cell Applications (실리콘 태양전지 응용을 위한 황 결핍 n형 MoS2 층 연구)

  • Inseung Lee;Keunjoo Kim
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.3
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    • pp.46-51
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    • 2023
  • We investigated the MoS2 thin film layer by thermolytic deposition and applied it to the silicon solar cells. MoS2 thin films were made by two methods of dipping and spin coating of (NH4)2MoS4 precursor solution. We implemented two types of substrates of microtextured and nano-microtextured 6-in. Si pn junction wafers. The fabricated MoS2 thin film layer was analyzed, and solar cells were fabricated by applying the standard silicon solar cell process. The MoS2 thin film layer of sulfur-deficient form was deposited on the n-type emitter layer, and electrons, which are minority carriers, were well transported at the interface and exhibited photovoltaic solar cell characteristics. The cell efficiencies were achieved at 5% for microtextured wafers and 2.56% for nano-microtextured wafers.

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Microstructure Characterization for Nano-thick Ir-inserted Nickel Silicides (나노급 Ir 삽입 니켈실리사이드의 미세구조 분석)

  • Song, Oh-Sung;Yoon, Ki-Jeong;Lee, Tae-Hyun;Kim, Moon-Je
    • Korean Journal of Materials Research
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    • v.17 no.4
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    • pp.207-214
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    • 2007
  • We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.