• Title/Summary/Keyword: Nano process

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Self Displacement Sensing (SDS) Nano Stage

  • Choi, Soo-Chang;Park, Jeong-Woo;Kim, Yong-Woo;Lee, Deug-Woo
    • International Journal of Precision Engineering and Manufacturing
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    • v.8 no.2
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    • pp.70-74
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    • 2007
  • This paper describes the development of a nano-positioning system for nanoscale science and engineering. Conventional positioning systems, which can be expensive and complicated, require the use of laser interferometers or capacitive transducers to measure nanoscale displacements of the stage. In this study, a new self-displacement sensing (SDS) nano-stage was developed using mechanical magnification of its displacement signal. The SDS nano-stage measured the displacement of its movement using a position-sensitive photodiode (PSPD), a laser source, and a hinge-connected rotating mirror plate. A beam from a laser diode was focused onto the middle of the plate with the rotating mirror. The position variation of the reflected beam from the mirror rotation was then monitored by the PSPD. Finally, the PSPD measured the amplified displacement as opposed to the actual movement of the stage via an optical lever mechanism, providing the ability to more precisely control the nanoscale stage. The displacement amplification process was modeled by structural analysis. The simulation results of the amplification ratio showed that the distance variation between the PSPD and the mirror plate as well as the length L of the mirror plate could be used as the basic design parameters for a SDS nano-stage. The PSPD was originally designed for a total travel range of 30 to 60 mm, and the SDS nano-stage amplified that range by a factor of 15 to 25. Based on these results, a SDS nano-stage was fabricated using principle of displacement amplification.

Nano-sized Polymer-dispersed Liquid Crystal with Strong Scattering Intensity Made by Emulsification Process

  • Jin, Yan;Lee, Burm-Young;Kwon, Soon-Bum;Lee, Ji-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.655-656
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    • 2009
  • Here we report a nano-sized polymer-dispersed liquid crystal (NPDLC) with an excellent scattering effect due to the maximized Mie scattering. We used a modified emulsification method combined with a limited coalescence mechanism. The fabrication process is simpler to obtain uniform nano-sized droplets rather than the conventional polymerizationinduced phase separation method.

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Synthesis and Properties of ITO Nano Powders by Spray Drying Process (분무건조법에 의한 ITO 나노분말의 합성과 특성)

  • 허민선;최철진;권대환
    • Journal of Powder Materials
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    • v.11 no.1
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    • pp.22-27
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    • 2004
  • The Indium Tin Oxide(ITO) nano powders were prepared by spray drying and heat treatment process. The liquid solution dissolved Indium and Tin salts was first spray dried to prepare chemically homogeneous recursor powders at the optimum spray drying conditions. Subsequently, the precursor powders were subjected to eat treatment process. The nano size ITO powders was synthesized from the previous precursor powders and the npuities also were decreased with increasing heat treatment temperature. Furthermore, the lattice parameter of TO nano powders was increased by doping Tin into Indium with increasing heat treatment temperature. The par icle size of the resultant ITO powders was about 20∼50nm and chemical composition was composed of In:Sn =86:10 wt.% at 80$0^{\circ}C$.

Fabrication of Micro Wall with High Aspect Ratio using Iterative Screen Printing

  • Yoon, Seong-Man;Jo, Jeong-Dai;Yu, Jong-Su;Yu, Ha-Il;Kim, Dong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1486-1489
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    • 2009
  • Micro wall is fabricated using iterative screen printing that it is able to fabricate the pattern as low cost, simple process, formation of pattern at large area on the various substrates. In the process of micro wall fabrication using screen printing, the printing result with pressure change in process and improvement of surface roughness using hydrophillic plasma treatment are included. Height of micro wall increase linearly and precision of iteration is very high. Error rate of printed pattern width is very high, but change rate of width is under 10 %. Fabricated micro pattern have minimum width $48.75{\mu}m$ and maximum height $75.45{\mu}m$ with aspect ratio 1.55.

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Development of Nano Machining Technology using Focused ion Beam (FIB를 이용한 나노가공공정 기술 개발)

  • 최헌종;강은구;이석우;홍원표
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.04a
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    • pp.482-486
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    • 2004
  • The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.

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Fabrications of nano-sized patterns using bi-layer UV Nano imprint Lithography (UV NIL을 이용한 Lift-off가 용이한 패턴 형성 연구)

  • Yang K.Y.;Hong S.H.;Lee H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.1489-1492
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    • 2005
  • Compared to other nano-patterning techniques, Nano imprint Lithography (NIL) has some advantages of high throughput and low process cost. To imprint low temperature and pressure, UV Nano imprint Lithography, which using the monomer based UV curable resin is suggested. Because fabrication of high fidelity pattern on topographical substrate is difficult, bi-layer Nano imprint lithography, which are consist of easily removable under-layer and imprinted pattern, is being used. If residual layer is not remained after imprinting, and under-layer is removed by oxygen RIE etching, we might be able to fabricate the bi-layer pattern for easy lift-off process.

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A Study on the Fabrication of Nano Pattern using a Nickel Stamper Replicated from Anodic Aluminum Oxide (Anodic Aluminum Oxide 기반 니켈 스탬퍼를 이용한 나노패턴 성형에 관한 연구)

  • Kim, S.;Kim, J.S.;Hong, S.K.;Kim, H.J.;Yoon, K.H.;Kang, J.J.
    • Transactions of Materials Processing
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    • v.20 no.1
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    • pp.23-28
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    • 2011
  • For the fabrication of nano patterned products manufacturing a nano patterned mold is needed in advance. The nano patterned stamper was fabricated by electroforming the AAO master with nickel. The surface of nickel-plated stamper had nano-patterned holes with the diameter of 73 nm and the depth of 83 nm. Hot embossing was used for forming P3HT sheet and the process factors of hot embossing were closer as pressure, temperature and time. In the present paper hot embossing experiments were performed to find the main process conditions to affect the replication ratio of nano patterns on surface of P3HT sheet. As a result, main contributing factors for the replication ratio of hot embossed pattern could be sequentially enumerated as pressure, temperature and time.

State of the art and technological trend for the nano-imprinting lithography equipment (나노 임프린팅 리소그래피 장비의 기술개발 동향)

  • 이재종;최기봉;정광조
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.196-198
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    • 2003
  • Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.

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Nano Molding Technology for Optical Storage Media with Large-area Nano-pattern (대면적 광 정보저장매체의 나노성형에 대한 기술 개발)

  • Shin Hong-Gue;Ban Jun-Ho;Cho Ki-Chul;Kim Heon-Yong;Kim Byeong-Hee
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.4 s.181
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    • pp.162-167
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    • 2006
  • Hot embossing lithography(HEL) has the production advantage of comparatively few process step, simple operation, a relatively low cost for embossing tools(Si), and high replication accuracy for small features. In this paper, we considered the nano-molding characteristic according to molding parameters(temperature, pressure, times, etc) and induced a optimal molding condition using HEL. High precision nano-patter master with various shapes were designed and manufactured using the DRIE(Deep Reactive ion Etching), LPCVD(Low Pressure Chemical Vapor Deposition) and thermal oxidation process, and we investigated the molding characteristic of DVD and Blu-ray nickel stamp. We induced flow behaviors of polymer, rheology by shapes and sizes of the pattern through various molding experiments. Finally, with achieving nano-structure molding with high aspect ratio, we will secure a basic technology about the molding of large-area nano-pattern media.

Characterization of Organic Light-Emitting Diode (OLED) with Dual Emission using Al:Au Cathode (Al:Au 음극층을 이용한 양면발광(dual emission) 유기 EL 소자의 Al 두께별 특성 평가)

  • Lee, Su-Hwan;Kim, Dal-Ho;Yang, Hee-Doo;Kim, Ji-Heon;Lee, Gon-Sub;Park, Jea-Gun
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.1
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    • pp.47-51
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    • 2008
  • The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

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