• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.29-32
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• 2009

Dense and periodic arrays of nano-sized holes were patterned in oxide thin film on GaAs substrate. To obtain the nano-size patterns, self-assembling diblock copolymer was used to produce thin film of uniformly distributed parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene (PS) matrix. The PMMA cylinders were removed with UV expose and acetic acid rinse to produce PS nanotemplate. By reactive ion etching, pattern of the PS template was transferred to under laid silicon oxide layer. Transferred patterns were reached to the GaAs substrate by controlling the dry etching time. We confirmed the achievement of etching through the removing oxide layer and observation of GaAs substrate surface. Optimized etching time was 90 to 100 sec. Pore sizes of the nanopattern in the silicon oxide layer were 20~22 nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.43.2-43.2
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• 2007

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.331-334
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• 2008

The replica of highly ordered nano-sphere array patterns were fabricated using hot embossing method. First, silica nano-sphere array on Si substrate was transferred to PVC film at $130^{\circ}C$ and 7 bar using hot embossing process. Then, silica nano-sphere array on PVC template was removed by soaking the PVC film in buffered oxide etcher. In order to form anti-stiction layer, the PVC template was coated with silicon dioxide layer and self-assembled monolayer. Through UV nanoimprint lithography with the fabricated flexible PVC template, highly ordered nano-sphere array pattern was imprinted on curved substrates with high fidelity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.831-841
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• 2010

Indium tin oxide (ITO) nanopowders were synthesized by coprecipitation and the sol-gel method to prepare a stable dispersion of ITO nano-colloid for antistatic coating of a display panel. The colloidal dispersions were prepared by attrition process with a vibratory milling apparatus using a suitable dispersant in organic solvent. The ITO coating solution was spin-coated on a glass panel followed by the deposition of partially hydrolyzed alkyl silicate as an over-coat layer. The double-layered coating films were characterized by measuring the sheet resistance and reflectance spectrum for antistatic and antireflective properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.479-479
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• 2011

Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.78.1-78.1
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• 2007

• Journal of Powder Materials
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• v.9 no.6
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• pp.433-440
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• 2002

Synthesis and compaction of Al-base nano powders by pulsed discharge method were investigated. The aluminum based powders with 50 to 200 nm of diameter were produced by pulsed wire evaporation method. The powders were covered with very thin oxide layer. The perspective process for the compaction and sintering of nanostructured metal-based materials stable in a wide temperature range can be seen in the densification of nano-sized metal powders with uniformly distributed hard ceramic particles. The promising approach lies in utilization of natural uniform mixtures of metal and ceramic phases, e.g. partially oxidized metal powders as fabricated in our synthesis method. Their particles consist of metal grains coated with oxide films. To construct a metal-matrix material from such powder, it is necessary to destroy the hard oxide coatings of particles during the compaction process. This goal was realized in our experiments with intensive magnetic pulsed compaction of aluminum nanopowders passivated in air.

• Journal of Powder Materials
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• v.27 no.4
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• pp.305-310
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• 2020

In this study, partially dry transfer is investigated to solve the problem of fully dry transfer. Partially dry transfer is a method in which multiple layers of graphene are dry-transferred over a wet-transferred graphene layer. At a wavelength of 550 nm, the transmittance of the partially dry-transferred graphene is seen to be about 3% higher for each layer than that of the fully dry-transferred graphene. Furthermore, the sheet resistance of the partially dry-transferred graphene is relatively lower than that of the fully dry-transferred graphene, with the minimum sheet resistance being 179 Ω/sq. In addition, the fully dry-transferred graphene is easily damaged during the solution process, so that the performance of the organic photovoltaics (OPV) does not occur. In contrast, the best efficiency achievable for OPV using the partially dry-transferred graphene is 2.37% for 4 layers.

• Applied Microscopy
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• v.45 no.3
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• pp.177-182
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• 2015

The boiler tubes of X20CrMoV12.1 used in fossil-fired power plants were obtained and analyzed for the effect of water treatment on the steam corrosion-induced oxide scale in an effort to better understand the oxide formation mechanism, as well as pertinent method of maintenance and lifetime extension. The specimens were analyzed using various microscopy and microanalysis techniques, with focuses on the effect of water treatment on the characters of scale. X-ray diffraction analysis showed that the scales of specimens were composed of hematite ($Fe_2O_3$), magnetite ($Fe_3O_4$), and chromite ($FeCr_2O_4$). Electron backscatter diffraction analysis showed that the oxides were present in the following order on the matrix: outer $Fe_2O_3$, intermediate $Fe_3O_4$, and inner $FeCr_2O_4$. After all volatile treatment or oxygenated treatment, a dense protective $Fe_2O_3$ layer was formed on the $Fe_3O_4$ layer of the specimen, retarding further progression of corrosion.