• Journal of the Korean institute of surface engineering
• /
• v.45 no.1
• /
• pp.43-52
• /
• 2012

Recently, it has been developed for Eco-environment, Super light, Multi-functional nano materials. As needed mobile parts in Smart phone or TV, computer, information communication for high pass signal, multi-function, Magnetic thin film materials have been developed. As last, magnetic powder, sintered and sputtering parts were thick and low purity than electroplating layer, low pass signal and noise were resulted, vibrated TV screen. Because chemical complex temperature was high and ununiform surface layer, it has been very difficult for data pass in High Frequency (GHz) area. Large capacity data pass is used to GHz. Above GHz, signal pass velocity is dependent on Skin Effect of surface layer. If surface layer is thick or ununiform, attachment is poor, low pass signal and cross talk, noise are produced and leaked. It has been reported technical trend of Electrochemically plating and Surface treatment of Metal, Polymer, Ceramic etc. by dispersion/complex for Multi functional nano-magnetic material in this paper.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.304-305
• /
• 2013

We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.268-271
• /
• 2005

Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1519-1521
• /
• 2007

In this work, a coplanar-type plasma flat fluorescent lamp having cross type of electrode was fabricated by screen printing and sealing technique. Cross type of electrode with a dielectric layer were screen-printed on a rear glass plate, and then fired at $550^{\circ}C$. Phosphor was printed on and fired at $450^{\circ}C$. Finally, the lamp was sealed by frit glass at $450^{\circ}C$. The lamp of cross electrode type was studied depending on the electrode gap and the thickness of dielectric layer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.261-263
• /
• 2008

We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.06a
• /
• pp.76-77
• /
• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.177-178
• /
• 2007

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.115-115
• /
• 2011

Nano hybrid superlattices consisting of organic and inorganic components have great potential for creation of new types of functional material by utilizing the wide variety of properties which differ from their constituents. They provide the opportunity for developing new materials with new useful properties. Herein, we fabricated new type of organic-inorganic nano hybrid superlattice thin films by a sequential, self-limiting surface chemistry process known as molecular layer depostion (MLD) combined with atomic layer deposition (ALD). An organic layer was formed at $150^{\circ}C$ using MLD with repeated sequintial adsorption of Hydroquinone and Titanium tetrachloride. A $TiO_2$ inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Titanium tetrachloride and water. Using UV-Vis spectroscopy, we confirmed visible light absorption by LMCT. And FTIR spectroscopy and XPS were employed to determine the chemical composition. Ellipsometry and TEM analysis were also used to confirm linear growth of the film versus number of MLD cycles at all same temperature. In addition, p-n junction diodes domonstrated in this study suggest that the film can be suitable for n-type semiconductors.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.2
• /
• pp.102-105
• /
• 2012

The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spin coating technique were studied and now presented. Thicknesses of the thin films were varied by increasing the number of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterize the structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra and photoluminescence spectra for the optical properties of the ZnO thin films. ZnO thin films with thicknesses ranging from 14.2 nm to 62.7 nm were used in this work. Film with thickness of 42.7 nm gave the lowest resistivity among all, $1.39{\times}10^{-2}{\Omega}{\cdot}cm$. Photoluminescence spectra showed two peaks which were in the UV emission centered at 380 nm, and visible emission centered at 590 nm. Optical transmittance spectra of the samples indicated that all films were transparent (>88%) in the visible-NIR range. The optical band gap energy was estimated to be 3.21~3.26 eV, with band gap increased with the thin film thickness.

• Journal of the Korean institute of surface engineering
• /
• v.43 no.2
• /
• pp.97-104
• /
• 2010

In this paper, we conducted MATLAB simulation using the reflectance formula and the Planck's black body radiation principle, for the purpose of identifying the opimum material and thickness of anti-reflective coating from double layered structures. We found that the optimum condition was obtained when refractive index of upper layer is 1.44 and that of lower layer is 2.29. As materials close to these refractive indices, $MgF_2$ as the upper layer and $HfO_2$, ZnS, $TiO_2$ as the lower layer were suggested. The best result in an average reflectance of 2.759% was obtained from a double layered structure of $MgF_2$ 94 nm/ZnS 55 nm.