• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.128-129
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• 2005

In this research, non-volatile memory effects and nano-crystal creation have been investigated in SiNx containing Si nano-crystals (Si-nc) produced by ICP-CVD and rapid thermal annealing. The quantum dots were created during rapid thermal annealing of Si-rich SiNx thin films. The quantum dot creation was analyzed with photoluminescence spectra, and in case of Si-rich SiNx, it is conformed that the quantum dots are formed easily at 750$\sim$800nm wavelength.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• 한국결정성장학회지
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• 제33권2호
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• pp.45-53
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• 2023

4H-SiC 기판 위의 Si 성장은 전력 반도체, 바이폴라 접합 트랜지스터 및 광전자 공학에서 매우 유용한 재료로서 광범위한 응용 분야를 가지고 있다. 그러나 Si와 4H-SiC 사이에 약 20 %의 격자 불일치로 인해 4H-SiC에서 매우 양질의 결정 Si를 성장시키는 것은 상당히 어렵다. 본 논문에서는 혼합 소스 수소화물 기상 에피택시 방법을 이용하여 4H-SiC 기판에서 성장한 Al 관련 나노 구조체 클러스터에 의한 육각형 Si 에피층의 성장을 보고한다. 4H-SiC 기판 위에 육각형 Si 에피층을 성장시키기 위해 먼저 Al 관련 나노 구조체 클러스터가 형성되고 Si 원자를 흡수하여 육각형 Si 에피층이 형성되는 과정을 관찰하였다. Al 관련 나노 구조체 클러스터와 육각형 Si 에피층에 대하여 FE-SEM 및 라만 스펙트럼 결과로부터 육각형 Si 에피층은 일반적인 입방정계 Si 구조와 다른 특성을 가지는 것으로 판단된다.

• 한국결정성장학회지
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• 제21권3호
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• pp.114-118
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• 2011

본 논문에서는 육각형 GaN 피라미드의 꼭지점 부분에만 나노 혹은 마이크로 크기의 GaN 구조를 선택적으로 성장시킬 수 있는 결정 성장 방볍에 대하여 연구하였다. 최적화된 포토리소그라피 공정을 이용하여 육각형 GaN 피라미드 구조의 꼭지점 부분의 $SiO_2$ 마스크 영역만을 제거할 수 있었으며, 이렇게 하여 노출된 육각형 GaN 피라미드의 꼭지점 부분에만 metal organic vapor phase epitaxy(MOVPE) 결정 성장방법을 사용하여 나노 및 마이크로 크기의 GaN 구조를 선택적으로 성장하였다. GaN 피라미드 꼭지점 부근에 형성된 나노 및 마이크로 G값J 구조는 semi-polar {1-101} 결정면으로 둘러싸인 육각 피라미드 형상을 하고 있으며 그들의 크기는 성장 시간에 의해 쉽게 조절할 수 있음을 확인하였다. TEM 관측 결과, 측면 방향으로 진행하는 관통전위들이 $SiO_2$ 마스크에 의해 효율적으로 차단되어 나노 및 마이크로 GaN 구조에서는 전위 밀도가 감소하는 것을 확인할 수 있었으나 $SiO_2$ 마스크의 끝부분의 매끄럽지 못한 부분에 의해 적층 결함이 발생함을 확인하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.498-501
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• 2005

Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for manipulation of light. The existence of a photonic bandgap, a frequency range in which propagation of light is prevented in all direction, makes photonic crystal very useful in application where spatial localization of light is required for waveguide, beam splitter, and cavity. But fabrication of 3 dimensional photonic crystal is still difficult process. a concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air, and perforated with 2 dimensional lattice of hole. We show that the polymer slabs suspended in air with triangular lattice of air hole can exhibit the in-plane photonic bandgap for TE-like modes. The fabrication of Si master with pillar structure using hot embossing process was investigated for 2 dimensional low-index-contrast photonic crystal waveguide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.171-171
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• 2012

Neutral beam assisted chemical vapor deposition (NBa-CVD) process has been developed as a nove,l room temperature deposition process for the light-soaking free nano-crystalline silicon (nc-Si) thin films including intrinsic and n-type doped thin film. During formation of nc-Si thin films by the NBa-CVD process with silicon reflector at room temperature, the energetic particles enhance doping efficiency and crystalline phase in nc-Si thin films without additional heating at substrate. The effects of incident NB energy controlled by the reflector bias have been confirmed by Raman spectra analysis. Additionally, TEM images show uniform nc-Si grains which imbedded amorphous phase without incubation layer. The nc-Si films by the NBa-CVD are hardly degenerated by light soaking; the degradations of photoconductivity were just a few percents before and after light irradiation.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.187-187
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• 1997

Silicon nitride is the most excellent materials among structural ceramics. It has been reported that fracture toughness was improved with adding second phase particles, whisker, fiber etc. However, containing of second phase particles enhanced fracture toughness, however flexural strength was degraded. As adding nanosize SiC particles into silicon nitride, the physical properties of fluxural strength, fracture toughness, the modulus of elasticity. In this study, 2wt% $Al_2$O$_3$ and 4 wt% $Y_2$O$_3$ were added into UBE E-10 and 0, 10, 20, 30, 40, 50 vol% nano-SiC powder (Sumitomo T1 powder) were added, respectively. It is hot pressed at 185$0^{\circ}C$ for 1 hour. Most of structural ceramics for engineering application are wear resistance. In this study, wear behaviors (in water) of silicon nitride with varying the amount of nano-size silicon carbide were investigated, and was compared to physical properties. Simultaneously wear mechanism will be found out.

• 한국결정성장학회지
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• 제26권2호
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• pp.74-79
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• 2016

기계적 강도가 우수한 부분안정화 지르코니아(3 mol% Yttria Partially Stabilized Zirconia) 세라믹스의 정전기 방지를 목적으로 LSM 복합 세라믹을 제조하는 과정에서 소결체 표면에서 란타늄산화물을 주조성으로 하는 나노로드의 성장을 확인하였다. 성장조건에 따라 나노로드의 직경 및 종횡비가 크게 변화하였으며, 광학현미경으로 관찰한 결과 입사광의 집속현상으로 밝게 빛나는 나노로드를 확인하였다. SEM 및 TEM으로 관찰한 결과, La를 주성분으로 하며 Sr, Mn 그리고 Si 등이 미량 첨가된 산화물임을 확인하였고, 이들의 외형으로부터 결정상이 잘 발달된 것을 확인하였다.

• 대한금속재료학회지
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• 제46권3호
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• pp.159-168
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• 2008

Thermally-evaporated 10 nm-Ni/1 nm-Ru/(30 nm or 70 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Ru-inserted nickel monosilicide. The silicide samples underwent rapid thermal anne aling at $300{\sim}1,100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution X-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope(SPM) were used to determine the cross-sectional structure and surface roughness. The silicide, which formed on single crystal silicon and 30 nm polysilicon substrate, could defer the transformation of $Ni_2Si $i and $NiSi_2 $, and was stable at temperatures up to $1,100^{\circ}C$ and $1,100^{\circ}C$, respectively. Regarding microstructure, the nano-size NiSi preferred phase was observed on single crystalline Si substrate, and agglomerate phase was shown on 30 nm-thick polycrystalline Si substrate, respectively. The silicide, formed on 70 nm polysilicon substrate, showed high resistance at temperatures >$700^{\circ}C$ caused by mixed microstructure. Through SPM analysis, we confirmed that the surface roughness increased abruptly on single crystal Si substrate while not changed on polycrystalline substrate. The Ru-inserted nickel monosilicide could maintain a low resistance in wide temperature range and is considered suitable for the nano-thick silicide process.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.61-64
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• 2010

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.