• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.19-19
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• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

• 한국분말재료학회지
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• 제13권2호
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• pp.144-149
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• 2006

In this research we tried to make nano-sized TiNx by using planetary milling, and we made the composites double layered of titanium and nano-sized TiNx by using spark plasma sintering apparatus after mixing with the different ratio of pure titanium powder, and they were heat treated at $850^{\circ}C$ for 30 minutes. The crystal structures of nano-sized TiNx powders and the composites were analyzed by X-ray diffraction (XRD). The microstructures of the powders were analyzed by using scanning electron microscopy (FESEM) and the 40-50 nm size of nano-sized TiNx particle on the surface of agglomerated particles was investigated. With increasing the ratio of nano-sized TiNx of the composites, the microvickers hardness of the composites was increased.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.36.2-36.2
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• 2007

• 대한금속재료학회지
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• 제47권9호
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• pp.591-596
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• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.