• Elastomers and Composites
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• v.46 no.2
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• pp.94-101
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• 2011

The conventional radiation barriers may show some disadvantages such as heavy weight and possibility of poisoning human bodies because they are composed of lead plates or resin plates containing large amounts of lead powders. Another disadvantage may be direct penetration of radiation through small pin holes. In this article, technologies of multi-layered polymer barriers against radiation, which has been extensively focused recently, will be introduced. A new concept of radiation protection as well as improving endurance with employing nano-layered inorganic particles is introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.3-4
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• 2005

Germanium nanocrystals(NCs) were formed in the silicon dioxide($SiO_2$) on Si layers by Ge implantation and rapid thermal annealing process. The density and mean size of Ge-NCs heated at $800^{\circ}C$ during 10 min were confirmed by High Resolution Transmission Electron Microscopy. Capacitance versus voltage(C-V) measurements of MOS capacitors with single $Al_2O_3$ capping layers were performed in order to study electrical properties. The C-V results exhibit large threshold voltage shift originated by charging effect in Ge-NCs, revealing the possibility that the structure is applicable to Nano Floating Gate Memory(NFGM) devices.

• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.679-682
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• 2009

Utilizing a planar five coordinating N3S2 ligand, 2,6-bis(2-methylthiophenyliminomethyl)pyridine, a pseudo 7-coordinated manganese(II) complex with two labile triflate anions in the axial positions was synthesized. The reaction of the manganese(II) complex with an oxidant, iodosylbenzene, produced a metastable high-valent manganese(IV)-oxo species at 0 ${^{\circ}C}$. The high-valent Mn(IV)-oxo intermediate was characterized with a UV-vis spectrophotometer and an electrospray ionization mass spectroscopy. Reactivity studies of the Mn(IV)=O species revealed that the intermediate is capable of oxygenating $PPh_3$ and N-dealkylating N,N-dimethyl-toludine.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.72-72
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• 2003

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1371-1374
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• 2011

• Polymer Science and Technology
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• v.23 no.3
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• pp.260-272
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• 2012

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.162-162
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.206-207
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• 2005

• Journal of Sensor Science and Technology
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• v.18 no.6
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• pp.475-484
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• 2009

In this paper, an analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure consists of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process. Measured results show that the output signal range is from 0.8 V to 3.8 V. This output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.

• Membrane Journal
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• v.21 no.3
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• pp.299-305
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• 2011

This study deals with the preparation of polymeric electrolyte membranes having high durability for the application of fuel cells. The membranes under investigation were prepared the impregnation to porous polyethylene membranes with poly(vinyl alcohol)(PVA), poly(styrene sulfonic acid-co-maleic acid), and (PSSA-MA)3-(trihydroxysilyl)-1-propanesulfonic acid (THS-PSA). To characterize the resulting membranes, the water contents, the contact angles, FT-IR, the proton conductivity and the the modulus were measured. The proton conductivity of 30% content of THS-PSA at $55^{\circ}C$ gave excellent $1.27{\times}10^{-1}S/cm$ and the mechanical strength was improved 7 times higher up to the THS-PSA content 15%, as a result, the durability was elevated extensively.