• Spatial Information Research
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• v.20 no.5
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• pp.67-76
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• 2012

Recently the mobile DBMS (Database Management System) is popular to store and manage large data in a mobile device. Especially, the research and development about mobile storage structure and querying method for navigation map data in a mobile device have been performed. The performance of the mobile DBMS in which random data accesses are most queries if the NAND flash memory is used as storage media of the DBMS is degraded. The reason is that the performance of flash memory is good in writing sequentially but bad in writing randomly as the features of the NAND flash memory. So, new storage structure and querying policies of the mobile DBMS are needed in the mobile DBMS in which a flash memory is used as storage media. In this paper, we have studied the policy of the database page management to enhance the performance of the frequent random update and applied this policy to the navigation-specialized mobile DBMS which supports incremental map update. And also we have evaluated the performance of this policy by experiments.

• Journal of KIISE:Computer Systems and Theory
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• v.37 no.5
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• pp.272-284
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• 2010

Flash Memory differs from the hard disk, because it cannot be overwritten. Most of the flash memory file systems use not-in-place update mechanisms for the update. Flash memory file systems execute sometimes block cleaning process in order to make writable space while performing not-in-place update process. Block cleaning process collects the invalid pages and convert them into the free pages. Block cleaning process is a factor that affects directly on the performance of the flash memory. Thus this paper suggests the efficient page allocation method, which reduces block cleaning cost by minimizing the numbers of block that has valid and invalid pages at a time. The result of the simulation shows an increase in efficiency by reducing more block cleaning costs than the original YAFFS.

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.9
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• pp.898-903
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• 2010

Popularity of smartphones such as Google Android phones and Apple iphones, is increasing the demand on more reliable high performance file system for flash memory. In this paper, we propose two techniques to improve the performance of YAFFS (Yet Another Flash File System), while enhancing the reliability of the system. Specifically, we first propose to manage metadata and user data separately on segregated blocks and indexing information piggy-back technique for reducing mount time and also enhancing performance. Second, we tailor the wear-leveling to the segregated metadata and user data blocks. Performance evaluation results based on real hardware system with 1GB NAND flash memory show that the YAFFS with our proposed techniques realized outperforms the original YAFFS by six times in terms of mount speed and five times in terms of benchmark performance, while reducing the average erase count of blocks by 14%.

• Proceedings of the Korean Information Science Society Conference
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• 2007.10a
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• pp.96-97
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• 2007

• The Magazine of the IEIE
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• v.37 no.3
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• pp.31-42
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• 2010

• Journal of the Korea Society of Computer and Information
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• v.24 no.2
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• pp.1-7
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• 2019

This paper presents CTP (Compact Translation Page), a compact representation of translation pages, for page mapping-based flash translation layers to improve RAM utilization and reduce the response time of solid state drives. CTP can store translation information twice in a translation page and the total number of translation pages stored in flash is reduced to half. Therefore, CTP halves the RAM size of the directory of translation pages and uses the saved RAM space for translation cache. CTP shows the best response time when compared to existing page mapping-based flash translation layers.

• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.5
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• pp.269-277
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• 2018

NAND flash memory has widely been used because of non-volatility, low power consumption and fast access time. However, it suffers from inability to provide update-in-place and the erase cycle is limited. The unit of read/write operation is a page and the unit of erase operation is a block. Moreover erase operation is slower than other operations. We proposed the Adaptive Garbage Collection (called "AGC") policy which focuses on not only reducing garbage collection process time for real-time guarantee but also wear-leveling for a flash memory lifetime. The AGC performs better than Cost-benefit policy and Greedy policy. But the AGC does not consider the operation characteristics. So we proposed the Advanced Adaptive Garbage Collection (called "A-AGC") policy which considers the page write operation count and block erase operation count. The A-AGC reduces the write operations by considering the data update frequency and update data size. Also, it reduces the erase operations by considering the file fragmentation. We implemented the A-AGC policy and measured the performance compared with the AGC policy. Simulation results show that the A-AGC policy performs better than AGC, specially for append operation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.12C
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• pp.965-970
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• 2010

In the NAND flash memory storing two bits per cell, data is discriminated among four levels of electrical charges. We refer to these four levels as E, P1, P2, and P3 from the low voltage. In the statistics, many errors occur when E and P3 are stored at the next cells. Therefore, we propose a coding scheme for avoiding E-P3 or P3-E data patterns. We investigate two modulation codes for 9/10 code (9 bit input and 5 symbol codeword) and 11/12 code (11 bit input and 6 symbol codeword).

• Journal of the Korea Society of Computer and Information
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• v.25 no.10
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• pp.1-14
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• 2020

In this paper, we propose to solve the problem of increasing system memory usage due to an increase in the number of mapping information management when using a NAND flash memory-based storage device in an existing sector-based file system. The proposed technique is to store only mapping information in page units based on index blocks and manage them in block units. To this end, the proposed technique uses a sequential offset for storing and managing a plurality of mapping information in one page in a small block, and a reverse offset for a spare page corresponding to a change in mapping information in the block. Through this, the proposed technique has the advantage that the number of block-unit deletions is less than that of the existing technique, and the system memory usage required for mapping information management is low. Reduced by about 32%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.125-131
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• 2001

When the program voltage is applied to a word line, a part of the boosted channel charge in inhibited bit lines is lost due to the coupling between the string select line (SSL) and the adjacent word line. This phenomenon causes the program disturbance in the cells connected to the inhibited bit lines. This program disturbance becomes more serious, as the word line pitch is decreased. To reduce the word line coupling, the rising edge of the word-line voltage waveform was changed from a pulse step into a ramp waveform with a controlled slope. The word-line ramping circuit was composed of a timer, a decoder, a 8 b D/A converter, a comparator, and a high voltage switch pump (HVSP). The ramping voltage was generated by using a stepping waveform. The rising time and the stepping number of the word-line voltage for programming were set to $\mutextrm{m}-$ and 8, respectively,. The ramping circuit was used in a 512Mb NAND flash memory fabricated with a $0.15-\mutextrm{m}$ CMOS technology, reducing the SSL coupling voltage from 1.4V into a value below 0.4V.