• Journal of KIISE:Computer Systems and Theory
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• v.37 no.4
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• pp.215-225
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• 2010

The NAND flash memory based SSDs are considered to replace the existing HDDs. To maximize the I/O performance, SSD is composed of several NAND flash memories in parallel. However, to adopt the hybrid mapping scheme in SSD may cause degradation of the I/O performance. In this paper, we propose a new mapping scheme for the SSD called WADPM. WADPM loads only necessary mapping information into RAM and dynamically adjusts the size of mapping information in the RAM. So, WADPM avoids the shortcoming of page-level mapping scheme that requires too large mapping table. Performance evaluation using simulations shows that I/O performance of WADPM is 3.5 times better than the hybrid-mapping scheme and maximum size of mapping table of WADPM is about 50% in comparison with the page-level mapping scheme.

• KIPS Transactions on Computer and Communication Systems
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• v.5 no.11
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• pp.379-384
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• 2016

NAND flash storage is widely used for computer systems, because of it has faster response time, lower power consumption, and larger capacity per unit area than hard disk. However, currently used I/O scheduler in the operating system is optimized for characteristics of the hard disk. Therefore, the conventional I/O scheduler includes the unnecessary overhead in the case of the NAND flash storage to be applied. Particularly, when the write requests performed intensively, garbage collection is performed intensively. So, it occurs the problem that the processing of the I/O request delay. In this paper, we propose the new I/O scheduler to solve the problem of garbage collection performs intensively, and to optimize for NAND flash storage. In the result of performance evaluation, proposed scheme shows an improvement the user responsiveness by reducing 1% of the average read response time and 78% of the maximum response time.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.2
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• pp.98-113
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• 2009

Conventional file systems for harddisk drive cannot be applied to NAND flash memory, because the physical characteristics of NAND flash memory differs from those of harddisk drive. To address this problem, various file systems with better reliability and efficiency have also been developed recently. However, those file systems have inherent overheads for updating the file's metadata pages, because those file systems save file's meta-data and data separately. Furthermore, those file systems have a critical reliability problem: file systems fail when either a page in meta-data of a file system or a file itself fails. In this paper, we propose a self-description page technique and In Memory Core File System technique to address these efficiency and reliability problems, and develop SDFS(Self-Description File System) newly. SDFS can be safely recovered, although some pages fail, and improves write and read performance by 36% and 15%, respectively, and reduces mounting time by 1/20 compared with YAFFS2.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.5
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• pp.333-337
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• 2007

Flash Translation Layer(FTL) which enables NAND Flash memory-based storage system to be used as a block device is designed considering only characteristics of NAND Flash memory. However, since FTL precesses I/O requests which survived against buffer replacement algorithm, FTL algorithm has tight relationship with buffer replacement algorithm. Therefore, if we do not consider both FTL and buffer replacement algorithms, it is difficult to predict the actual I/O performance of the computer systems that have Flash memory-based storage system. The necessity of FTL and buffer replacement algorithm co-design arises here. In this work, we implemented I/O performance evaluation tool, IPSiNS, which simulates both the buffer replacement and FTL algorithms, simultaneously.

• Proceedings of the Korean Society of Computer Information Conference
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• 2021.07a
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• pp.1-2
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• 2021

3D NAND 플래시 메모리는 플래너(2D) NAND 셀을 적층하는 방식으로 단위 면적당 고용량을 제공한다. 하지만 적층 공정의 특성상 각 레이어별 또는 셀 위치에 따라 오류 발생 빈도가 달라질 수 있는 문제가 있다. 이와 같은 현상은 플래시 메모리의 쓰기/지우기(P/E) 횟수가 증가할 수록 두드러진다. SSD와 같은 대부분의 플래시 기반 저장장치는 오류 교정을 위하여 ECC를 사용한다. 이 방법은 모든 플래시 메모리 페이지에 대하여 고정된 보호 강도를 제공하므로 물리적 위치에 따라 에러 발생률이 각기 다르게 나타나는 3D NAND 플래시 메모리에서는 한계를 보인다. 따라서 본 논문에서는 오류 발생률 차이를 보이는 페이지와 레이어를 분류하여 각 영역별로 차별화된 보호강도를 적용한다. 우리는 페이지와 레이어별로 오류 발생률이 현저하게 달라지는 3K P/E 사이클에서 측정된 오류율을 바탕으로 페이지와 레이어를 분류하고 오류에 취약한 영역에 대해서는 패리티 데이터를 추가하여 차별화된 보호 강도를 제공한다. 오류 발생 횟수에 따른 영역 구분을 위하여 K-Means 머신러닝 알고리즘을 사용한다. 우리는 이와 같은 차별화된 보호정책이 3D NAND 플래시 메모리의 신뢰성과 수명향상에 기여할 수 있는 가능성을 보인다.

• Journal of Korea Multimedia Society
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• v.12 no.2
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• pp.165-177
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• 2009

Embedded database systems (EDBMS) based on NAND flash memories are widely adopted for logging data on sensor nodes. Since write and erase operations of a flash memory are time consuming compared to read operations and wear memory cells, it is important to reduce these operations to enhance the EDBMS performance and to extend the memory life. In this paper, we propose a delayed write scheme to archive this goal. Proposed scheme stores updated parts of database pages into delayed write records to reduce the database page writes. By doing that, it decreases write and erase operations on a flash memory. Therefore, the proposed scheme enhances the logging performance of a write-intensive EDBMS on a sensor node and extends the flash memory life.

• Journal of Digital Contents Society
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• v.8 no.4
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• pp.593-600
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• 2007

Small computer systems such as mobile devices adopt NAND flash memories as their storage media. However, DBMS running on such systems are optimized to hard disks. When small computer systems use DBMS they usually use additional system layer, like FTL, that emulates flash memories as normal hard disks and DBMS cannot control flash memories directly. In this paper, we propose unified storage system that DBMS controls flash memories directly. We implemented the system in a real environment and proved the proposed system outperforms legacy systems.

• Journal of KIISE:Computer Systems and Theory
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• v.37 no.6
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• pp.330-338
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• 2010

Flash storage devices are very popularly used in portable devices such as cell phones, PDAs and MP3 players. As technology is improved, users want much bigger and faster storage system. Paradoxically, people have to wait more and more time proportionally to the capacity of their storage devices when these are trying to be recovered after file system crash. It is serious problem because booting time of devices is dominated by crash recovery of flash file system. In this paper, we design a crash recovery mechanism, named 'Working Area(WA hereafter)' technique, which has bounded crash recovery execution time. With WA technique, write operations to flash memory are only performed in WA. Therefore, by simply scanning the latest WA. We can recover a file system crash because every change for flash memory is occured only in latest WA. We implement the WA technique based on YAFFS2 and evaluate by comparing with traditional techniques. As a result, WA technique shows that its crash recovery execution time is 25 times faster than Log-based Method when we use 1 gig a bytes NAND flash memory in worst case. This gap will be futher and futher as storage capacity grows.

• Proceedings of the Korean Information Science Society Conference
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• 2004.04a
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• pp.178-180
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• 2004

최근 소형 모바일 기기들이 대중화되고 그 종류가 다양해지면서 플래시 메모리가 기본 저장 매체로서 많이 사용되고 있다. 플래시 메모리는 기존의 하드디스크 같은 자기 매체에 비해서 크기가 작고, 전력소모도 적으며 내구성도 높다. 멀티미디어 데이터를 다루는 기기들이 증가하면서 플래시 메모리 중에서도 비용이 저렴하고 단일 칩으로도 대용량을 가지는 NAND형 플래시 메모리를 저장장치로 사용하는 기기들이 계속해서 늘어나고 있다. NAND 플래시 메모리는 기존에 많이 사용되던 NOR 플래시 메모리와는 다른 않은 특징이 있다. 따라서 NAND 플래시 메모리에 적합한 저장 기법을 설계하기 위해서는 NAND 플래시 메모리의 특징을 잘 이해하고 이용해야 한다. 이에 본 논문에서는 NAND 플래시 메모리를 효율적으로 사용할 수 있도록 해주는 접근계층을 설계, 구현하고 이에 대한 구조와 세부 특징에 대해서 살펴본다. 본 논문에서 구현한 접근계층은 하드웨어에 종속적이지 않으며 NAND 플래시 메모리가 제공하는 다양한 기능을 상위 계층에서 충분히 활용할 수 있도록 설계되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.260-264
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• 2017

Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.