• Title/Summary/Keyword: N_4

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p형 불순물이 첨가된 정공 수송층을 사용한 녹색 유기발광소자의 전하전송 메카니즘

  • Lee, Gwang-Seop;Chu, Dong-Cheol;Kim, Tae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.424-424
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    • 2010
  • 유기발광소자는 전류구동소자로서 소자를 대형화할 때 소모 전력이 급격히 증가하여 다른 디스플레이 제품에 비해 더욱 더 높은 전력효율을 요구한다. 높은 전력효율과 낮은 구동전압을 갖는 유기발광소자를 제작하기 위해서 P-I-N구조의 유기발광소자에 관한 연구가 활발히 진행되고 있다. 본 연구에서는 일함수가 큰 투명 Indium Tin Oxide (ITO) 양극 위에 p 형 불순물인 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane (F4-TCNQ) 를 4,4',4"-tris(N-(2naphthyl)-N-phenylamino)triphenylamine (2-TNATA)에 도핑하여 정공주입 및 정공수송을 향상하였으며, 그위에 N,N'-bis(1-naphthyl)-N,N'-diphenyl- 1,1'-biphenyl-4,4'-diamine (NPB) 층을 증착 후, tris-(8-hydroxyquinoline) aluminum ($Alq_3$) 발광층과 전자 수송층으로 사용하여 전자와 정공이 재결합을 하여 엑시톤을 형성하여 녹색 빛을 측정하였다. p 형 불순물은 정공 수송층의 에너지 장벽을 감소하며 발광층으로의 정공주입량을 증가하는 역할을 하여 구동전압을 감소하였으나 발광층내에서 전자와 정공의 비를 불균일하게 하여 발광효율은 약간 감소하였다. p형 불순물인 F4-TCNQ의 도핑의 농도에 따라 측정된 발광특성의 변화로부터 정공의 전송 메카니즘을 분석하였으며 이는 p형 불순물 첨가된 녹색 유기발광소자의 전하수송 메카니즘을 이해하는데 중요한 자료를 제공할 것이다.

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Effects of application rates of mineral N and cattle slurry on the dry matter yield of Orchardgrass (무기태 질소와 액상구비의 시용수준이 Orchardgrass의 건물수량에 미치는 영향)

  • Lee, J.S.;Yim, S.G.;Chung, J.C.
    • Journal of the Korea Organic Resources Recycling Association
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    • v.1 no.2
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    • pp.275-286
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    • 1993
  • This experiment was to study the effects of application rates of mineral N and cattle slurry on the dry matter yield of Orchardgrass grown in different cutting frequency. Annual rates of mineral N of 0($N_0$), 90kg($N_1$), 180kg($N_2$) and 270kg/ha($N_3$) in 3 cuttings, and 0($N_0$), 120kg($N_1$), 240($N_2$) and 360kg/ha($N_3$) were applied as urea in 4 cuttings. Cattle slurry applied at rates of $30m^3(S_1)$, $60m^3(S_2)$ and $90m^3/ha(S_3)$, suppling 90kg, 180kg and 240kg N/ha in 3 cuttings, and at rates of $40m^3(S_1)$, $80m^3(S_2)$ and $120m^3/ha(S_3)$, suppling 120kg, 240kg and 360kg N/ha in 4 cuttings, respectively. The results were summarized as follows; 1. Mineral N and cattle slurry application rates(N), and cuts(C) were significant differences at the 0.1% level(p<0.001), and 5% level(p<0.05) for the interaction of $N{\times}C$ in both cuttings. 2. The annual dry matter yields obtained were 8.8ton-10.1ton/ha at rates of $N_1-N_3$, and 7.1ton-9.5ton/ha at rates of $S_1-S_3$ in 3 cuttings. The annual dry matter yields obtained were 10.9ton-13.9ton/ha at rates of $N_1-N_3$, and 6.9ton-11.2ton/ha at rates of $S_1-S_3$ in 4 cuttings, respectively. 3. Relative efficiency of cattle slurry N for the dry matter production of Orchardgrass pasture as compared to mineral N were 91.4%(ranged from 72.2% to 109.7%) in 3 cuttings, and 75.1%(ranged from 48.3% to 107.9%) in 4 cuttings, respectively. 4. The annual cattle slurry application rates required to maintain highest dry matter yields were estimated to be 90m3/ha(270kg N/ha) and 80m3/ha(240kg N/kg) in 3 and 4cuttings.

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Fatty Acids Composition in Viscera and Muscle of the Philippines Pinkgray Goby, Amblvchaeturichthys hexanema

  • Choi Byeong-Dae;Kang Seok-Joong;Jeong Bo-Young;Mendoza Lonarda S.
    • Fisheries and Aquatic Sciences
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    • v.4 no.4
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    • pp.265-267
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    • 2001
  • In this study, lipid classes and fatty acids composition in viscera and muscle of the philippines Pinkgray goby, Amblychaeturichtys hexanema were determined. The viscera contained high levels of total lipid $(TL,\;4.8\%)$, while the muscle contained less TL $(0.5\%)$. TL in the viscera consisted of triacylglycerol $(83.9\%)$, diacylglycerol $(7.9\%)$, polar lipid $(7.4\%)$, and cholesterol $(0.8\%)$. However, the muscle contained a small amount of TG $(3.0\%)$ and much more PL $(73.8\%)$. Principal fatty acids composition of PL and NL in the viscera and muscle were 16:0, 16:1n-7, 18:0, 18: 1n-9, 18:1n-7, l8:3n-3, 20:5n-3, 22:5n-3, and 22:6n-3.

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CLASSES OF HYPERSURFACES WITH VANISHING LAPLACE INVARIANTS

  • Riveros, Carlos M.C.;Corro, Armando M.V.
    • Bulletin of the Korean Mathematical Society
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    • v.49 no.4
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    • pp.685-692
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    • 2012
  • Consider a hypersurface $M^n$ in $\mathbb{R}^{n+1}$ with $n$ distinct principal curvatures, parametrized by lines of curvature with vanishing Laplace invariants. (1) If the lines of curvature are planar, then there are no such hypersurfaces for $n{\geq}4$, and for $n=3$, they are, up to M$\ddot{o}$bius transformations Dupin hypersurfaces with constant M$\ddot{o}$bius curvature. (2) If the principal curvatures are given by a sum of functions of separated variables, there are no such hypersurfaces for $n{\geq}4$, and for $n=3$, they are, up to M$\ddot{o}$bius transformations, Dupin hypersurfaces with constant M$\ddot{o}$bius curvature.

Synthesis of N,N-Dimethylacetamide from Carbonylation of Trimethylamine by Rhodium(I) Complex Under Anhydrous Condition

  • Hong, Jang-Hwan
    • Journal of Integrative Natural Science
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    • v.8 no.4
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    • pp.235-243
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    • 2015
  • Rhodium(I)-complex of $[Rh(CO)_2I_2{^-}]$ catalyzed carbonylation of anhydrous-trimethylamine in the presence of methyl iodide to give DMAC (N,N-dimethylacetamide) in no solvent. The catalyst had been reused 20 times, the analyses and distillation of collected products showed that the yields of DMAC, MAA (N-methylacetamide), and DMF (N,N-dimethylformamide) were 82.3%, 12.6%, and 4.4%. The conversion rate of trimethylamine was 99 % and the selectivity of DMAC was 82.3% with TON (Turnover Number) of 700. Stepwise procedure of inner-sphere reductive elimination for the formation of DMAC was suggested instead of acyl iodide intermediate.

Extraction of Acetic Acid by Aliphatic Amino Extractants (지방족 아민 추출제에 의한 초산의 추출)

  • Lee, Han-Seob
    • Applied Chemistry for Engineering
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    • v.5 no.1
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    • pp.121-126
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    • 1994
  • To elucidate the effect on the reactive extraction of acetic acid, various carriers and modifiers were investigated. Carriers used were secondary and tertiary amines and solvation extractant. Diluent was n-butylacetate. Modifiers were 4-nonylphenol, TBP(Tti-n-butyl phospate) and isodecanol. Besides the effect of temperature and pH in aqueous phase were studied. The mixture of 50% tri-n-octyl/n-decylamine tertiary amine, gave higher degree of extraction and selectivity than other extractants in the extraction of acetic acid. It was found that 4-nonylphenol as modifier fairly good. The degree of extraction was higher with decreasing the pH in aquous phase and the temperature of extraction system.

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COEFFICIENT INEQUALITIES FOR ANALYTIC FUNCTIONS CONNECTED WITH k-FIBONACCI NUMBERS

  • Serap, Bulut;Janusz, Sokol
    • Honam Mathematical Journal
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    • v.44 no.4
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    • pp.521-534
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    • 2022
  • In this paper, we introduce a new class 𝓡kλ(λ ≥ 1, k is any positive real number) of univalent complex functions, which consists of functions f of the form f(z) = z + Σn=2 anzn (|z| < 1) satisfying the subordination condition $$(1-{\lambda}){\frac{f(z)}{z}}+{\lambda}f^{\prime}(z){\prec}{\frac{1+r^2_kz^2}{1-k{\tau}_kz-{\tau}^2_kz^2}},\;{\tau}_k={\frac{k-{\sqrt{k^2+4}}}{2}$$, and investigate the Fekete-Szegö problem for the coefficients of f ∈ 𝓡kλ which are connected with k-Fibonacci numbers $F_{k,n}={\frac{(k-{\tau}_k)^n-{\tau}^n_k}{\sqrt{k^2+4}}}$ (n ∈ ℕ ∪ {0}). We obtain sharp upper bound for the Fekete-Szegö functional |a3-𝜇a22| when 𝜇 ∈ ℝ. We also generalize our result for 𝜇 ∈ ℂ.

Selective etch of silicon nitride, and silicon dioxide upon $O_2$ dilution of $CF_4$ plasmas ($CF_4$$O_2$혼합가스를 이용한 산화막과 질화막의 선택적 식각에 관한 연구)

  • 김주민;원태영
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.90-94
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    • 1995
  • Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

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