• Journal of the Korean Ceramic Society
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• v.28 no.2
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• pp.130-140
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• 1991

The powders of the system Si3N4-Y2O3-AlN were prepared using Si(OC2H5)4 and YCl3.6H2O together with commercial AlN powder. $\alpha$-Si3N4 was prepared by the carbothermal reduction and nitridation of the hydrolyzed gel at 135$0^{\circ}C$ for 10h in N2 atmosphere. YCl3.6H2O was observed to be changed to Y2O3 during the reaction. $\alpha$-Sialon(X=0.2, 0.4, 0.6) ceramics were obtained by hot-pressing the Si3N4-Y2O3-AlN mixture at 178$0^{\circ}C$ for 1h under 30 MPa. The content of $\alpha$-Sialon increased with increasing metal solubility(x value) and $\alpha$-Sialon single phase was obtained at the metal solubility of 0.6. With increasing metal solubility, flexural strength, fracture toughness and thermal shock resistence were decreased, while the microhardness was increased. Large elongated $\beta$-Si3N4 grains were mainly observed at lower metal solubility. Mechanical prorerties of the sintered ceramics with X=0.2 were measured as follows : flexural strength ; 650 MPa, fracture toughness ; 3.63 MN/m3/2, hardness ; 14.7 GPa, thermal shock resistence temperature ; 58$0^{\circ}C$.

• 한국HCI학회:학술대회논문집
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• 2006.02b
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• pp.351-355
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• 2006

1990년대 후반 이후 등장한 N세대 N generation라는 신조어는 넓게는 '10대 후반과 20대 초반의 새로운 세대'라는 'new'의 개념에서의 N세대 new generation를, 좁게는 '네트워크 network를 자유자재로 다루는 세대' 또는 '네트워크 속에서 생활하는 세대' 라는 '디지털 유저 digital user'의 개념에서의 N세대 network generation를 의미한다. 다시 말해, N세대는 디지털 디바이스의 정보와 지식을 바탕으로 자유롭게 디지털 세상을 넘나드는 젊은 디지털 유저 층이다. 본 연구의 목적은 디지털 디바이스 프로덕트 광고의 한 사례를 기호학적으로 분석하여 '"디지털 디바이스+ N세대=디지털 코드"라는 광고공식'과 '외연과 내연이 합해져 "기술적 시니피앙과 감성적 시니피에"의 상호작용적 조합 interaction'을 찾아보는 것에 있다. 여기서는 광고 분석의 사례로써 삼성 KENOX V4 광고를 이용한다. KENOX V4 는 N세대를 겨냥한 디지털 디바이스 프로덕트이며, 이 광고는 '외국 브랜드를 제압하는 의미의 V'라는 코드를 사용하고 있다. 자기만의 주장을 당당하게 할 줄 아는 N세대가 소년기에 가졌던 한국이라는 자부심이 그가 성인기에 들어선 이후에도 V라는 승리의 표상으로 나타나고 있는 것이다. V4 광고의 이미지는 N세대를 상징하는 강력한 '디지털 코드digital code'를 담아내고 있으며, 그 V4의 메시지는 '4백만 화소'라는 '기술적 시니피앙 technological significant'과 '4가지 승리'라는 '감성적 시니피에 emotional signifie'의 상호작용적 조합을 구성하고 있다.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.28 no.4
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• pp.196-207
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• 2015

Purpose : To observe effects of Korean Medicine treatment for genital warts.Methods : In a single private clinic from February 2014 to February 2015, we did retrospective chart review for 326 patients with genital warts who had been treated by Korean Medicine. Korean Medicine treatment included herbal treatment and herbal ointment.Results : A total of 326 patients were enrolled in this study: 62.7%(n=219) male, 32.8%(n=107) female. In the type of diagnosis, new diagnosis was 45.4%(n=148) and recurrent disease was 54.6%(n=178). Complete clearance was achieved 63.2%(n=206) and treatment period was 3.5 months(range:1-9). Partial clearance-good was 15%(n=49), partial clearance-poor was 4.9%(n=16), non response was 16.9%(n=55) and the average treatment period was 4.3 months(range:1-14). In complete clearance group, female and the prevalence of less than 1 year were statistically significant(p<0.05). There was no recurrence of genital warts after TKM treatment during follow-up period(4-13months).Conclusion : This study suggest that Korean Medicine may be an effective treatment for genital warts.

• Journal of the Korean Chemical Society
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• v.21 no.6
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• pp.449-452
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• 1977

The effect of carbon number of hydrocarbon used as a carbon source in the production of cellular lipid of Rhodotorula sp. and its fatty acid composition were investigated. Using Rhodotorula sp. on n-tetradecane and n-hexadecane whose carbon numbers are even, fermentation was carried out in a jar fermentor of 2 liter-capacity at $28^{\circ}C$, with pH range of 4.0∼4.6 and at oxygen flowing rate of 0. 4 vvm and agitation velocity of 1000 rpm. Drying the produced cell after completion of fermentation, cellular lipid was extracted from the cell using soxhlet extractor and examined its fatty acid composition by gas-liquid chromatography. Cellular lipid content in the cell produced on n-tetradecane and n-hexadecane were 12.0 % and 25,8 % on the basis of dry cell weight, respectively and their fatty acids were mostly even numbered in carbon number.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.140-148
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• 1998

We prepared $C_3N_4$ films by rf plasma enhanced chemical vapor deposition(PCVD) and alternating $C_3N_4$/TiN composite films by dc magnetron sputtering. X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the structure of the films is amorphous or polycrystalline, depending on deposition conditions and heat treatment. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed the presence of $sp_3\; and sp _2$ hybridized C atoms bonded with N atoms in the tetrahedral and hexagonal configurations, respectively. Graphite-free $C_3N_4$ films were obtained by PCVD under optimal conditions. To prepare well crystallized $C_3N_4$ films by magnetron sputtering, we introduced negatively biased gratings in the sputtering system. CN films deposited at grating voltages (Vg) lower than 400V are amorphous. Crystallites of cubic and $\beta$-$C_3N_4$ were formed at increased voltages.

• The Korean Journal of Pesticide Science
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• v.4 no.3
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• pp.15-18
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• 2000

A series of N-{2,4-dichloro-5-(3-pyrazolyl)Phenyl}imides 7 and 8 was prepared and evaluated their herbicidal activities. Those compounds in which either carboxylate or carboxamide moiety is on pyrazole moiety 7c-71 showed no herbicidal activity whereas, the compounds in which trifluoromethyl group is substituted in pyrazolyl moiety showed moderate herbicidal activities against barnyardgrass, monochria and flat-sedge under paddy conditions with good rice tolerance at rate 63-250 g/ha.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• Journal of the Korean Chemical Society
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• v.39 no.7
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• pp.530-537
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• 1995

The neutral complexes $MCl_3(phda)(MeCN)]$ and $[MCl_3(PPh_3)_2(MeCN)]$ (M=Mo, V) were prepared by the reaction of $MCl_z$, (M=Mo; z=5, M=V; z=3) with N, P-donating ligands in acetonitrile solution. Addition of AgClO_4$ to these neutral monomeric complexes in acetone solution afforded $MCl_{3-n}L_2(MeCN)(S)_n](ClO_4)_n$ (n=1, 2 : s=solvent). Two types of asymmetrical homo- and hetero-dinuclear complexes have been synthesized. The type of chloride bridged dinuclear complex is $[(MeCN)(phda)ClM({\mu}-Cl)_2M'Cl(PPh_3)_2(MeCN)](ClO_4)_2.$ And the type of pyrazine bridged complex is $[(MeCN)(phda)Cl_2M({\mu}-pyz)M'Cl_2(PPh_3)_2(MeCN)](ClO_4)_2.$ These complexes were characterized by elemental analysis, $^1H,\;^13C$ NMR, IR, Far-IR and UV-Vis spectroscopy.

• The KIPS Transactions:PartA
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• v.10A no.6
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• pp.627-634
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• 2003

In this paper, we consider a graph-theoretic problem,, the so-called "graph embedding problem" that maps the vertices and edges of the given guest graph model into the corresponding vertices and paths of the host graph under the condition of maintaining better performance parameters such as dilation, congestion, and expansion. We firstly propose a new mapping function which can embed the pyramid model with height N into the 3-dimensional mesh massively parallel processor system with the height $(4^{(N+1)/3}+2)/3$ and the regular 2-dimensional mesh of one side $2^{(2N-1)/3}$, and analyze the performance of the embedding in terms of the dilation parameter that reflects the number of communication steps between two adjacent vertices under the embedding. We prove that the dilation of the embedding is $2{\cdot}4^{(N-2)/3}+4)/3$. This is superior to the previous result of $4^{N+183}+2)/3$ under the same condition.condition.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).