• 조명전기설비학회논문지
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• 제16권1호
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• pp.106-113
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• 2002

본 연구는 방전쳄버내에 각종 가스의 압력(58.8-137.3[kPa]) 변화에 따른 순수가스인 Kr, Ar 및 $N_2$가스의 절연 특성을 조사하고, 혼합가스인 Ar/$N_2$및 Kr/$N_2$가스의 절연 특성과 비교하였다. 또한, 실용 백열전구내의 혼합가스에 위한 각종 특성을 조사하였다. 실험 결과, $N_2$가스의 압력변화에 따른 절연 특성은 큰 분자량을 가진 Kr 및 Ar가스에 비하여 증가되었으며, 가스의 압력이 증가됨에 따라 절인파괴전압은 증가되었다. Ar/$N_2$및 Kr/$N_2$가스의 절연파괴전압은 $N_2$가스의 혼합비가 적을수록 감소되었으며, Kr(70%)$N_2$(30%)가스의 코로나개시전압은 Ar(70%)/$N_2$(30%)가스에 비해 증가되었다. 일반 백열전구에 Ar(70%)/$N_2$(30%)가스인 경우에 비해, Kr(70%)/$N_2$(30%)가스에서 광속과 수명이 대략 94[lm] 및 380[hr]으로 증가되었다. 백열전구내의 냉각온도가 20[$^{\circ}C$]일 때 혼합가스 주입압력은 40[$^{\circ}C$])에 비해 대략 13[%] 증가되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권12호
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• pp.599-606
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• 2001

In this paper, the ac breakdown characteristics of pure Ar, Kr and $N_2$ gas with gas pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields were investigated, and the measured values were compared with those In Ar/$N_2$ and Kr/$N_2$ gas mixtures with pressure varying. Summarizing the experimental results, the breakdown voltages of Pure $N_2$gas, under uniform and non-uniform fields, were increased about 4.8 and 1.1 times than those of pure Ar gas, and about 4.4 and 1.2 times than those of pure Kr gas, and the ac breakdown voltage increased with the pressure increasing. The breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of Pure $N_2$ gas. In case of Ar(85%)/$N_2$ (15%) and Ar(70%)/$N_2$ (30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$ (15%) and Kr(70%)/$N_2$ (30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times. Corona inception voltage of Kr(70%)/$N_2$(30%) gas mixtures under non-uniform fields were increased about 1.28 times than those of Ar(70%)/$N_2$ (30%) gas mixtures. In case of practical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$ (30%) gas mixtures were increased about 1.15 and 1.21 times than those of Ar(70%)/$N_2$ (30%) gas mixtures.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2001년도 학술대회논문집
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• pp.187-191
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• 2001

In this paper, the ac breakdown characteristics of Ar/$N_2$and Kr/$N_2$gas mixtures with gas pressure range of 58.8~137.3[kPa] under uniform and non-uniform fields were investigated. Summarizing the experimental results, the breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of pure $N_2$gas. In case of Ar(85%)/$N_2$(15%) and Ar(70%)/$N_2$(30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$(15%) and Kr(70%)/$N_2$(30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times.

• 조명전기설비학회논문지
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• 제15권5호
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• pp.20-27
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• 2001

본 연구에서는 평등 및 불평등 전계하에서 58.8~137.3[kPa]의 가스 압력변화에 따른 순수 Ar 및 $N_2$가스의 교류절연파괴 특성을 조사하였다. 그리고 가스 압력 변화에 따른 Ar/$N_2$ 혼합 가스의 교류절연파괴 특성과 비교하였다. 실험 결과를 요약하면, 평등 및 불평등 전계하에서 순수 $N_2$가스의 압력 변화에 따른 교류절연파괴 특성은 순수 Ar 가스에 비해 약 4.8배 1.1배 증가된 것으로 나타났으며, 압력이 증가됨에 따라 교류절연파괴전압은 증가되었다. Ar/$N_2$혼합 가스의 절연파괴전압은 순수 $N_2$가스의 혼합비가 적을수록 감소되었으며, 혼합 가스 압력이 101.3[kPa]일 때, 순수 Ar 가스에 비해 Ar 가스 혼합 비율이 각각 85[%] 및 70[%] 인 경우, 교류절연파괴전압은 평등 전계하에서는 약 1.5 및 2.1배 증가되었으며, 불평등 전계하에서는 약 1.1 및 1.3배 증가되었다. 또한 불평등 전계하에서 Ar(70%)$N_2$(30%) 혼합 가스의 코로나개시전압은 순수 Ar 가스에 비해 약 1.5배 증가되었다.

• 한국재료학회지
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• 제28권4호
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1744-1746
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• 2001

In this paper, we investigated the breakdown characteristics of Ar, Kr and $N_2$ gas in pure states with pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields, and the measured values are compared with those in Ar/$N_2$ gas mixtures. From these results, the breakdown voltages of $N_2$ gas in uniform field were increased about 4.8 and 4.4 times than those of Ar and Kr gas, respectively. Breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of $N_2$ gas. Breakdown voltages of Ar(70%)/$N_2$(30%) gas mixtures in the pressure of 101.3[kPa] (gap length : 3[mm]) were increased 1.9 times than those of pure Ar gas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.123-124
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• 2011

플라즈마 화학적 기상 증착(plasma enhanced chemical vapor deposition)공정 중 NH3 gas flow rate, RF power, SiH4 gas flow rate을 고정시키고 N2O gas flow rate을 0 sccm부터 250 sccm까지 변화시키는 조건 하에 SiON박막을 증착한 후 그 투과율, 굴절률을 측정하고 분석하였다. N2O gas flow rate조건별 시편들은 증착율을 계산하여 350 nm 두께로 동일하게 SiON을 증착하였고, borofloat위에 SiON을 증착한 샘플은 투과율을, 실리콘기판 위에 SiON을 증착한 샘플로는 굴절률을 측정하였다. 투과율의 경우는 UV/Vis spectrometer를 이용해 633 nm, 1550 nm 두 가지 파장 대 모두에서 N2O gas flow rate이 가장 큰 250 sccm일 때 가장 높은 것을 알 수 있었고 N2O gas flow rate이 낮아질수록 투과율 또한 작아지는 경향을 보였다. 굴절률은 ellipsometer를 이용해 측정하였으며 633 nm 파장에서 N2O gas flow rate가 가장 낮은 0 sccm일 때 굴절률이 가장 큰 값을 가지고 N2O gas flow rate이 커질수록 굴절률은 지수함수적으로 감소되었다(n=1.837~1.494). 이는 N2O gas flow rate이 낮을수록 SiN계열에 커질수록 SiO2계열에 가까워지는 현상으로 이해된다. 이러한 실험분석 결과는 향후 실리카 도파로의 설계 및 최적화를 위해 사용될 수 있다.

• 한국세라믹학회지
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• 제30권4호
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• pp.309-315
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• 1993

Gas pressure sintering is a promising process in various densification methods of high strength Si3N4 ceramics. Environmental influences on gas pressure sintering of Si3N4 was investigated with the variationof packing powder, specimen container and N2 gas pressure. The specimens had higher density, larger weight loss and inhomogeneous color in graphite specimen container than in SN26 crucible. The variations of sintering densities in various packing powders (Si3N4, SN26, AlN, BN) were very small but SiC powder was synthesised in graphite crucible with Si3N4 packing powder, aluminium oxynitride compounds were synthesised in SN26 crucible with AlN packing power. Also N2 gas pressure over 20kg/$\textrm{cm}^2$ reduced the densification of Si3N4 in one step-gas pressure sintering. As the result of two step-gas pressure sintering at 700kg/$\textrm{cm}^2$ for 15min., relative density of 99.9% and 3-point bending strength of 1090MPa and dense microstructure of 3~4${\mu}{\textrm}{m}$ grain size were obtained.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.75-79
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• 2015

Ti was deposited on the Al substrate using DC magnetron sputtering with changing the $N_2$ gas for the possible application of a solar absorbing layer. $N_2$ gas ranged from 50 to 75 sccm was systematically applied in the 5 sccm interval and the variation of the absorption rate was investigated. Microstructural examination and elemental analysis indicate that Ti was reacted with $N_2$ gas and formed $TiNO_x$ compound. As compared with the film without any exposure of $N_2$ gas, absorption rate improved by more than 20%. Typically the average absorption of $TiNO_x$ fim with 65% of $N_2$ gas was about 99% in the visible range, and the average absorption was more than 90% in the infrared absorption region respectively.

• 조명전기설비학회논문지
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• 제24권7호
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• pp.41-46
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• 2010

With the improvement of industrial society, high quality electrical energy, simplification of operation and maintenance, and ensuring reliability are being required. Also we request an urgent change from $SF_6$ gas to an environment-friendly gas insulation material. In this paper, the experiments of breakdown characteristics by pressure and gap change of $N_2/O_2$ mixture gas through a GIS (Gas Insulated Switchgear) model were described. This paper reviews basic data of the surface discharge characteristics for Teflon resin in not only pure $N_2$, $N_2:O_2$ mixture gas as being focused on environmentally-friendly insulating gas, but also $SF_6$. Also, insulation characteristics by breakdown voltage and surface discharge voltage of $N_2:O_2$ mixture gas in the experimental chamber were studied.