Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Absorption Rate Variation of TiNOx/Ti/Al Films Depending on N2 Gas Flow Rate

N2 Gas 유량에 따른 TiNOx/Ti/Al 흡수율 변화

  • Kim, Jin-Gyun (Department of Material Engineering, Chungbuk National University) ;
  • Jang, Gun-Eik (Department of Material Engineering, Chungbuk National University) ;
  • Kim, Hyun-Hoo (Department of Display Engineering, Doowon Technical University)
  • 김진균 (충북대학교 재료공학과) ;
  • 장건익 (충북대학교 재료공학과) ;
  • 김현후 (두원공과대학교 디스플레이공학과)
  • Received : 2014.10.27
  • Accepted : 2014.12.29
  • Published : 2015.02.01
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Abstract

Ti was deposited on the Al substrate using DC magnetron sputtering with changing the $N_2$ gas for the possible application of a solar absorbing layer. $N_2$ gas ranged from 50 to 75 sccm was systematically applied in the 5 sccm interval and the variation of the absorption rate was investigated. Microstructural examination and elemental analysis indicate that Ti was reacted with $N_2$ gas and formed $TiNO_x$ compound. As compared with the film without any exposure of $N_2$ gas, absorption rate improved by more than 20%. Typically the average absorption of $TiNO_x$ fim with 65% of $N_2$ gas was about 99% in the visible range, and the average absorption was more than 90% in the infrared absorption region respectively.

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