• Proceedings of the Korean Nuclear Society Conference
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• 2001.10a
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• pp.316.2-316
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• 2001

• Proceedings of the Korean Nuclear Society Conference
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• 2002.10a
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• pp.385.1-385
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• 2002

• ETRI Journal
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• v.32 no.3
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• pp.406-413
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• 2010

In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back-bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back-bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back-bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of -0.85 $mV/^{\circ}C$, and its static current consumption is found to be only 0.83 ${\mu}A$@2.0 V.

• Journal of the Korean Chemical Society
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• v.67 no.5
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• pp.348-352
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• 2023

p97, a universally conserved AAA+ ATPase, holds a central position in the ubiquitin-proteasome system, orchestrating myriad cellular activities with significant therapeutic implications. This protein primarily interacts with a diverse set of adaptor proteins through its N-terminal domain (NTD), which is structurally located at the periphery of the D1 hexamer ring. While there have been numerous structural elucidations of p97 complexed with adaptor proteins, the stoichiometry has remained elusive. In this work, we present the crystal structure of the p97-N/D1 hexamer bound to the FAF1-UBX domain at a resolution of 3.1 Å. Our findings reveal a 6:6 stoichiometry between the p97 hexamer and FAF1-UBX domain, deepening our understanding from preceding structural studies related to p97-NTD and UBX domain-containing proteins. These insights lay the groundwork for potential therapeutic interventions addressing cancer and neurodegenerative diseases.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.11-12
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• 2005

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.113-114
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• 2005

• Journal of Power Electronics
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• v.17 no.2
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• pp.358-367
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• 2017

This paper presents a novel filtering method for speed measurements to improve the low-speed performance of the direct-drive permanent magnet traction machines for elevators. Based on the theory of nonlinear tracking differentiator (NTD), this method, which can act as a high performance filter of a raw speed signal, obtains a more accurate speed feedback signal when applying a low-resolution encoder. In addition, it can relieve the interference caused by the position derivative for speed sampling. By analyzing the frequency response of the NTD, the influence of its parameters on the performance of the speed filtering is investigated. Compared with different types of low-pass filters, the proposed method shows a shorter time delay and a stronger ability in terms of noise suppression when the parameters are selected carefully. In addition, when using the measured speed signal through a nonlinear tracking differentiator as the feedback of the system, the motor runs more steadily at low speeds. As a result, the riding comfort of a direct-drive elevator can be improved. The feasibility of the proposed strategy was verified on an 11.7kW elevator traction machine using a commercial inverter.

• Journal of the Korean Magnetic Resonance Society
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• v.17 no.1
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• pp.59-66
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• 2013

BldD, a developmental transcription factor from Streptomyces coelicolor, is a homodimeric, DNA-binding protein with 167 amino acids in each subunit. Each monomer consists of two structurally distinct domains, the N-terminal domain (BldD-NTD) responsible for DNA-binding and dimerization and the C-terminal domain (BldD-CTD). In contrast to the BldD-NTD, of which crystal structure has been solved, the BldD-CTD has been characterized neither in structure nor in function. Thus, in terms of structural genomics, structural study of the BldD-CTD has been conducted in solution, and in the present work, mainchain NMR assignments of the recombinant BldD-CTD (residues 80-167 of BldD) could be achieved by a series of heteronuclear multidimensional NMR experiments on a [$^{13}C/^{15}N$]-enriched protein sample. Finally, the secondary structure prediction by CSI and TALOS+ analysis using the assigned chemical shifts data identified a ${\beta}-{\alpha}-{\alpha}-{\beta}-{\alpha}-{\alpha}-{\alpha}$ topology of the domain. The results will provide the most fundamental data for more detailed approach to the atomic structure of the BldD-CTD, which would be essential for entire understanding of the molecular function of BldD.

• Nuclear Engineering and Technology
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• v.38 no.7
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• pp.675-680
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• 2006

The neutron transmutation doping of silicon (NTD), as a method to produce a high quality semiconductor, utilizes the transmutation of a silicon element into phosphorus by neutron absorption in a silicon single crystal. In this paper, we present the design of a neutron screen for a 6' Si ingot irradiation in the NTD2 hole of HANARO. The goal of the design is to achieve an even flat axial distribution of the resistivity, or $Si^{30}(n,{\gamma})Si^{31}$ reaction rate, in the irradiated Si ingot. We used the MCNP4C code to simulate the neutron screen and to calculate the reaction rate distribution in the Si ingot. The fluctuations in the axial distribution were estimated to be within ${\pm}2.0%$ from the average for the final neutron screen design; thus, they satisfy the customers' requirement for uniform irradiation. On the other hand, we determined the optimal insertion depths of the Si ingots by varying the critical control rod position, which greatly affects the axial flux distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.62-66
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• 2002

The conventional floating zone(FZ) crystal and Czochralski(CZ) silicon crystal have resistivity variations longitudinally as well as radially The resistivity variations of the conventional FZ and CZ crystal are not conformed to requirement of dopant distribution for power devices and thyristors. These resistivity variations in conventional cystals limits the reverse breakdown voltage that could be achieved and forced designers of high power diodes and thyristors to compromise the desired current-voltage characteristics. So to produce high Power diodes and thyristors, Neutron Transmutation Doping(NTD) technique is the one method just because NTD silicon provides very homogeneous distribution of doping concentration. This procedure involves the nuclear transmutation of silicon to phosphorus by bombardment of neutron to the crystal according to the reaction $^{30}$ Si(n,${\gamma}$)longrightarrow$^{31}$ Silongrightarrow(2.6 hr)$^{31}$ P+$\beta$$^{[-10]}$ . The radioactive isotope $^{31}$ Si is formed by $^{31}$ Si capturing a neutron, which then decays into the stable $^{31}$ P isotope (i.e., the donor atom), whose distribution is not dependent on the crystal growth parameters. In this research, neutron was irradiated on FZ silicon wafers which had high resistivity(1000~2000 Ω cm), for 26 and 8.3hours for samples of HTS-1 and HTS-2, and 13, 3.2, 2.0 hours for samples of IP-1, IP-2 and IP-3, respectively, to compare resistivity changes due to time differences. The designed resistivities were approached, which were 2.l Ωcm for HTS-1, 7.21 Ω cm for HTS-2, 1.792cm for IP-1, 6.83 Ωcm for IP-2, 9.23 Ωcm for IP-3, respectively. Point defects were investigated with Deep Level Transient Spectroscopy(DLTS). Four different defects were observed at 80K, 125K, 230K, and above 300K.