• Title/Summary/Keyword: NH3 Plasma

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A Study on a Combined DeNOx Process of Plasma Oxidation and $NH_3$ SCR for Diesel Engine (플라즈마 산화와 암모니아 SCR 복합탈질공정의 엔진적용 연구)

  • Song, Young-Hoon;Lee, Jae-Ok;Cha, Min-Suk;Kim, Seock-Joon;Ryu, Jeong-In
    • Journal of the Korean Society of Combustion
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    • v.12 no.4
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    • pp.39-46
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    • 2007
  • The technique of $NH_3$ SCR (selective catalytic reduction) assisted by plasma oxidation has been applied to a 2,000 cc diesel engine. The present combined $deNO_x$ process consists of two steps. The first step is that about 50% of emitted NO from the engine is oxidized to $NO_2$ in a plasma oxidation process. The second step is that NO and $NO_2$ are simultaneously reduced to $N_2$ in the $NH_3$ SCR process. The engine test results showed that the $deNO_x$ rates of the present combined process are higher than those of conventional SCR process by 20%. Such a high performance of the combined process is noticeable especially, when the exhaust temperature are relatively low, i.e., $170-220^{\circ}C$. To provide a feasibility of the present technique the effects of operating conditions, such as an electrical input energy, an exhaust gas temperature, an initial NO concentration, and the amount of hydrocarbon addition, were discussed.

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The effect of H2O, NH3 and applied voltage to the particle conversion in the desulfurization system using a nano-pulse plasma (나노펄스 플라즈마를 이용한 탈황 시스템의 H2O 및 NH3, 펄스 인가전압에 따른 입자변환 분석)

  • Kim, Younghun;Shin, Dongho;Lee, Gunhee;Hong, Keejung;Kim, Hak-Joon;Kim, Yong-Jin;Han, Bangwoo;Hwang, Jungho
    • Particle and aerosol research
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    • v.16 no.1
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    • pp.1-8
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    • 2020
  • Nano-pulse plasma technology has great potential as the process simplicity, high efficiency and low energy consumption for SO2 removal. The research on the gas-to-particle conversion is required to achieve higher efficiency of SO2 gas removal. Thus, we studied the effect of the relative humidity, NH3 concentration and applied voltage of the nano-pulse plasma system in the gas to particle conversion of SO2. The particles from the conversions were increased from 10 to 100 nm in diameter as relative humidity, NH3 concentration, applied voltage increases. With these results, nano-pulse plasma system can be used to more efficient removal of SO2 gas by controlling above parameters.

Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD) (MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착)

  • Yoon, Su-Jong;Kim, Tae-Gyu
    • Journal of the Korean institute of surface engineering
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    • v.41 no.2
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    • pp.43-47
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    • 2008
  • Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

Synthesis of N-doped Ethylcyclohexane Plasma Polymer Thin Films with Controlled Ammonia Flow Rate by PECVD Method

  • Seo, Hyunjin;Cho, Sang-Jin;Boo, Jin-Hyo
    • Applied Science and Convergence Technology
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    • v.23 no.1
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    • pp.44-47
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    • 2014
  • In this study, we investigated the basic properties of N-doped ethylcyclohexene plasma polymer thin films that deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) method with controlled ammonia flow rate. Ethylcyclohexene was used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia ($NH_3$) gas was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, UV-Visible spectroscopy, and water contact angle measurement. We found that with increasing plasma power, film thickness is gradually increased while optical transmittance is drastically decreased. However, under the same plasma condition, water contact angle is decreased with increasing $NH_3$ flow rate. The FT-IR spectra showed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

Effect of $NH_3$ on the Synthesis of Carbon Nanotubes Using Thermal Chemical Vapor Deposition

  • Cho, Hyun-Jin;Jang, In-Goo;Yoon, So-Jung;Hong, Jin-Pyo;Lee, Nae-Sung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1219-1224
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    • 2006
  • This study investigates the effect of $NH_3$ gas upon the growth of carbon nanotubes (CNTs) using thermal chemical vapor deposition. It is considered that the CNT synthesis occurs mainly through two steps, clustering of catalyst particles and subsequent growth of CNTs. We thus introduced $NH_3$ during either an annealing or growth step. When $NH_3$ was fed only during annealing, CNTs grew longer and more highly crystalline with diameters unchanged. An addition of $NH_3$ during growth, however, resulted in shorter CNTs with lower crystallinity while increased their diameters. Vertically aligned, highly populated CNT samples showed poor field emission characteristics, leading us to apply post-treatments onto the CNT surface. The CNTs were treated by adhesive tapes or etched back by dc plasma of $N_2$ to reduce the population density and the radius of curvatures of CNTs. We discuss the morphological changes of CNTs and their field emission properties upon surface treatments.

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Investigate Electronic Property of N-doped Plasma-Polymer Thin Films for Applied Biosensors

  • Seo, Hyeon-Jin;Hwang, Gi-Hwan;Nam, Sang-Hun;Ju, Dong-U;Lee, Jin-Su;Yu, Jeong-Hun;Bu, Jin-Hyo;Yun, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.159-159
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    • 2013
  • In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.

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Combined De-NOx Process with $NH_3$ SCR and Non-thermal Plasma Process for Removing NOx and Soot from Diesel Exhaust Gases

  • Chung, Kyung-Yul;Song, Young-Hoon;Oh, Sang-Hoon
    • Journal of Advanced Marine Engineering and Technology
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    • v.27 no.5
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    • pp.657-665
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    • 2003
  • Combined De-NOx Process in which $NH_3$ SCR (Selective Catalytic Reduction) and non-thermal Plasma Process are simultaneously used, has been investigated with a pilot test facility. The pilot test facility treats the combustion flue gases exhausted from a diesel engine that generates 240 kW of electrical power. Test results show that up to 80 % of NOx (NO and NO2) can be removed at 100 - $200^{\circ}C$. None of conventional De-NOx techniques works under such low temperature range. In addition to NOx. the Pilot test results show that soot can be simultaneously treated with the present non-thermal plasma technique. The present pilot test shows that the electrical power consumption to operate the non-thermal plasma reactor is equivalent to 3 - 4 % of the electrical power generated by the diesel engine.

Plasma-Enhanced Atomic-Layer-Deposited SiO2 and SiON Thin Films at Low Temperature (< 300℃) using ICP Type Remote Plasma for 3-Dimensional Electronic Devices (3차원 소자 제작을 위한 ICP Type Remote PEALD를 이용한 저온(< 300℃) SiO2 및 SiON 박막 공정)

  • Kim, Dae Hyun;Park, Tea Joo
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.2
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    • pp.98-102
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    • 2019
  • Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

Carbon Nano-Powder Functionalization and Disperisibility with Plasma Discharge

  • Gang, Yu-Seok;Jeong, Man-Gi;Lee, Deok-Yeon;Song, Seok-Gyun;Kim, Seong-In
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.491-491
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    • 2013
  • A novel plasma system has been developed for 3-dimensional modification of the carbon nano-powders. Improvement of dispersion of these nano materials are studied by plasma discharge, not using chemical modification. The plasma process is considered to great advantages over wet chemical process due to environmental, economic viewpoint, and uniformity over the treated volume. The uniform dispersion is a critical factor for these material's nano composite applications. Using this plasma system, graphene, carbon black, and CNT was treated and functionalized. Several key discharge conditions such as Ar/H2/O2 or Ar/H2/NH3 gas ratio, treatment time, power, feeder's vibration frequency are investigated. Hydrophobic of graphene has turned some more into hydrophilic by reaction test with water, electrophoresis, surface contact angle test, and turbidity analysis. The oxygen content ratio in the plasma treated CNT has increased about 3.7 times than the untreatedone. In the case of graphene and carbon black, the oxygen- and nitrogen- content has been enhanced average 10%. O-H (N-H) peak, C-O (C-N) peak, and C=O (C=N) peak data have been detected by FTIR measurement and intensified compared to before-plasma treatment due to O2 or NH3 content.

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Characteristics of Low Temperature De-NOx Process with Non-thermal Plasma and NH3 Selective Catalytic Reduction (II) (저온 플라즈마 및 암모니아 선택적 환원공정을 활용한 저온 탈질공정의 특성(II))

  • Lee, Jae-Ok;Song, Young-Hoon
    • Applied Chemistry for Engineering
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    • v.17 no.4
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    • pp.414-419
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    • 2006
  • Effects of water vapor, hydrocarbons, and CO, which are inevitably included in exhaust gases of combustion, on a combined $De-NO_{x}$ process of non-thermal plasma and $NH_{3}$ SCR (Selective Catalytic Reduction) have been investigated. Test results showed that fast SCR reaction enhanced $De-NO_{x}$ rate under the low temperature conditions, $150{\sim}200^{\circ}C$ The present test, however, showed that the role of the fast SCR reaction can be significantly suppressed by addition of hydrocarbons in a non-thermal plasma reactor. Detailed investigation verified that such suppressed role of the fast SCR reaction could be caused by the $NO_{2}/NO_{x}$ ratio modified by aldehydes produced from hydrocarbons in a non-thermal plasma reactor. In addition, the present study was confirmed that the effects of water vapor and CO were not noticeable compared with the hydrocarbon effects.