• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Fisheries and Aquatic Sciences
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• v.24 no.7
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• pp.260-275
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• 2021

Aquaponics is a cultivation system that combines aquaculture and agricultural hydroponics. This study investigated the productivity of leafy vegetables cultivated in the hybrid biofloc technology-aquaponics (HBFT-AP) using Japanese eel fed two kinds of diets (Mash, commercial powdered feed and extruded pellet [EP]) and hydroponics (HP).The mash was fed to the fish in a type of a dough mixed with water for 6 weeks (Exp1) and switched to the EP containing 2.7% monobasic potassium phosphate (MKP) for subsequent 6 weeks (Exp2). Leafy vegetables of 8 cultivar were employed in the experiment and water quality [dissolved oxygen (DO, mg/L), pH, water temperature (℃), electrical conductivity (EC; ㎲/cm), turbidity (NTU), TAN (NH₃ + NH₄⁺) (mg /L), NO₂-N (mg/L), NO₃-N (mg/L) and PO₄-P (mg/L)] was measured 6 times a week. Leafy vegetable productivity (HBFT-AP vs HP) was compared in respective experiment, which was similar or somewhat higher in HBFT-AP. During the 12-week feeding trial, concentrations of nitrite (NO₂-N) and phosphorus (PO₄-P) were kept low in variability while total ammonia nitrogen (TAN) and NO₃-N levels increased with time in HBFT-AP. At the end of two feeding trials, values of weight gain (WG, %), feed efficiency (FE, %), specific growth rate (SGR, %) and protein efficiency ratio (PER) were higher in Exp2 than in Exp1. As well, higher values in hematocrit (PCV, %), plasma K (mEq/L) and inorganic phosphorus (mg/dL) were found (p < 0.05) in Exp2 where fish were fed the EP (EP: 38.60%, 2.80 mEq/L and 7.04 g/dL; Mash: 33.20%, 1.95 mEq/L and 5.50 g/dL). Leafy vegetables in HBFT-AP using Japanese eel fed the EP with MKP 2.7% had a productivity similar (4 kinds of cultivar) or somewhat higher (4 kinds of cultivar) compared to those in HP. Also, Japanese eel fed the EP showed higher values of Pi (m/dL) and K (mEq/L) in plasma compared to those fed commercial powder diet.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.149-149
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• 2010

The double-layer antireflection (DLAR) coatings have significant advantages over single-layer antireflection (SLAR) coatings. This is because they will be able to cover a broad range of the solar spectrum which would enhance the overall performance of solar cells. Moreover films deposited at high frequency are expected to show excellent and UV-stable passivation in the refractive index that we adopted. In this work, we present a novel DLAR coating using SiNx:H thin films with refractive indices 1.9 and 2.3 as the top and bottom layers. This approach is cost effective when compared to earlier DLAR coatings with two different materials. SiNx:H films were deposited by Plasma enhanced chemical vapor deposition (PECVD) technique using $SiH_4$, $NH_3$ and $N_2$ gases with flow rates 20~80sccm, 200sccm and 85 sccm respectively. The RF power, plasma frequency and substrate temperature for the deposition were 300W, 13.56 MHz and $450^{\circ}C$, respectively. The optimum thickness and refractive indices values for DLAR coatings were estimated theoretically using Macleod simulation software as 82.24 nm for 1.9 and 68.58 nm for 2.3 respectively. Solar cells were fabricated with SLAR and DLAR coatings of SiNx:H films and compared the cell efficacy. SiNx:H> films deposited at a substrate temperature of $450^{\circ}C$ and that at 300 W power showed best effective minority carrier lifetime around $50.8\;{\mu}s$. Average reflectance values of SLAR coatings with refractive indices 1.9, 2.05 and 2.3 were 10.1%, 9.66% and 9.33% respectively. In contrast, optimized DLAR coating showed a reflectance value as low as 8.98% in the wavelength range 300nm - 1100nm.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.215-219
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• 2008

The bonding structure and composition of silicon nitride (SiNx) films were investigated by using Fourier transform infrared spectroscopy (FT-IR). SiNx films were deposited on Si substrate at $340^{\circ}C$ using a conventional PECVD system. The compositions of Si and N in SiNx films were confirmed by using Rutherford backscattering spectroscopy (RBS) and photoluminescence (PL) analysis. The surface morphology of SiNx films was also analyzed by using atomic force microscopy (AFM). It was found that the contents of NH(at. %) is the reverse related with those of SiH corresponding to the result of FT-IR. we conclude that a quantitative analysis on SiNx films can be possible through a precise detection of the contents of H in SiNx films with a FT-IR analysis only.

• Asian-Australasian Journal of Animal Sciences
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• v.26 no.7
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• pp.961-970
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• 2013

Eight multiparous Holstein cows ($569{\pm}47$ kg of BW; $84{\pm}17$ DIM) were used to evaluate the effects of different levels of coarsely ground wheat (CGW) as replacements for ground corn (GC) in diets on feed intake and digestion, ruminal fermentation, lactation performance, and plasma metabolites profiles in dairy cows. The cows were settled in a replicated $4{\times}4$ Latin square design with 3-wk treatment periods; four cows in one of the replicates were fitted with rumen cannulas. The four diets contained 0, 9.6, 19.2, and 28.8% CGW and 27.9, 19.2, 9.6, and 0% GC on dry matter (DM) basis, respectively. Increasing dietary levels of CGW, daily DM intake tended to increase quadratically (p = 0.07); however, apparent digestibility of neutral detergent fiber (NDF) and acid detergent fiber (ADF) were significantly decreased (p<0.01) in cows fed the 28.8% CGW diets. Ruminal pH remained in the normal physiological range for all dietary treatments at all times, except for the 28.8% CGW diets at 6 h after feeding; moreover, increasing dietary levels of CGW, the daily mean ruminal pH decreased linearly (p = 0.01). Increasing the dietary levels of CGW resulted in a linear increase in ruminal propionate (p<0.01) and ammonia nitrogen ($NH_3$-N) (p = 0.06) concentration, while ruminal acetate: propionate decreased linearly (p = 0.03) in cows fed the 28.8% CGW diets. Milk production was not affected by diets; however, percentage and yield of milk fat decreased linearly (p = 0.02) when the level of CGW was increased. With increasing levels of dietary CGW, concentrations of plasma beta-hydroxybutyric acid (BHBA) (p = 0.07) and cholesterol (p<0.01) decreased linearly, whereas plasma glucose (p = 0.08), insulin (p = 0.02) and urea nitrogen (p = 0.02) increased linearly at 6 h after the morning feeding. Our results indicate that CGW is a suitable substitute for GC in the diets of dairy cows and that it may be included up to a level of 19.2% of DM without adverse effects on feed intake and digestion, ruminal fermentation, lactation performance, and plasma metabolites if the cows are fed fiber-sufficient diets.

• Journal of Korean Society of societal Security
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• v.4 no.2
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• pp.65-72
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• 2011

This study was carried out to investigate the cause of acidification of rainwater and to evaluate the possibility of alternative water resource in Saemangeum. The rainwater were collected in the kwangwhal-myun, Saemangeum from March to September, 2009. The collected 7 samples were analyzed with pH meter, IC (ion chromatography) and ICP (inductively coupled plasma) about the pH and the major ions ($SO{_4}^{2-}$, $NO_3{^-}$, $Cl^-$, $Ca^{2+}$, $K^+$, $NH^{4+}$, $Na^+$ and $Mg^{2+}$) of rainwater. The order of the major anion concentration and the acidification contribution in the rainwater was $SO{_4}^{2-}$>$NO_3{^-}$>$Cl^-$, and that of the major cation was $Ca^{2+}$>$K^+$>$NH_4{^+}$>$Na^+$>$Mg^{2+}$. In the initial rainwater, the major ions concentration were higher than the middle period. pH of the rainwater was the lowest at May, but similar to the results of the others. And pH of the rainwater were significant correlation with $SO{_4}^{2-}$ and $Cl^-$ in Saemangeum. From this results, the rainwater was slight acidic, and $SO{_4}^{2-}$ was the main factor contributed to the rainwater acidification in Saemangeum.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.105-114
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• 2001

$Al_2$$O_3$ coatings were deposited on M2 high speed steels by the plasma enhanced chemical vapor deposition (PECVD) process, using a gas mixture of AlC1$_3$, $H_2$, $CO_2$ and Ar $Al_2$$O_3$ coatings had interference color and showed amorphous phase. $A1_2$X$A1_3$/($Ti_{0.5}$ /$Al_{0.5}$ )N double layer coatings were produced in the sequence of substrate $NH_3$ plasma pretreatment, ($Ti_{0.5}$$Al_{0.5}$)N depoition process, $Al_2$$O_3$ deposition process. $Al_2$ $O_3$/( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings showed NaCl structure in ( $Ti_{0.5}$A $l_{0.5}$)N layer and amorphous phase in A1$_2$ $O_3$ layer. It was shown that $Al_2$ $O_3$ columns continuously grew onto ( $Ti_{0.5}$A $l_{0.5}$)N columns. ( $Ti_{0.5}$A $l_{0.5}$)N single coating and $Al_2$ $O_3$/( $Ti_{0.5}$A $l_{0.5}$)N double layer coating were oxidized at $700^{\circ}C$, 80$0^{\circ}C$, 90$0^{\circ}C$ for 1hr, 3hr in atmosphere. At 80$0^{\circ}C$, single layer coatings were oxidized, which were examined substrate oxide particle. But $Al_2$ $O_3$/ ( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings maintained the asdeposited state. Therefore, $Al_2$ $O_3$/ ( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings have moreexcellent oxidation resistance than ( $Ti_{0.5}$A $l_{0.5}$)N single layer coatings.X> 0.5/)N single layer coatings.s.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.180-180
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• 2016

최근 디스플레이 시장의 주요 키워드는 flexible organic light emitting diode (OLED) 이다. OLED 소자의 수명을 결정하는 가장 큰 요인 중의 하나는 공기 중의 O2와 H2O에 의한 유기물의 열화이다. 따라서 공기 중의 O2나 H2O가 유기물에 쉽게 침투하는 것을 막는 것은 소자의 수명 향상을 위하여 필수적이라 할 수 있다[1-3]. SiNx 박막은 경질로 투과성이 우수하며, 화학적 불활성인 특성으로 이러한 Barrier 역할로 연구되어 산업분야에 다양하게 응용되고 있다[4]. SiNx 박막은 일반적으로 plasma enhanced chemical vapor deposition (PECVD) 기술을 이용하여 증착되는데 기존의 PECVD 기술을 이용한 SiNx 박막은 낮은 water vapor transmission rate (WVTR) 등의 문제점들로 인해 한계점이 들어났다. 본 연구에서는, flexible display의 thin film encapsulation (TFE) 공정에서의 적용을 알아보기 위해 $370{\times}470$ size를 증착할 수 있는 In-line 장비를 이용하였으며, 기존의 PECVD 기술의 문제점으로 지적되고 있는 낮은 WVTR을 해결하기 위하여 저온 (<$100^{\circ}C$) 선형 PECVD 기술을 이용하여 WVTR을 개선하고자 하였다. 공정가스로는 SiH4와 NH3를 사용하였으며, SiH4 Carrier 가스로 He을 추가적으로 사용하였다. 또한 공정 압력은 100mTorr를 유지하였다. 증착된 SiNx 박막의 물리적, 화학적 특성 분석을 위해 분광엘립소메타, field emission electron microscopy (FESEM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) 등을 이용하여 측정하였으며, 박막에 투습되는 수분의 양은 MOCON사의 AQUATRAN 2(W)로 측정하였다. OLED 소자를 구현하기 위해서는 기본적으로 봉지층에 투습되는 양을 $10-6g/m2{\cdot}day$ 이하로 막아줘야 한다고 알려져 있으나, 기존의 PECVD 기술을 이용하여 제작된 SiNx 박막의 WVTR은 $10-2{\sim}10-3g/m2{\cdot}day$ 레벨의 WVTR 결과를 보이고 있다. 본 연구에서 사용된 저온 선형 PECVD 기술을 이용하여 제작된 SiNx 박막의 WVTR은 $5.0{\times}10-5g/m2{\cdot}day$ 이하의 개선된 결과를 확인 할 수 있었다. 또한 flexible display에 적용하기 위해 SiNx 박막의 두께를 최소화한 100nm의 두께에서도 WVTR은 $5.0{\times}10-5g/m2{\cdot}day$ 이하의 결과가 유지됨을 알 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.