• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.38-39
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• 2006

We present experimental results that regard the effects of catalyst preparation on the structural and field-emissive properties of CNTs. The CNTs used in this research have been synthesized using the inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Catalyst materials (such as Ni, Co, and Invar 426) are varied and deposited on buffer films by RF magnetron sputtering. Prior to growth of CNTs, $NH_3$ plasma etching has also been performed with varying plasma etching time and power. For all the CNTs grown, nanostructures and morphologies are analyzed using Raman spectroscopy and FESEM, in terms of buffer films, catalyst materials, and pre-treatment conditions. Furthermore, the field electron-emission of CNTs are measured and characterized in terms of the catalyst preparation environments. The CNTs grown on Nicatalyst layer would be more effectual for enhancing the growth rate and achieving the vertical-alignment of CNTs rather than other buffer materials from results of SEM study. The crystalline graphitic structure of CNTs is improved as the catalyst dot reaches a critical size. Also, the field-emission result shows that the CNTs using Ni catalyst would be more favorable for improving electron-emission capabilities of CNTs compared with other samples.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.156-159
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• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2001.05a
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• pp.238-239
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• 2001

The egg-yolk precursor vitellogenin(VTG) is secreted by the liver of female and male fish, in response to estrogenic compound. Carp(Cryprinus carpio) vitellogenin of one major protein is 160kDa, two minor proteins is 110kDa and 170kDa. We were induced vitellogenin by inject of 17-estradiol and purified in a two step procedure by separating it from plasma protein precipitated by 35% saturated ${(NH_4)}_2SO_4$ and then from the remainder by Mono-Q chromatography. We found major carp(Cyprinus carpio) vitellogenin band at 160kDa. Effect of different concentration of oestrogen on vitellogenin synthesis in carp(Cyprinus carpio) exposed for 4 weeks. Show differential effects on vitellogenin synthesis 7 days after treatment. Plasma vitellogenin was measured 3 times for each by an enzyme linked immunosorbent assay(ELISA). ELISA was developed for the detection of the egg yolk precursor vitellogenin in plasma of carp(Cyprinus carpio). The ELISAS performance was optimized and characterized.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.278.2-278.2
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• 2013

그래핀은 우수한 전기적, 기계적, 광학적 특성들로 인하여 전자소자, 센서, 에너지 재료 등으로의 응용이 가능하다고 알려진 단 원자층의 탄소나노재료이다. 특히 그래핀을 전자소자로 응용하기 위해서는 캐리어 농도, 전하 이동도, 밴드갭 등의 전기적 특성을 향상시키거나 제어하는 것이 요구되며, 에너지 소재로의 응용을 위해서는 높은 전기전도도와 함께 기능화를 통한 촉매작용을 부여하여 효율을 향상시키는 것이 요구된다. 일반적으로 화학적 도핑은 그래핀의 전기적 특성을 제어하는 효율적인 방법으로 알려져 있다. 화학적 도핑의 방법으로 질소, 수소, 산소 등 다양한 이종원소를 열처리 또는 플라즈마 처리함으로써 그래핀을 구성하는 탄소원자를 이종원자로 치환하거나 흡착시켜 기능화 처리된 그래핀을 얻는 방법들이 제시되었다. 이중 플라즈마를 이용한 도핑방법은 저온에서 처리가 가능하고, 처리시간, 공정압력, 인가전압 등 플라즈마 변수를 변경하여 도핑정도를 비교적 수월하게 제어할 수 있다는 장점을 가지고 있다. 본 연구에서는 열화학기상증착법으로 합성된 그래핀을 직류 플라즈마로 처리함으로써 효율적인질소도핑 조건을 도출하고자 하였다. 그래핀의 합성은 200 nm 두께의 니켈 박막이 증착된 몰리브덴 호일을 사용하였으며, 원료가스로는 메탄을 사용하였다. 그래핀의 질소 도핑은 평행 평판형 직류 플라즈마 장치를 이용하여 암모니아($NH_3$) 플라즈마로 처리하였으며, 플라즈마 파워와 처리시간을 변수로 최적의 도핑조건 도출 및 도핑 정도를 제어하였다. 그래핀의 질소 도핑 정도는 라만 스펙트럼의 G밴드의 위치와 반치폭(Full width at half maximum; FWHM)의 변화를 통해 확인하였다. NH3 플라즈마 처리 후 G밴드의 위치가 장파장 방향으로 이동하며, 반치폭은 감소하는 것을 통해 그래핀의 질소도핑을 확인하였다.

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.155-158
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• 2012

In this work, AlON-$Al_2O_3$ coatings were prepared on Al2021 alloy by the electrolytic plasma processing (EPP) method. The experimental electrolytes include: 2 g/l NaOH as the electrolytic conductive agent, 10 g/l $Na_2AlO_2$ as the alumina formative agent, and 0.5 g/l $NaNO_2$, $NaNO_3$, and $NH_4NO_3$ as the nitride inducing agents. The effects of different nitrogen inducing agents were studied by a combined compositional and structural analyses of the ceramic coatings carried out by Xray diffractometry (XRD) and scanning electron microscopy (SEM) for the specimens EPP-treated at room temperature for 15 min under a hybrid voltage of 260 DC along with an AC 50 Hz power supply (200 V). Microhardness tests and wear tests were carried out to correlate the evolution of the microstructure and the resulting mechanical properties. Potentiodynamic polarizations and immersion corrosion tests were carried out in 3.5wt% NaCl water solutions under static conditions in order to evaluate the corrosion behavior of the coated samples. The results demonstrate that $NaNO_2$ is proven to be a good nitrogen inducing agent to produce high quality AlON-$Al_2O_3$ ceramic coatings.

• Analytical Science and Technology
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• v.25 no.5
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• pp.265-272
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• 2012

Okamoto cavity was modified to generate high power (2.45 GHz, 2 kW) He, N2 and Ar plasmas with WR-340 waveguide. Many factors which influence to the plasma generation were optimized and investigated for the spectroscopic properties of the He plasma generated. Some of the important factors are the diameter of the inner conductor, the distance between the inner and outer conductors and the distance between the tip of the inner conductor and the torch. After optimization for the He, two torches (a commercial mini torch for ICP and a tangential flow torch made locally) were compared and showed similar results for the helium plasma gas flow of 25 L/min~30 L/min. A tall torch (extended) was used to block the air in-flow and reduced the background intensity at 340 nm region (NH band). Emission intensity was measured for determination of halogen element in the aqueous solution with power and carrier gas flow rate. Electron number density and the excitation temperature were on the order of $3.67{\times}10^{11}/cm^3$ and 4,350 K, respectively. These values are similar or a bit smaller than other microwave plasmas. It has been possible to analyze aqueous samples. The detection limit for Cl (479.45 nm) was obtained to be 116 mg/L and needs analytical optimization for the better performance.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• Analytical Science and Technology
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• v.27 no.6
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• pp.352-356
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• 2014

Various studies have been done to improve the properties of the steel by adding boron to the steel. Some studies have reported on the analysis of the boron in steel by AAS (atomic absorption spectrometry), ICP-OES(inductively coupled plasma-optical emission spectrometry), ICP-MS (inductively coupled plasma/mass spectrometry). The volatile loss of boron of steel in sample digestion and the separation procedure for avoiding matrix effect by high concentration of iron are difficulties for determination of boron in steel. The method to determine boron in steel by ICP-MS was developed without volatilization of boron in sample digestion step with $HNO_3-NH_4HF_2$ digestion method, and the additional separation process for avoiding matrix effect. Complete decomposition of steel with $HNO_3-NH_4HF_2$ digestion method, and boron determination by ICP-MS in the matrix of high concentration of iron were possible. Quantitative recoveries of boron in certified standard steel by new method in this study were 103 to 111%, and the relative standard deviation is less than 5%. The method detection limit was $1.17{\mu}g/g$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.