• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.7
• /
• pp.1-6
• /
• 2000

In this study, the effects of the addition of $N_2$ gas into the $Cl_2$ (90)/Ar(10) gas mixture, which has been proposed as the optimized etching gas combination, for etching of platinum was performed. The selectivity of platinum film to $SiO_2$ film etch mask increased with the addition of $N_2$ gas, and etch profile over 75 $^{\circ}$ could be obtained when 20 % additive $N_2$ gas was added. These phenomena were interpreted as the results of a formation of blocking layer such as Si-N or Si-O-N on the $SiO_2$ mask. The maximum etch rate of Pt film and selectivity of Pt to $SiO_2$ are 1425 ${\AA}$/min and 1.71, respectively. These improvements were considered to be due to the formation of more volatile compounds such as Pt-N or Pt-N-Cl.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1919-1921
• /
• 1999

AlN thin films were fabricated by sputter for the application of MIS device with Al/AlN/Si structure. We controled that sub-temperature room-temperature. Sputtering pressure 5 mTorr, flow ratio Ar:$N_2$=1:1(4sccm:4sccm), and appended hydrogen gas $0{\sim}5%$. AlN thin films thickness fabricated to maintain $2700{\AA}$ time control. Before the experiment remove to the contaminated material use the Ultrasonic every 10 minute use the acetone and ethanol, then use the HF remove oxide-substance at 10 second. To analyze characteristic of the $H_2$ gas addition period, C-V and I-V characteristic make and experiment $H_2$ gas at addition period progressive capability of I-V and C-V characteristic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.10
• /
• pp.1056-1060
• /
• 2004

In this study, 0.96B $i_{0.5}$($Na_{0.84}$ $K_{0.16}$)$_{0.5}$Ti $O_3$ + 0.04SrTi $O_3$ + 0.3 wt% N $b_2$ $O_{5}$+0.2 wt% L $a_2$ $O_3$ + xwt % Mn $O_2$ were investigated as a function of the amount of Mn $O_2$ addition in order to improve dielectric and piezoelectric properties of Lead-free piezoelectric ceramics. With increasing the amount of Mn $O_2$ addition, the density, electromechanical coupling factor( $k_{p}$), piezoelectric constant( $d_{33}$, $g_{33}$) and curie temperature (Tc) showed the maximum value of 5.7 g/㎤, 38 %, 219 pC/N, 26 mVㆍm/N and 32$0^{\circ}C$ at 0.1 wt% Mn $O_2$ addition, respectively, and mechanical quality factor( $Q_{m}$ ) showed the maximum value of 158 at 0.3 wt% Mn $O_2$ addition.ddition.ion.n.

• Journal of the Korean Chemical Society
• /
• v.13 no.4
• /
• pp.297-302
• /
• 1969

The activation parameters for the nucleophilic addition reactions of n-propyl-, n-butyl-, n-amyl-and n-hexyl-mercaptan to 3, 4-methylene-dioxy-${\beta}$-nitrostyrene were determined at pH 5.8 and pH 2.0, and also the isokinetic temperature of the reactions at pH 5.8 was obtained numerically 262${\circ}$K, and at pH 2.0, 17.1${\circ}$K. From the values obtained above, the fact that the mercaptan having the longer carbon chain has the greater nucleophilicity of it in the addition reactions has been discussed by the extrathermodynamic analysis of ${\Delta}H^{\neq}$and ${\Delta}S^{\neq}$.

• Korean Journal of Materials Research
• /
• v.9 no.5
• /
• pp.496-502
• /
• 1999

In this study, n-GaN samples were etched using planar inductively coupled $Cl_2$/$H_2$plasmas and the effects of plasma conditions on the etch properties, surface composition, and ohmic contact formation were investigated as a function of gas combination. As the addition of hydrogen to the $Cl_2$plasma increased to 100%, GaN etch rates decreased due to the reduction of chlorine radical density. Even though the variation of the surface composition is limited under $50\AA$, the surface composition was also changed from Ga-rich to N-rich with the increased addition of hydrogen to $Cl_2$. Etch products by the reaction between Ga in GaN and Cl in $Cl_2$ plasma were investigated using OES analysis during the GaN etching. The value of specific resistivity of the contact formed on the n-GaN etched using 100% $Cl_2$plasma was 3.1$\times$10\ulcorner$\Omega$$\textrm{cm}^2$, and which was lower than that formed on the non-etched n-GaN. However, the resistively was increased with the increased hydrogen percent in $Cl_2$/$H_2$.

• Journal of the Korean Wood Science and Technology
• /
• v.49 no.4
• /
• pp.315-327
• /
• 2021

Purpose of this study is reviewing the use method for the sawdust (sawmilling by-product) and rice husk (Agriculture by-product) by adding charcoal, an eco-friendly material. Mixed composite boards were manufactured with those materials with each density and mixing ratio, and bending performance was investigated. When the addition ratio of sawdust, rice husk and charcoal is 50:20:20 and the resin addition ratio is 10%, as the density of the prepared mixed board ranges from 0.5 g/cm³ to 0.7 g/cm³, the bending strength was 0.42~3.24 N/mm², dynamic modulus of elasticity was 94.5~888.4 N/mm², and the static modulus of elasticity was in the range of 31.4~220.7 N/mm². As the density increased, the bending performance increased, indicating that the density had a significant effect on the bending performance. In a board prepared by setting the density of 0.6 g/cm³, the addition ratio of sawdust to 50%, and the addition ratio of rice husk and charcoal at different ratios, the bending performance showed a tendency to decrease as the addition ratio of charcoal increased. The relationship between the addition ratio of rice husk and charcoal, bending strength, resonance frequency, and dynamic and static bending modulus showed a rather low correlation with the values of the coefficient of determination (R²) of 0.4562, 0.4310, 0.4589, and 0.5847, respectively. Thus, we found that the effect of the addition ratio on the bending performance was small.

• Journal of the Korean Applied Science and Technology
• /
• v.12 no.2
• /
• pp.85-92
• /
• 1995

The rate constant of the nucleophilic addition of 1-propanethiol to ${\alpha}-phenyl-N-iso-propylnitrone$ derivatives were determined at various pH and a rate equation which can be applied over wide pH range is obtained. Final product of the addition reaction was ${\alpha}-thiopropyl-p-phenylbenzylideneamine$. Base on the rate equation, general base effect, substituent effect and final product, plausible mechanism of addition reaction have been proposed. Below pH 3.0, the reaction was initiated by the addition of 1-propanthiol, and in the range of pH 3.0-10.0, proceeded by the competitive addition of 1-propanethiol and propanethiolate. Above the pH 10.0, the reaction proceeded through the addition of propanethiolate.

• Journal of the Korean Ceramic Society
• /
• v.31 no.10
• /
• pp.1089-1098
• /
• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• Journal of the Korean institute of surface engineering
• /
• v.32 no.3
• /
• pp.416-422
• /
• 1999

The characteristics of inductively coupled Cl$_2$/BCl$_3$ plasmas during the GaN etching were studied using plasma mass spectrometry by measuring the relative amounts of reactive ions, neutrals, and etch products. GaN etch rates increased with the increase of pressure and showed a maximum near 25mTorr for the pure $Cl_2$ and near 30mTorr for $Cl_2$$BCl_3$. The addition of$ BCl_3$ to $Cl_2$ also was increased GaN etch rates until 50%BCl$_3$ was mixed to $Cl_2$. The GaN etching with pure $Cl Cl_2$ appears to be related to the combination of Cl$_2^{+}$ ion bombardment and the chemical reaction of Cl radicals. In the case of the GaN etching with Cl$_2$/BCl$_3$, in addition to the combined effect of$_2^{ +}$ ions and Cl radicals, $_BCl2^{+ }$ ions appear to be responsible for some of GaN etching even though they do not have significant effect on the GaN etching compared to $Cl_2^{+}$ and Cl. $Ga^{+ }$ , $GaCl^{+}$ , $GaCl_2^{+}$ , and $N_2^{+}$ were observed as the positive ions of etch products, and the intensities of these etch products showed the same trends as those of GaN etch rate. Among the etch products, Ga and $N_2$ appear to be the main etch products.

• Journal of the Korean Ceramic Society
• /
• v.51 no.5
• /
• pp.498-504
• /
• 2014

Particulate nitride composites have been fabricated by sintering the compacted powder of AlN and 5 - 64.3 mol% $Al_2O_3$, with a small addition of $Y_2O_3$ ($Y_2O_3$/AlN, 1 wt%), in 1-atm nitrogen gas at $1650-1900^{\circ}C$. The composites were characterized in terms of sintering behavior, phase relations, microstructure and thermal shock resistance. AlN, 27R AlN pseudopolytype, and alminium oxynitride (AlON, $5AlN{\cdot}9Al_2O_3$) were found to existin the sintered material. Regardless of batch composition, the AlN-$Al_2O_3$ powder compacts exhibited similar sintering behavior; however, the degree of shrinkage commonly increased with increasing $Al_2O_3$ content, consequently giving high sintered bulk density. By increasing the $Al_2O_3$ addition up to ${\geq}50 mol%$, the matrix phase in the sintered material was converted from AlN or 27R to AlON. Above $1850^{\circ}C$, a liquid phase was formed by the reaction of $Al_2O_3$ with AlN, aided by $Y_2O_3$ and mainly existed at the grain boundaries of AlON. Thermal shock resistance was superior in the sintered composite consisting of AlON with dispersed AlN or AlN matrix phase.