• Proceedings of the Korean Environmental Health Society Conference
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• 2002.04a
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• pp.84-90
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• 2002

In 1995 we licensed pyrolysis gas melting technology of indirect heating type (using kiln) from Siemens AG, and built its demonstration facility in 1998 at Clean-Park-East of Fukuoka City to demonstrate the technology for municipal solid waste (MSW). In 1997 we were awarded an order from Kanemura Co., Ltd. to build a pyrolysis gas melting and power generation plant, specifically for treating residue from car shredder. The latter was launched in 1998, and is currently in commercial operation. The operation of these plants have proven the following facts. (1) The system is capable for performing a stable operation with a wide variety of waste. (2) Pyrolysis is achieved steadily regardless of the variation in the quality of waste. (3) The system can be operated under low excess air ratio (1.2∼1.3). (4) The concentration of dioxins at the furnace outlet is 0.062ng-TEQ/㎥$\_$N/, and 0.002ng-TEQ/㎥$\_$N/, at the stack. (the value is corrected to dryO$_2$ 12％) (5) The purity of recovered metals exceeds 90%.

• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.143-151
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• 2008

This paper presents the operation of Fuel Cell Distributed Generation(FCDG) systems in distribution systems. Hence, modeling, controller design, and simulation study of a Solid Oxide Fuel Cell(SOFC) distributed generation(DG) system are investigated. The physical model of the fuel cell stack and dynamic models of power conditioning units are described. Then, suitable control architecture based on fuzzy logic and the neural network for the overall system is presented in order to activate power control and power quality improvement. A MATLAB/Simulink simulation model is developed for the SOFC DG system by combining the individual component models and the controllers designed for the power conditioning units. Simulation results are given to show the overall system performance including active power control and voltage regulation capability of the distribution system.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• 한국HCI학회:학술대회논문집
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• 2006.02a
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• pp.406-412
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• 2006

정보통신 기술의 발달로 근래에는 인터넷 방송 서비스가 활성화되었으며 누구든 자유롭게 방송을 제작하거나 청취할 수 있다. 이러한 인터넷 방송을 이용하기 위해서는 PC 를 이용하는 방법이 일반적이지만 오디오 서비스만을 이용할 경우 불편하다. 본 논문에서는 낮은 사양의 시스템에서 인터넷 방송을 청취하기 위한 하드웨어와 소프트웨어 설계 기법 그리고 효율적인 버퍼링 방법을 제안하였다. 제안된 시스템은 8 비트 마이크로 컨트롤러, 32KB 의 메모리, Hardwired TCP/IP Stack 그리고 Hardwired MP3 디코더를 이용하여 설계하였으며 각 작업간의 스케쥴링을 위하여 타이머 인터럽트를 이용하였다. 16KB의 메모리로 몇 가지 버퍼링 기법을 제안했다. 폴링 방식은 가장 보편적인 방법으로 데이터를 전송받는 작업과 음악을 재생하는 작업이 순차적으로 이루어진다. 이 방법은 데이터 전송과 음악 재생을 동시에 할 수 없기 때문에 타이머 인터럽트를 이용한 버퍼링 모델이 사용된다. 두 번째로 메모리를 두개의 블록으로 나누어 한 블록에는 데이터를 저장하고 다른 한 블록에는 데이터를 내보내는 '더블 버퍼링'을 제안했다. 세 번째는 메모리 블록을 여러 단계로 나눈'n-Queue 버퍼링' 기법을 제안했다. 마지막으로 네트워크 상황에 따라서 블록의 개수를 유동적으로 조절하는 '가변 길이 n-Queue 버퍼링' 기법을 제안했다. 이 방법은 네트워크 상황에 따라 메모리의 크기를 유동적으로 할당하기 때문에 메모리 사용률이 높아지는 장점이 있다. 본 논문에서 제안하는 시스템은 운영체제를 사용하지 않았기 때문에 TV 나 오디오 등 다른 시스템에 이식이 용이하므로 다양한 기기에 적용이 가능하다.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.90-96
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• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.394-399
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• 2000

The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.172-177
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• 2014

We present on a threshold switching device based on AsGeTeSi material which is significantly improved by two $N_2$ processes: reactive $N_2$ during deposition, and $N_2$ plasma hardening. The introduction of N2 in the two-step processing enables a stackable and thermally stable device structure, is allowing integration of switch and memory devices for application in nano scale array circuits. Despite of its good threshold switching characteristics, AsTeGeSi-based switches have had key issues with reliability at a high temperature to apply resistive memory. This is usually due to a change in a Te concentration. However, our chalconitride switches(AsTeGeSiN) show high temperature stability as well as high current density over $1.1{\times}10^7A/cm^2$ at $30{\times}30(nm^2)$ celll. A cycling performance of the switch was over $10^8$ times. In addition, we demonstrated a memory cell consisted of 1 switch-1 resistor (1S-1R) stack structure using a TaOx resistance memory with the AsTeGeSiN select device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.