• 대한전기학회논문지
• /
• 제41권1호
• /
• pp.95-106
• /
• 1992

For commercial application of the MCFC, the life time of the MCFC should exceed 40,000 hours, But the life time of the state-of-the-art MCFC was limited to 15,000 hours. The main reasons of the life time limit can be classified as the deficiency of the electrolyte and cathode dissolution. It has been found that the electrolyte deficiency is caused by the continuous evaporation of the electrolyte. However a recent reaserch shows that an electrolyte pumping phenomenon, which implies, the migration of the electrolyte through the gasket material of the external gas manifold, is also the reason of the electrolyte deficiency. Due to the electrolyte pumping phenomenon, positive end cell of the stack suffers the electrolyte deficiency and negative end cell of stack is flooded with electrolyte. Therefore, the cell performance is degraded. The author invented a new manifoldcasing, which prevents the contact between the wet seal and the gasket of the manifold, and gives a complete elimination of an electrolyte pumping effect.

• 한국자기학회지
• /
• 제18권3호
• /
• pp.98-102
• /
• 2008

수직자기이방성을 갖는 $[Pd/Co]_N$와 $[Pd/Co(CoFe)]_N$/FeMn 다층박막 구조를 이용하여 표면자기이방성 효과와 강자성 물질에 따른 보자력(coecivity, $H_c$)과 교환력(exchange bias, $H_{ex}$)의 변화를 관찰하였다. Ta(2.1 nm)/[Pd(3.1/N)/$Co(1.2/N)]_N$/Ta(2.1) 다층박막의 구조에서 반복층수 증가에 따라 보자력 670 Oe까지 선형적으로 증가하였으며, 교환 결합된 구조에서의 보자력은 물질에 따라 같은 증가 경향의 결과를 얻었다. 강자성 물질에 따른 가장 큰 보자력은 Co(600 Oe) > $Co_5Fe_5$(520 Oe) > $Co_8Fe_2$(320 Oe) 크기를 얻었다. 반면 교환력의 경우 반복 층수가 N=3 일 때 각 물질 모두 300 Oe의 결과 값을 얻었으며, 반복층수 3층 이후에는 $300{\sim}200$ Oe 사이에 거의 일정한 크기를 얻었다.

• 방사성폐기물학회지
• /
• 제15권2호
• /
• pp.173-180
• /
• 2017

본 연구에서는 한국원자력연구원의 핵연료가공시설 굴뚝 내에서 9곳의 시료채취 위치를 선정하여 ANSI/HPS N13.1-1999 지침에서 제시하는 기준에 따라 그 적절성을 평가하였다. 유체를 포함한 다중물리 해석 소프트웨어인 COMSOL을 활용하여 유동교란 지점으로부터 굴뚝 직경의 배수 높이 위치(L/D) 단면에서의 속도분포, 유동각 및 $10{\mu}m$ 크기의 입자분포 등의 항목에 대하여 기준만족 여부를 평가하였다. 평가 결과, 5 L/D 이상에서 속도분포에 대한 기준을 만족했으며, 평균 유동각에 대한 기준은 모든 위치에서 만족했다. 입자분포에 대한 기준은 5 L/D 와 9 L/D 에서 만족하였으나, 그 분포가 일부에서 기준을 만족하지 못하였다. 균일한 입자분포를 얻기 위한 방법으로 굴뚝 내 정적 혼합장치(static mixer)와 둘레링(perimeter ring)을 추가하는 것을 제안하고, 이에 대한 평가를 수행하였다. 정적 혼합장치를 추가한 경우에는 5-10 L/D, 둘레링을 추가한 경우에는 5 L/D 및 7-10 L/D 에서 입자분포에 대한 기준을 만족하였다. 보완을 위하여 추가한 2 가지 조건에서, 입자분포에 대한 기준을 만족하는 지점은 속도분포 및 평균 유동각에 대한 기준 역시 만족하고 있음을 확인하였다. 본 연구에서 사용한 방법은 신규시설뿐만 아니라, 현장입증시험 수행이 어려운 운영중인 시설에 대하여 시료채취 위치의 적절성을 평가하기 위한 방법으로 활용될 수 있다.

• 한국정보과학회 언어공학연구회:학술대회논문집(한글 및 한국어 정보처리)
• /
• 한국정보과학회언어공학연구회 2008년도 제20회 한글 및 한국어 정보처리 학술대회
• /
• pp.156-161
• /
• 2008

This work presents an agenda-based approach to improve the robustness of the dialog manager by using dialog examples and n-best recognition hypotheses. This approach supports n-best hypotheses in the dialog manager and keeps track of the dialog state using a discourse interpretation algorithm with the agenda graph and focus stack. Given the agenda graph and n-best hypotheses, the system can predict the next system actions to maximize multi-level score functions. To evaluate the proposed method, a spoken dialog system for a building guidance robot was developed. Preliminary evaluation shows this approach would be effective to improve the robustness of example-based dialog modeling.

• Korean Membrane Journal
• /
• 제10권1호
• /
• pp.8-12
• /
• 2008

The electrochemical properties of Nafion type membranes as a function of temperature to examine the key factors affecting the cathodic protection process at low temperatures was investigated in this study. Variable temperature experiments for AC impedance, DC resistance were conducted. The resistances of 3 Nafion membranes (N 324, N 450, N MAC) were measured in 30% KOH (aq) for a range of temperatures between $-30^{\circ}C$ and room temperature. Membrane resistance increases exponentially with decreasing temperature. This behaviour is most significant at operational temperatures below $0^{\circ}C$. These membranes are stable under the low temperature and caustic conditions of the heat exchange system, but they place a much higher restriction on the cathodic protection of the stainless heat exchange stack. N 450 has the lowest AC impedence and DC resistance at temperatures below $0^{\circ}C$ and consequently is most suitable membrane of the three, for low temperature applications.

• 한국전기전자재료학회논문지
• /
• 제25권9호
• /
• pp.681-685
• /
• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• ETRI Journal
• /
• 제37권5호
• /
• pp.979-989
• /
• 2015

Recently, Hou and others introduced a (2, n) block-based progressive visual cryptographic scheme (BPVCS) in which image blocks can be gradually recovered step by step. In Hou and others' (2, n)-BPVCS, a secret image is subdivided into n non-overlapping image blocks. When t ($2{\leq}t{\leq} n$) participants stack their shadow images, all the image blocks associated with these t participants will be recovered. However, Hou and others' scheme is only a simple 2-out-of-n case. In this paper, we discuss a general (k, n)-BPVCS for any k and n. Our main contribution is to give two constructions (Construction 1 and Construction 2) of this general (k, n)-BPVCS. Also, we theoretically prove that both constructions satisfy a threshold property and progressive recovery of the proposed (k, n)-BPVCS. For k = 2, Construction 1 is reduced to Hou and others' (2, n)-BPVCS.

• Bulletin of the Korean Chemical Society
• /
• 제35권3호
• /
• pp.929-932
• /
• 2014

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제2권3호
• /
• pp.180-184
• /
• 2002

In this paper, the electrical properties of PVD Ta and $TaN_x$ gate electrodes on $SiO_2$ and their thermal stabilities are investigated. The results show that the work functions of $TaN_x$ gate electrode are modified by the amount of N, which is controlled by the flow rate of $N_2$during reactive sputtering process. The thermal stability of Ta and $TaN_x$ with RTO-grown $SiO_2$ gate dielectrics is examined by changes in equivalent oxide thickness (EOT), flat-band voltage ($V_{FB}$), and leakage current after post-metallization anneal at high temperature in $N_2$ambient. For a Ta gate electrode, the observed decrease in EOT and leakage current is due to the formation of a Ta-incorporated high-K layer during the high temperature annealing. Less change in EOT and leakage current is observed for $TaN_x$ gate electrode. It is also shown that the frequency dispersion and hysteresis of high frequency CV curves are improved significantly by a post-metallization anneal.

• 한국전기전자재료학회논문지
• /
• 제26권1호
• /
• pp.18-21
• /
• 2013

$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.