• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.575-576
• /
• 2006

It was analyzed qualitatively the light extraction in GaN-on-sapphire LEDs based on a simple model. The light extraction efficiency in the LEDs is simulated numerically by using ray tracing method. In the present study, the extraction efficiency was simulated on three different types of LEDs, which a have a different pattered sapphire substrate. And, the role of the patterned sapphire substrate are analyzed and discussed. Based on the analysis, the improvements of extraction efficiency in the LED structures were discussed and these analyses are helpful in the design of high brightness GaN LEDs.

• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.422-426
• /
• 2016

With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance ($R_s$) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance ($R_s$) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance ($R_s$) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance ($R_s$) based on the light I-V curves.

• Korean Journal of Environmental Agriculture
• /
• v.16 no.4
• /
• pp.333-340
• /
• 1997

An analytical method was developed to determine residues of haloxyfop-R and its methyl ester in soils and soybeans using gas-liquid chromatography (GLC) with electron capture detector (ECD). Soil or soybean sample was acidified and extracted with acetone. The extract was then subjected to ion-associated partition to individually separate haloxyfop-R and the neutral methyl ester. One phase containing haloxyfop-R was methylated with $BF_3$/methanol, partitioned to n-hexane and analyzed by GLC/ECD. The other phase containing the methyl ester was further purified by Florisil column chromatography prior to GLC determination. No cross contamination was found between two phases containing each of the acid and methyl ester, thus two compounds can be separately determined as the identical haloxyfop-R-methyl. Overall recoveries of haloxyfop-R from fortified samples averaged 88.2${\pm}$3.9% (n=12) and 88.3${\pm}$4.0% (n=6) for soils and soybeans respectively, and those of haloxyfop-R-methyl showed mean values of 89.2${\pm}$4.0% (n=12) and 85.6${\pm}$5.6% (n=6). Detection limits of both haloxyfop-R and its methyl esterwere 0.005㎎/㎏ and 0.01㎎/㎏ for soil and soybean samples respectively.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.5
• /
• pp.285-293
• /
• 2021

High-entropy TiAlCrSiN nano-composite coating was designed to improve mold life for high temperature liquid molding. Alloy design, powder fabrication and single alloying target fabrication for the high-entropy nano-composite coating were carried out. Using the single alloying target, an arc ion plating method was applied to prepare a TiAlCrSiN nano-composite coating had a 30 nm TiAlCrSiN layers are deposited layer by layer, and form about 4 ㎛-thickness of multi-layered coating. TiAlCrSiN nano-composite coating had a high hardness of about 39.9 GPa and a low coefficient of friction of less than about 0.47 in a dry environment. In addition, there was no change in the structure of the coating after the dissolution loss test in the molten metal at a temperature of about 1100 degrees.

• Journal of the Korean Geotechnical Society
• /
• v.15 no.3
• /
• pp.131-149
• /
• 1999

It was found that surface roughness has a first-order effect on the interface shear strength and accordingly it should be accurately quantified if its role is to be properly understood. To quantify the surface topography, first of all, a variety of commonly used surface roughness parameters and profiling methods were reviewed in this study. Based on this review, the normalized roughness parameter. $R_n$(Uesugi and Kishida, 1986), the profile roughness parameter, $R_L$, and the surface roughness parameter, $R_n$(Dove and Frost, 1996), were selected to be appropriate candidates of roughness parameters and the digital image analysis based Optical Profile Microscopy(OPM) method(Dove and Frost, 1996) to be an appropriate profiling method for this study. Using a smooth and three textured HDPE geomembranes which encompass the range of textures and texture patterns commonly used, a series of roughness measurements on virgin and previously used geomembranes were performed. The results showed that both $R_L\; and\; R_S$ values appropriately reflect the degree of texturing for the geomembranes used in this study, however, $R_n$ value showed limited ranges of variation which may not be sufficient to permit distinction between roughness values for certain conditions. The results of this study will be extended to the investigation of the influence of surface roughness on interface strength in future study.

• Journal of the Korean Society for Heat Treatment
• /
• v.13 no.6
• /
• pp.398-404
• /
• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• Nuclear Medicine and Molecular Imaging
• /
• v.43 no.4
• /
• pp.337-343
• /
• 2009

Purpose: ((R)-1-(2-chlorophenyl)-N-1-[$^{11}$C]methyl-N(1-propyl)-3-isoquinoline carboxamide ((R)-PK11195) is a specific ligand for the peripheral type benzodiazepine receptor and a marker of activated microglia, used to measure inflammation in neurologic disorders. We report here that a direct and simple radiosynthesis of [$^{11}$C](R)-PK11195 in mild condition using NaH suspension in DMF and one-step loop method. Materials and Methods: (R)-N-Desmethyl-PK11195 (1 mg) in DMSO (0.1 mL) and NaH suspension in DMF (0.1 mL) were injected into a semi-prep HPLC loop. [$^{11}$C]methyl iodide was passed through HPLC loop at room temperature. Purification was performed using semi-preparative HPLC. Aliquots eluted at 11.3 min were collected and analyzed by analytical HPLC and mass spectrometer. Results: The labeling efficiency of [$^{11}$C](R)-PK11195 was 71.8$\pm$8.5%. The specific activity was 11.8:$\pm$6.4 GBq/$\mu$mol and radiochemical purity was higher than 99.2%. The mass spectrum of the product eluted at 11.3 min showed m/z peaks at 353.1 (M+1), indicating the mass and structure of (R)-PK11195. Conclusion: By the one-step loop method with the [$^{11}$C]CH3l automated synthesis module, [$^{11}C$](R)-PK11195 could be easily prepared in high radiochemical yield using NaH suspension in DMF.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.1
• /
• pp.6-10
• /
• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.30 no.10C
• /
• pp.1007-1016
• /
• 2005

This paper presents a feature extraction method for shape based retrieval of 3D models. Since the feature descriptor of 3D model should be invariant to translation, rotation and scaling, it is necessary to preprocess the 3D models to represent them in a canonical coordinate system. We use the PCA(Principal Component Analysis) method to preprocess the 3D models. Also, we apply that to make a MBR(Minimum Boundary Rectangle) and a circumsphere. The proposed algorithm is as follows. We generate a circumsphere around 3D models, where radius equals 1(r=1) and locate each model in the center of the circumsphere. We produce the concentric spheres with a different radius($r_i=i/n,\;i=1,2,{\ldots},n$). After looking for meshes intersected with the concentric spheres, we compute the curvature of the meshes. We use these curvatures as the model descriptor. Experimental results numerically show the performance improvement of proposed algorithm from min. 0.1 to max. 0.6 in comparison with conventional methods by ANMRR, although our method uses .relatively small bins. This paper uses $R{^*}-tree$ as the indexing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.197-200
• /
• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and N$_2$ gas ambient annealing method at 950$^{\circ}C$ for 10 min. The specific contact resistivity($\rho$$\sub$c/), sheet resistance(R$\sub$S/), contact resistance(R$\sub$S/), transfer length(LT) were calculated from resistance(R$\sub$T/) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho$$\sub$c/=3.8x10$\^$-5/ Ω$\textrm{cm}^2$ , R$\sub$c/=4.9Ω, R$\sub$T/=9.8Ω and L$\sub$T/=15.5$\mu\textrm{m}$, resulting average values of another sample were $\rho$$\sub$c/=2.29x10$\^$-4/ Ω$\textrm{cm}^2$ , R$\sub$c/=12.9Ω, R$\sub$T/=25.8Ω. The Physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.