• 한국환경보건학회:학술대회논문집
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• 한국환경보건학회 2004년도 International Conference Global Environmental Problems and their Health Consequences
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• pp.169-172
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• 2004

A gas chromatography/mass spectrometric assay method was developed for the determination of propylene oxide adduct, N-(3-hydroxypropyl)valine. Adduct was released from hemoglobin by alkaline hydrolysis and extract at pH 8 with ethyl ether. The dried extract was completely derivatized with N-Methyl-N-(trimethylsilyl) trifluoroacetamide (MSTFA)/TMS-I (100:3). The detection limits of the assay were 0.08 ng/g for N-(3-hydroxypropyl)valine based upon assayed hemoglobin of 0.1 g. The method was applied to the determination of propylene oxide adduct formed in young female Sprague-Dawley rats after treatment for 1, 2 and 3 weeks with 0.008 % propylene oxide via the drinking water. An adduct was detected by proposed procedure. The structure of the adduct could be assigned to N-(3-hydroxypropyl)valine.

• 전자공학회논문지A
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• 제31A권6호
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• pp.117-127
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• 1994

In this paper, electrical and reliability properties of N$_2$O oxides, grown at the temperature of 95$0^{\circ}C$ and 100$0^{\circ}C$ to 74$\AA$, and 82$\AA$. respectively, using NS12TO gas in a conventional furnace, have been compared with those of pure oxide grown at the temperature of 850 to 84$\AA$ using O$_2$ gas. Initial IS1gT-VS1gT characteristics of N$_2$O oxides were similar to those of pure oxide, and reliability properties of N$_2$O oxides, such as charge trapping, interface state density and leakage current at low electric field under F-N stress, were improved much better than those of pure oxide. But, with increasing capacitor area. TDDB characteristics of N$_2$O oxides were more degraded than those of pure oxide and this degradation of TDDB characteristics was more severe in 100$0^{\circ}C$ N$_2$Ooxide than in 95$0^{\circ}C$ N$_2$O oxide. The improvement of reliability properties excluding TDDB in N$_2$Ooxides was attributed to the hardness of the interface improved by nitrogen pile-up at the interface of Si/SiO$_2$, but on the other hand, the degradation of TDDB characteristics in N$_2$O oxides was obsered due to the increase of local thinning spots caused by excessive nitrogen at interface during the growth of N$_2$O oxides.

• 청정기술
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• 제16권4호
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• pp.284-291
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• 2010

온실가스로 알려진 $N_2O$의 촉매 분해는 최소한 670 K 이상의 온도가 요구되는 난해한 공정으로 알려져 있다. 본 연구는 CO 환원제와 더불어 473 K의 저온에서도 $N_2O$를 전량 분해될 정도로 높은 활성을 나타내는 혼합금속산화물(mixed metal oxide: MMO) 촉매에 Ce을 첨가함으로서 나타나는 $N_2O$ 분해활성에의 영향을 검토하기 위하여 수행되었다. MMO 촉매는 Co 및 Al 외에 Rh과 Pd을 사용하고, 여기에 Ce을 미량 첨가하여 공침전법으로 제조하였으며, 결과적으로 Ce 함량이 증가함에 따라 촉매 표면적은 감소하고 $N_2O$의 직접분해 활성이 감소하는 현상이 나타났다. 그러나 CO 환원제의 분위기 하에서는 이러한 활성 감소를 상쇄하고도 남을 정도의 높은 $N_2O$ 분해활성을 나타냈으며 Ce 첨가비율에 따른 활성저하도 줄일 수 있어서 MMO 촉매의 물리적 안정성 증대를 위해 Ce을 첨가할 경우 CO 환원제에 의한 $N_2O$ 환원 반응계의 활성 안정성도 유지될 수 있는 것으로 확인되었다.

• 한국결정성장학회지
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• 제30권5호
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• pp.168-173
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• 2020

AlN의 열 산화 공정에서 발생하는 거동 및 메커니즘을 확인하기 위해 bulk AlN 단결정에 대해 대기분위기에서 온도에 따라 열처리를 수행하였다. 800℃의 온도에서 bulk AlN의 본격적인 산화 및 Al-oxide 들의 성장이 일어난 것을 확인하였고, 온도가 증가함에 따라 산소 성분의 wt%가 증가하는 반면 질소 성분의 wt%는 감소하는 경향을 보였다. 900℃에서 열처리하는 경우, 성장 된 Al-oxide은 이웃한 Al-oxide와 merging되어 α-Al₂O₃ 다결정을 형성하기 시작했다. 1000℃의 온도에서 열처리하는 동안, 육각 피라미드 형 α-Al₂O₃ 다결정이 명확히 형성되었음을 확인하였다. X-선 회절 패턴 분석을 통해 bulk AlN의 온도에 따른 표면 결정 구조의 변화를 자세히 조사하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권4호
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• pp.449-457
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• 2012

The program/erase (P/E) cyclic endurances including bias temperature instability (BTI) behaviors of Metal-$Al_2O_3$-Nitride-Oxide-Semiconductor (MANOS) memories are investigated in comparison with those of Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories. In terms of BTI behaviors, the SONOS power-law exponent n is ~0.3 independent of the P/E cycle and the temperature in the case of programmed cell, and 0.36~0.66 sensitive to the temperature in case of erased cell. Physical mechanisms are observed with thermally activated $h^*$ diffusion-induced Si/$SiO_2$ interface trap ($N_{IT}$) curing and Poole-Frenkel emission of holes trapped in border trap in the bottom oxide ($N_{OT}$). In terms of the BTI behavior in MANOS memory cells, the power-law exponent is n=0.4~0.9 in the programmed cell and n=0.65~1.2 in the erased cell, which means that the power law is strong function of the number of P/E cycles, not of the temperature. Related mechanism is can be explained by the competition between the cycle-induced degradation of P/E efficiency and the temperature-controlled $h^*$ diffusion followed by $N_{IT}$ passivation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• 한국미생물·생명공학회지
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• 제47권4호
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• pp.630-638
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• 2019

아산화질소는 이산화탄소보다 약 310배 높은 지구온난화 지수를 갖는 주요 온실가스이다. 본 연구에서는 아산화질소 배출저감을 위해 고도처리슬러지를 접종원으로 이용하여 아산화질소 환원 컨소시움을 확보하였다. 이 컨소시움의 우점종은 Sulfurovum (17.95%), Geobacter (14.63%), Rectinema(11.45%)와 Chlorobium (8.24%)이었다. 아산화질소 환원 컨소시움의 활성에 미치는 C/N 비(mol·mol-1), 탄소원의 영향을 조사한 결과, C/N 비 6.3 및 아세트산을 탄소원으로 공급한 조건에서 최대 아산화질소 환원 활성을 나타냈다. 또한, 본 컨소시움의 3,000 ppm 이하의 아산화질소 농도 범위에서 아산화질소 농도가 증가할수록 환원속도도 증가하였다. 속도론적 해석 결과, 아산화질소 환원 컨소시움의 최대 아산화질소 환원 속도는 163.9 ㎍-N·g VSS^-1·h^-1이었다. 본 Consortium은 아산화질소를 N2로 환원하는데 관여를 nosZ 뿐만 아니라, 질산염을 아질산염으로 환원하는 narG, 아질산염을 일산화질소로 환원하는 nirK 유전자 및 일산화질소를 아산화질소를 환원하는 norB 유전자를 모두 보유하고 있었다. 이는 본 컨소시움은 아산화질소 제거 공정 뿐 만 아니라, 탈질공정에도 활용 가능한 유용한 미생물 자원임을 의미한다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• 한국자동차공학회논문집
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• 제2권5호
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• pp.121-134
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• 1994

Shock tube investigation of ethylene oxide-$0_{2}-N_{2}$ mixture have been performed to reveal detonation characteristics of the mixture in terms of detonation pressure and speed. Theoretical calculation of thermodynamic parameters at the Chapmann-Jouguet detonation of the mixture has been also performed. A comparision of the observed results with the calculated ones can lead us to predict the detonation parameters of ethylene oxide in an artificial air. In addition, we have observed ignition delay times of ethylene oxide mixtures. The best fit of the observed delay times to Arrhenius gas kinetic relation gives : ${\tau}=10^{-144}{e{xp}}(E_a/RT)[C_{2}H_{4}O]^{-4.8}[O_{2}]^{-12.4}[N_{2}]^{-14.1}$ $E_a=3.67kcal/mole$ The observed activation energy is markedly reduced, compared with the case of ethylene oxide diluted in Ar. It could be due to the factor that $N_2$ play a role as detonation promoter yielding very reactive NOx radicals.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.