• The Journal of Advanced Prosthodontics
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• v.11 no.4
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• pp.223-231
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• 2019

PURPOSE. The purpose of this study was to evaluate the shear bond strength (SBS) of an indirect resin composite (IRC) to the various resin matrix ceramic (RMC) blocks using different surface treatments. MATERIALS AND METHODS. Ninety-nine cubic RMC specimens consisting of a resin nanoceramic (RNC), a polymer-infiltrated hybrid ceramic (PIHC), and a flexible hybrid ceramic (FHC) were divided randomly into three surface treatment subgroups (n = 11). In the experimental groups, untreated (Cnt), tribochemical silica coating (Tbc), and Neodymium-Doped Yttrium Aluminum Garnet (Nd:YAG) laser irradiation (Lsr) with 3 W (150 mJ/pulse, 20 Hz for 20 sec.) were used as surface treatments. An indirect composite resin (IRC) was layered with a disc-shape mold ($2{\times}3mm$) onto the treated-ceramic surfaces and the specimens submitted to thermal cycling (6000 cycles, $5-55^{\circ}C$). The SBS test of specimens was performed using a universal testing machine and the specimens were examined with a scanning electron microscope to determine the failure mode. Data were statistically analyzed with two-way analysis of variance (ANOVA) and Tukey HSD test (${\alpha}=.05$). RESULTS. According to the two-way ANOVA, only the surface treatment parameter was statistically significant (P<.05) on the SBS of IRC to RMC. The SBS values of Lsr-applied RMC groups were significantly higher than Cnt groups for each RMC material, (P<.05). Significant differences were also determined between Tbc surface treatment applied and untreated (Cnt) PIHC materials (P=.039). CONCLUSION. For promoting a reliable bond strength during characterization of RMC with IRC, Nd:YAG laser or Tbc surface treatment technique should be used, putting in consideration the microstructure and composition of RMC materials and appropriate parameters for each material.

• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.248-252
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• 1992

$ZrO_2-dopedYb_2O_3solid$ solutions containing 1, 3, 5, 7 and 9 mol% $ZrO_2were$ synthesized from spectroscopically pure $Yb_2O_3$ and $ZrO_2$ powders and found to be rare earth C-type structure by XRD technique. Electrical conductivities were measured as a function of temperatures from 700 to $1050^{\circ}C$ and oxygen partial pressures from 1${\times}$$10^-5$ to 2${\times}$ $10^-1$atm. The electrical conductivities depend simply on temperature and the activation energies are determined to be 1.56-1.68 $_eV$. The oxygen partial pressure dependence of the electrical conductivity shows that the conductivity increases with increasing oxygen partial pressure, indicating p-type semiconductor. The $PO_2$ dependence of the system is nearly power of 1/4. It is suggested from the linearity of the temperature dependence of electrical conductivity and only one value of 1/n that the solid solutions of the system have single conduction mechanism. From these results, it is concluded that the main defects of the system are negatively doubly charged oxygen interstitial in low. $ZrO_2doping$ level and negatively triply charged cation vacancy in high doping level and the electrical conduction is due to the electronic hole formed by the defect structure.

• Journal of Periodontal and Implant Science
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• v.52 no.1
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• pp.77-87
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• 2022

Purpose: This pilot study assessed the immediate in vivo effect of high peak pulse power neodymium-doped yttrium aluminum garnet (Nd:YAG) laser monotherapy on selected red/orange complex periodontal pathogens in deep human periodontal pockets. Methods: Twelve adults with severe periodontitis were treated with the Laser-Assisted New Attachment Procedure (LANAP®) surgical protocol, wherein a free-running, digitally pulsed, Nd:YAG dental laser was used as the initial therapeutic step before mechanical root debridement. Using a flexible optical fiber in a handpiece, Nd:YAG laser energy, at a density of 196 J/cm² and a high peak pulse power of 1,333 W/pulse, was directed parallel to untreated tooth root surfaces in sequential coronal-apical passes to clinical periodontal probing depths, for a total applied energy dose of approximately 8-12 joules per millimeter of periodontal probing depth at each periodontal site. Subgingival biofilm specimens were collected from each patient before and immediately after Nd:YAG laser monotherapy from periodontal pockets exhibiting ≥6 mm probing depths and bleeding on probing. Selected red/orange complex periodontal pathogens (Porphyromonas gingivalis, Tannerella forsythia, Prevotella intermedia/nigrescens, Fusobacterium nucleatum, Parvimonas micra, and Campylobacter species) were quantified in the subgingival samples using established anaerobic culture techniques. Results: All immediate post-treatment subgingival biofilm specimens continued to yield microbial growth after Nd:YAG laser monotherapy. The mean levels of total cultivable red/orange complex periodontal pathogens per patient significantly decreased from 12.0% pretreatment to 4.9% (a 59.2% decrease) immediately after Nd:YAG laser monotherapy, with 3 (25%) patients rendered culture-negative for all evaluated red/orange complex periodontal pathogens. Conclusions: High peak pulse power Nd:YAG laser monotherapy, used as the initial step in the LANAP® surgical protocol on mature subgingival biofilms, immediately induced significant reductions of nearly 60% in the mean total cultivable red/orange complex periodontal pathogen proportions per patient prior to mechanical root instrumentation and the rest of the LANAP® surgical protocol.

• Korean Journal of Materials Research
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• v.34 no.9
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• pp.448-455
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• 2024

We conducted a study on excessive doping of the Cr and In elements in Bi-Sb-Te materials satisfying the Hume-Rothery rule, and investigated the resulting electrical and thermal properties. From X-ray diffraction (XRD) results, we confirmed the formation of a single phase even with excessive doping. Through analysis of electrical properties, we observed the highest enhancement in electrical characteristics at y = 0.2, suggesting that the appropriate ratio of Bi-Sb significantly influences this enhancement. Using the Callaway-von Baeyer (CvB) model to assess scattering due to point defects, we calculated the experimental point defect scattering factor (Γ_CvB.exp), which was notably high due to the substantial differences in volume and atomic weight between the substituted (Cr, In) and original (Bi, Sb) elements. Additionally, we conducted a single parabolic band (SPB) modeling analysis of materials with compositions y = 0.1 and 0.2, where, despite a decrease in density-of-states effective mass (m_d^*) during the enhancement process from y = 0.1 to 0.2, a sharp increase in non-degenerate mobility (μ₀) led to an 88 % increase in weighted mobility (μ_w). Furthermore, analyzing zT with respect to n_H revealed a 51 % increase in zT at a composition of y = 0.2. This study confirmed a significant reduction in lattice thermal conductivity with the co-doping strategy, and with further compositional studies to improve electrical properties, we anticipate achieving high zT.

• Nuclear Engineering and Technology
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• v.56 no.8
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• pp.3378-3384
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• 2024

Investigations were conducted on the addition of barium's impact on the radiation shielding and physical attributes of five different glasses, designated S1-S5, with varying BaO contents. Using two point sources namely Co⁶⁰ and Cs¹³⁷ along with a scintillation detector [NaI(TL)], experimental measurements were made of the shielding parameters of γ-rays, namely the effective atomic number (Z_eff), electron density (N_el), half-value layer (HVL), linear attenuation coefficient (μ), mass attenuation coefficient (μ_m), mean free path (λ), and radiation protection effectiveness at the energies of 0.664, 1.177, and 1.334 MeV, and comparisons made with recently considered glasses as well as frequently employed materials for γ-ray shielding. The results show that the examined glasses' physical and radiation shielding qualities are improved by the addition of BaO. The μ values increased from 0.245 to 0.275 cm^-1 (0.662 MeV), from 0.174 to 0.198 cm^-1 (1.173 MeV), and from 0.161 to 0.189 (1.332 MeV). The observed values of HVL decreased from 2.83, 3.98, and 4.3 cm to 2.5, 3.5, and 3.62 cm at 0.662, 1.173, and 1.332 MeV, respectively, for the samples S1 and S5. In addition, the S5 glass sample was determined to have the best protection against photon among all the samples that were evaluated, as well as against recently considered glasses and those materials often utilized for gamma-ray shielding purposes.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.709-714
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• 2004

The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt％ B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt％ of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt％ of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50％ and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt％ B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5％ regardless of the amount of B$_2$O$_3$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.109-116
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• 2024

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1^o, 3^o, 4^o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.7
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• pp.4835-4841
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• 2015

The effect of particle size and compaction pressure on the thermoelectric properties of n-type $FeSi_2$ was investigated. The starting powders with various particle size were pressed into a compact (compaction pressure; $70{\sim}220kg/cm^2$). The compact specimens were sintered at 1473 K for 7 h and annealed at 1103 K for 100 h under Ar atmosphere to transform to the semiconducting ${\beta}$-phase. The microstructure and phases of the specimens were observed by SEM, XRD and EDS. The electrical conductivity and Seebeck coefficient were measured simultaneously for the same specimen at r.t.~1023 K in Ar atmosphere. The electrical conductivity increased with decreasing particle size and hence the increases of relative density of the sintered body and the amount of residual metallic phase ${\varepsilon}$-FeSi due to a increase of the electrical conductivity. The Seebeck coefficient exhibited the maximum value at about 700~800 K and decreased with decreasing particle size. This must be due to a increase of residual metallic phase ${\varepsilon}$-FeSi. On the other hand, the change of compaction pressure appeared to have little effect on the thermoelectric properties. Consequently, the power factor would be affected more by particle size than compaction pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.563-567
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• 2011

The most widely used piezoelectric ceramics are lead oxide based ferroelectrics (PZT). However, the toxicity of lead oxide and its high vapor pressure during processing have led to a demand for alternative lead-free piezoelectric materials. We synthesized Lead-free piezoelectric ceramics of $0.96(K_{0.5}Na_{0.5})NbO_3-0.04SrZrO_3+x$ mol% $ZrO_2$ [KNN-SZ+$xZrO_2$; x= 0~0.10] doped with 0.1 wt% $MnO_2$ by a conventional solid state method. We investigated the piezoelectric properties and microstructures of these disk samples sintered in reduced atmosphere in order to evaluate the possibility of the multilayered piezoelectric ceramics having the base metal such as Ni as a internal electrode. All of these KNN-SZ samples sintered in 3%$H_2-97%N_2$ atmosphere at $1,140^{\circ}C$ exhibit pure perovskite structure irrespective of the content of $ZrO_2$. Meanwhile, the sintering denisty and piezoelectric properties such as $K_p$, $Q_m$ and $d_{33}$ of KNN-SZ samples as a function of $ZrO_2$ content show the maxima ($k_p$=28.07%, $Q_m$= 101.34, $d_{33}$= 156 pC/N) at x= 0.04 and it is likely that there is some morphotropic phase boundary(MPB) in this KNN-SZ+$xZrO_2$ composition system. These results indicate that the ceramic composition is a promising candidate material for applications in lead free multilayer piezoelectric ceramics.