• Annals of Surgical Treatment and Research
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• 제95권5호
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• pp.267-277
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• 2018

Purpose: The aim of this study was to analyze survival outcomes in 1,000 consecutive liver transplantations (LTs) performed at a single institution from 1993 to April 2017. Methods: The study population was divided into 2 groups based on donor type: deceased donor LT (DDLT; n = 181, 18.1%) and living donor LT (LDLT; n = 819; 81.9%), and into 3 periods based on the number of cases (first 300 cases, middle 300 cases, last 400 cases). Results: Infection was the most common cause of death, accounting for 34.8% (95 of 273). Mortality due to hepatocellular carcinoma recurrence occurred most frequently between 1 and 5 years after transplantation. Mortality rate by graft rejection was highest between 5 and 10 years after transplantation. And mortality by de novo malignancy occurred most frequently after 10 years after transplantation. The patient survival rates for the entire population at 5 and 10 years were 74.7%, and 68.6%, respectively. There was no difference in survival rate between the LDLT and DDLT groups (P = 0.188). Cause of disease, disease severity, case period, and retransplantation had a significant association with patient survival (P = 0.002, P = 0.031, P = 0.003, and P = 0.024, respectively). Conclusion: Surgical techniques and perioperative management for transplant patients have improved and undergone standardization. Controlling perioperative infection and managing patients with HCC as LT candidates will result in better outcomes.

• Bulletin of the Korean Chemical Society
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• 제30권11호
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• pp.2762-2764
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• 2009

• Bulletin of the Korean Chemical Society
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• 제4권4호
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• pp.189-191
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• 1983

• Bulletin of the Korean Chemical Society
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• 제12권3호
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• pp.241-243
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• 1991

• Corrosion Science and Technology
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• 제2권5호
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• pp.212-218
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• 2003

Electronic properties of passive films formed on Ti at film formation potentials $(E_f)V_{SCE}$ in pH 8.5 buffer solution and in an artificial seawater were examined through the photocurrent measurement and Mott-Schottky analysis. The passive films formed on Ti in pH 8.5 buffer solution exhibited a n-type semiconductor with a band gap energys $(E_g);E_g^{n=2}=3.4$ eV for nondirect electron transition, and $E_g^{n=0.5}=3.7$ eV for direct electron transition. These band gap values were almost same as those for the passive films formed in artificial seawater, indicating that chloride ion ($Cl^-$ in solution did not affect the electronic structure of the passive film on Ti. $E_g$ for passive films formed on Ti were found to be greater than those ($E_g^{n=0.5}=3.1$ eV, $E_g^{n=2}=3.4$) for a thermal oxide film formed on Ti in air at $400^{\circ}C$. The disorder energy of passive film, determined from the absorption tail of photocurrent spectrum, was much greater than that for the thermal oxide film farmed on Ti in air at $400^{\circ}C$. The greater $E_g$ and the higher disorder energy for the passive film compared with those for the thermal oxide fIlm suggest that the passive film on Ti exhibited more disorded structure than the thermal oxide film. The donor density (about $2.4{\times}10^{20}cm^{-3}$) for the passive film formed in artificial seawater was greater than that (about $20{\times}10^{20}cm^{-3}$) formed in pH 8.5 buffer solution, indicating that $Cl^-$ increased the donor density for the passive film on Ti.

• 대한화학회지
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• 제52권4호
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• pp.439-444
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• 2008

• Bulletin of the Korean Chemical Society
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• 제16권1호
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• pp.26-29
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• 1995

Six-coordinate molybdenum(Ⅴ)-oxo complexes (PyH)[MoOCl2L] and (R4N)-[MoOCl2L] (R=CH3 and C2H5) with N-salicylidene-2-aminophenol(L1) and its derivatives(L2=5-CH3, L3=3-CH3O, L4=5,6-C4H4 and L5=5-NO2) as ONO-donor ligands have been synthesized and the spectral and electrochemical properties of the complexes by elemental analysis, molar conductivity, UV-vis, IR, 1H NMR and CV have been studied.

• Bulletin of the Korean Chemical Society
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• 제19권6호
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• pp.628-634
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• 1998

The properties of the n-type impurities nitrogen and phosphorus in diamond have been investigated by means of electronic band structure calculations within the framework of the semiempirical extended Huckel tight-binding method. For diamond with the nitrogen and phosphorus substitutional impurities, calculated density of states shows the impurity level deep in the band gap. This property can be derived from the substantial <111> relaxation of the impurity and nearest-neighbor carbon atoms, which is associated with the population of an antibonding orbital between them. The passivated donor property of the P-vacancy complex which lies deep in the gap is also discussed.

• Bulletin of the Korean Chemical Society
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• 제12권3호
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• pp.271-273
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• 1991

Poly (N-vinylcarbazole) was obtained spontaneously by 1,1,2,2-tetracyanocyclopropylstyrene(1) in polar solvents such as dichloromethane and acetonitrile at room temperature. The polymerization reactions were faster in more polar solvent and were not proceeded in less polar solvents such as chloroform and diethyl ether. The formation of poly (N-vinylcarbazole) was explained by bond-forming initiation theory, in which the initiating species are zwitterionic tetramethylene intermediates.

• 한국자기공명학회논문지
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• 제12권2호
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• pp.74-80
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• 2008

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing electron magnetic resonance(EMR), Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of $2{\times}10^{17}$ neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, $A_1$(TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much broader or was much more broadened than that for the unirradiated one. The observed EMR center with the g value of 1.952 in a neutron irradiated Si-doped GaN may be assigned to a Si-related complex donor.