• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.714-716
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• 2002

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.135-138
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• 2006

OLEDs are attractive because of possible application in display with low operating voltage, low power consumption, self-emission and capability of multicolor emission by the selection of emissive material. We investigated the effects of deposition rate on the electrical characteristics, physical characteristics and optical characteristics of OLEDs in the ITO(indium-tin-oxide)/N,N'-diphenyl-N,N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/Al device. We measured current density, luminous flux and luminance characteristics of devices with varying deposition rates of TPD and $Alq_3$. It has been found that optimal deposition rate of TPD and $Alq_3$ were respectively $1.5{\AA}/s$ from the device structure. An AFM measurement results, surface roughness of the deposited film was the lowest when deposition rate was $1.5{\AA}/s$.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.5-5
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• 2002

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.5
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• pp.675-686
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• 2007

Statement of problem: Titanium nitride(TiN) coatings are the most general and popular coating method and used to improve the properties of metallic surface for industrial purposes. When TiN coating applied to the abutment screw, frictional resistance would be reduced, as a results, the greater preload and prevention of the screw loosening could be expected. Purpose: The purpose of this study was to investigate mechanical properties of TiN coated film of various coating thickness on the titanium alloy surface and to evaluate proper coating thickness. Material and method: 95 Titanium alloy (Ti-6Al-4V) discs of 15 mm in diameter and 3 mm in thickness were prepared for TiN coating and divided into 7 groups in this study. Acceding to coating deposition time (CDT) with TiN by using Arc ion plating, were divided into 7 groups : Group A (CDT 30min), Group B (CDT 60min), Group C (CDT 90min), Group D (CDT 120min), Group E (CDT 150min), Group F(CDT 180min) and Group G (no CDT) as a control group. TiN coating surface was observed with Atomic Force Microscope(AFM), field emission scanning electron microscopy(FE-SEM) and examined with scratch tester, wear tester. Result: 1. Coating thickness fir each coated group was increased in proportion to coating deposition time. 2. Surface of all coated groups except Group A was homogeneous and smooth. However, surface of none coated Group G had scratch. 3. Adhesion strength for each coated group was increased in proportion to coating deposition time. 4. Wear resistance for each coated group was increased in proportion to coating deposition time. 5. Surface roughness in Group A, B, C was increased in proportion to coating deposition time. But, surface roughness in Group D, E, F was showed decreased tendency in proportion to coating deposition time. Conclusion: According to coating deposition time, mechanical properties of TiN coated film were changed. It was considered that 120 minutes coating deposition time ($1.32{\mu}m$ in coating thickness) is necessary.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.659-662
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• 2007

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.1-3
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• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1577-1579
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• 2003

AlN thin films are prepared on Si (111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain AlN thin films with high c-axis (002)-TC value and low surface roughnesses. For all the deposited AlN films, the c-axis (002)-orientation, surface mophology, and roughness are characterized in terms of deposition conditions FEAR devices with Al/AlN/Mo/Si(111) configuration are also fabricated. From the frequency response characteristics, the return loss and electromechanical coupling contant($k_t{^2}$) are estimated.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.2
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• pp.27-37
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• 1991

The adhesion strength of TiN films to substrate(STC 3) steel has been studied using the scratch adhesion test. Before deposition, the substrates were mechanically polished and TiN films were deposited at different substrate temperature($480^{\circ}C-540^{\circ}C$). The chemical properties of TiN films were investigated by RBS, and EDS, and the physical properties were investigated by micro-hardness tester, SEM, and X-ray diffractometer. According to results of this study, the adhesion strength of TiN films increase with increasing the deposition temperature. The roughness of the polished substrates surface were measured with a profilometer. It was observed that, as a general rule, the adhesion strength of deposited TiN films increase with decreasing the substrates surface roughness.